Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMN61D8L-7

DMN61D8L-7

MOSFET N-CH 60V 470MA SOT23

Diodes Incorporated
232,760 -

RFQ

DMN61D8L-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 470mA (Ta) 3V, 5V 1.8Ohm @ 150mA, 5V 2V @ 1mA 0.74 nC @ 5 V ±12V 12.9 pF @ 12 V - 390mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N6661-2

2N6661-2

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix
2,866 -

RFQ

2N6661-2

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMG3415UFY4Q-7

DMG3415UFY4Q-7

MOSFET P-CH 16V 2.5A X2-DFN2015

Diodes Incorporated
100,664 -

RFQ

DMG3415UFY4Q-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 16 V 2.5A (Ta) 1.8V, 4.5V 39mOhm @ 4A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±8V 282 pF @ 10 V - 650mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N6661-E3

2N6661-E3

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix
2,511 -

RFQ

2N6661-E3

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK6D56-60EX

BUK6D56-60EX

MOSFET N-CH 60V 4A/11A 6DFN

Nexperia USA Inc.
17,435 -

RFQ

BUK6D56-60EX

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Ta), 11A (Tc) 4.5V, 10V 56mOhm @ 4A, 10V 2.7V @ 250µA 12 nC @ 10 V ±20V 435 pF @ 30 V - 2W (Ta), 15W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N6661JAN02

2N6661JAN02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix
3,958 -

RFQ

2N6661JAN02

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMP3056LDM-7

DMP3056LDM-7

MOSFET P-CH 30V 4.3A SOT-26

Diodes Incorporated
166,222 -

RFQ

DMP3056LDM-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 4.5V, 10V 45mOhm @ 5A, 10V 2.1V @ 250µA 21.1 nC @ 10 V ±20V 948 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N6661JTVP02

2N6661JTVP02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix
2,255 -

RFQ

2N6661JTVP02

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMP6350S-7

DMP6350S-7

MOSFET P-CH 60V 1.5A SOT23

Diodes Incorporated
88,345 -

RFQ

DMP6350S-7

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 60 V 1.5A (Ta) 4.5V, 10V 350mOhm @ 900mA, 10V 3V @ 250µA 4.1 nC @ 10 V ±20V 206 pF @ 30 V - 720mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N6661JTX02

2N6661JTX02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix
3,402 -

RFQ

2N6661JTX02

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS87,115

BSS87,115

MOSFET N-CH 200V 400MA SOT89

Nexperia USA Inc.
136,388 -

RFQ

BSS87,115

Технические

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 400mA (Ta) 10V 3Ohm @ 400mA, 10V 2.8V @ 1mA - ±20V 120 pF @ 25 V - 580mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N6661JTXL02

2N6661JTXL02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix
2,247 -

RFQ

2N6661JTXL02

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLML0040TRPBF

IRLML0040TRPBF

MOSFET N-CH 40V 3.6A SOT23

Infineon Technologies
78,630 -

RFQ

IRLML0040TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 3.6A (Ta) 4.5V, 10V 56mOhm @ 3.6A, 10V 2.5V @ 25µA 3.9 nC @ 4.5 V ±16V 266 pF @ 25 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N6661JTXP02

2N6661JTXP02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix
3,026 -

RFQ

2N6661JTXP02

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSM3J130TU,LF

SSM3J130TU,LF

MOSFET P-CH 20V 4.4A UFM

Toshiba Semiconductor and Storage
262,227 -

RFQ

SSM3J130TU,LF

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.5V, 4.5V 25.8mOhm @ 4A, 4.5V 1V @ 1mA 24.8 nC @ 4.5 V ±8V 1800 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
2N6661JTXV02

2N6661JTXV02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix
2,389 -

RFQ

2N6661JTXV02

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSM3K2615R,LF

SSM3K2615R,LF

MOSFET N-CH 60V 2A SOT23F

Toshiba Semiconductor and Storage
52,353 -

RFQ

SSM3K2615R,LF

Технические

Tape & Reel (TR),Cut Tape (CT) π-MOSV Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 3.3V, 10V 300mOhm @ 1A, 10V 2V @ 1mA - ±20V 150 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
3N163

3N163

MOSFET P-CH 40V 50MA TO72

Vishay Siliconix
2,870 -

RFQ

3N163

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 40 V 50mA (Ta) 20V 250Ohm @ 100µA, 20V 5V @ 10µA - ±30V 3.5 pF @ 15 V - 375mW (Ta) -55°C ~ 150°C (TJ) Through Hole
SI2301-TP

SI2301-TP

MOSFET P-CH 20V 2.8A SOT-23

Micro Commercial Co
49,093 -

RFQ

SI2301-TP

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 2.5V, 4.5V 120mOhm @ 2.8A, 4.5V 1V @ 250µA 14.5 nC @ 4.5 V ±8V 880 pF @ 6 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
3N163-2

3N163-2

MOSFET P-CH 40V 50MA TO72

Vishay Siliconix
3,181 -

RFQ

3N163-2

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 40 V 50mA (Ta) 20V 250Ohm @ 100µA, 20V 5V @ 10µA - ±30V 3.5 pF @ 15 V - 375mW (Ta) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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