| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN61D8L-7MOSFET N-CH 60V 470MA SOT23 Diodes Incorporated |
232,760 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 470mA (Ta) | 3V, 5V | 1.8Ohm @ 150mA, 5V | 2V @ 1mA | 0.74 nC @ 5 V | ±12V | 12.9 pF @ 12 V | - | 390mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2N6661-2MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
2,866 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
DMG3415UFY4Q-7MOSFET P-CH 16V 2.5A X2-DFN2015 Diodes Incorporated |
100,664 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 16 V | 2.5A (Ta) | 1.8V, 4.5V | 39mOhm @ 4A, 4.5V | 1V @ 250µA | 10 nC @ 4.5 V | ±8V | 282 pF @ 10 V | - | 650mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2N6661-E3MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
2,511 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BUK6D56-60EXMOSFET N-CH 60V 4A/11A 6DFN Nexperia USA Inc. |
17,435 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4A (Ta), 11A (Tc) | 4.5V, 10V | 56mOhm @ 4A, 10V | 2.7V @ 250µA | 12 nC @ 10 V | ±20V | 435 pF @ 30 V | - | 2W (Ta), 15W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
2N6661JAN02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
3,958 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
DMP3056LDM-7MOSFET P-CH 30V 4.3A SOT-26 Diodes Incorporated |
166,222 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.3A (Ta) | 4.5V, 10V | 45mOhm @ 5A, 10V | 2.1V @ 250µA | 21.1 nC @ 10 V | ±20V | 948 pF @ 25 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2N6661JTVP02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
2,255 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
DMP6350S-7MOSFET P-CH 60V 1.5A SOT23 Diodes Incorporated |
88,345 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.5A (Ta) | 4.5V, 10V | 350mOhm @ 900mA, 10V | 3V @ 250µA | 4.1 nC @ 10 V | ±20V | 206 pF @ 30 V | - | 720mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2N6661JTX02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
3,402 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BSS87,115MOSFET N-CH 200V 400MA SOT89 Nexperia USA Inc. |
136,388 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 400mA (Ta) | 10V | 3Ohm @ 400mA, 10V | 2.8V @ 1mA | - | ±20V | 120 pF @ 25 V | - | 580mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2N6661JTXL02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
2,247 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRLML0040TRPBFMOSFET N-CH 40V 3.6A SOT23 Infineon Technologies |
78,630 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 3.6A (Ta) | 4.5V, 10V | 56mOhm @ 3.6A, 10V | 2.5V @ 25µA | 3.9 nC @ 4.5 V | ±16V | 266 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2N6661JTXP02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
3,026 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SSM3J130TU,LFMOSFET P-CH 20V 4.4A UFM Toshiba Semiconductor and Storage |
262,227 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.5V, 4.5V | 25.8mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | ±8V | 1800 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
2N6661JTXV02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
2,389 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SSM3K2615R,LFMOSFET N-CH 60V 2A SOT23F Toshiba Semiconductor and Storage |
52,353 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | π-MOSV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 3.3V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | - | ±20V | 150 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
|
3N163MOSFET P-CH 40V 50MA TO72 Vishay Siliconix |
2,870 | - |
RFQ |
Технические |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
SI2301-TPMOSFET P-CH 20V 2.8A SOT-23 Micro Commercial Co |
49,093 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.8A (Ta) | 2.5V, 4.5V | 120mOhm @ 2.8A, 4.5V | 1V @ 250µA | 14.5 nC @ 4.5 V | ±8V | 880 pF @ 6 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
3N163-2MOSFET P-CH 40V 50MA TO72 Vishay Siliconix |
3,181 | - |
RFQ |
Технические |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |