Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMP3028LFDE-7

DMP3028LFDE-7

MOSFET P-CH 30V 6.8A 6UDFN

Diodes Incorporated
158,602 -

RFQ

DMP3028LFDE-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 6.8A (Ta) 4.5V, 10V 32mOhm @ 7A, 10V 2.4V @ 250µA 22 nC @ 10 V ±20V 1241 pF @ 15 V - 660mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
3N163-E3

3N163-E3

MOSFET P-CH 40V 50MA TO72

Vishay Siliconix
3,293 -

RFQ

3N163-E3

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 40 V 50mA (Ta) 20V 250Ohm @ 100µA, 20V 5V @ 10µA - ±30V 3.5 pF @ 15 V - 375mW (Ta) -55°C ~ 150°C (TJ) Through Hole
3N164

3N164

MOSFET P-CH 30V 50MA TO72

Vishay Siliconix
2,925 -

RFQ

3N164

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50mA (Ta) 20V 300Ohm @ 100µA, 20V 5V @ 10µA - ±30V 3.5 pF @ 15 V - 375mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZXMN3F30FHTA

ZXMN3F30FHTA

MOSFET N-CH 30V 3.8A SOT23-3

Diodes Incorporated
14,130 -

RFQ

ZXMN3F30FHTA

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3.8A (Ta) 4.5V, 10V 47mOhm @ 3.2A, 10V 3V @ 250µA 7.7 nC @ 10 V ±20V 318 pF @ 15 V - 950mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFD113

IRFD113

MOSFET N-CH 60V 800MA 4DIP

Vishay Siliconix
2,746 -

RFQ

IRFD113

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 200 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD213

IRFD213

MOSFET N-CH 250V 450MA 4DIP

Vishay Siliconix
2,953 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) - 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V - 140 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
NTGS4111PT1G

NTGS4111PT1G

MOSFET P-CH 30V 2.6A 6TSOP

onsemi
35,002 -

RFQ

NTGS4111PT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 4.5V, 10V 60mOhm @ 3.7A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 750 pF @ 15 V - 630mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFD9123

IRFD9123

MOSFET P-CH 100V 1A 4DIP

Vishay Siliconix
2,529 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) - 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V - 390 pF @ 25 V - - - Through Hole
DMG3414U-7

DMG3414U-7

MOSFET N-CH 20V 4.2A SOT23-3

Diodes Incorporated
283,173 -

RFQ

DMG3414U-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.8V, 4.5V 25mOhm @ 8.2A, 4.5V 900mV @ 250µA 9.6 nC @ 4.5 V ±8V 829.9 pF @ 10 V - 780mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXM61N03FTA

ZXM61N03FTA

MOSFET N-CH 30V 1.4A SOT23-3

Diodes Incorporated
142,179 -

RFQ

ZXM61N03FTA

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4.5V, 10V 220mOhm @ 910mA, 10V 1V @ 250µA 4.1 nC @ 10 V ±20V 150 pF @ 25 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML0060TRPBF

IRLML0060TRPBF

MOSFET N-CH 60V 2.7A SOT23

Infineon Technologies
2,188 -

RFQ

IRLML0060TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Ta) 4.5V, 10V 92mOhm @ 2.7A, 10V 2.5V @ 25µA 2.5 nC @ 4.5 V ±16V 290 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS169H6327XTSA1

BSS169H6327XTSA1

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies
92,729 -

RFQ

BSS169H6327XTSA1

Технические

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 0V, 10V 6Ohm @ 170mA, 10V 1.8V @ 50µA 2.8 nC @ 7 V ±20V 68 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2323CX RFG

TSM2323CX RFG

MOSFET P-CHANNEL 20V 4.7A SOT23

Taiwan Semiconductor Corporation
102,885 -

RFQ

TSM2323CX RFG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 1.8V, 4.5V 39mOhm @ 4.7A, 4.5V 1V @ 250µA 12.5 nC @ 4.5 V ±8V 1020 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AON6558

AON6558

MOSFET N-CH 30V 25A/28A 8DFN

Alpha & Omega Semiconductor Inc.
188,576 -

RFQ

AON6558

Технические

Tape & Reel (TR),Cut Tape (CT) AlphaMOS Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 28A (Tc) 4.5V, 10V 5.1mOhm @ 20A, 10V 2.2V @ 250µA 25 nC @ 10 V ±20V 1128 pF @ 15 V - 5W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL31N65M5

STL31N65M5

MOSFET N-CH 650V 15A PWRFLAT88

STMicroelectronics
3,404 -

RFQ

STL31N65M5

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 2.8A (Ta), 15A (Tc) 10V 162mOhm @ 11A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1865 pF @ 100 V - 2.8W (Ta), 125W (Tc) 150°C (TJ) Surface Mount
RM45N600T7

RM45N600T7

MOSFET N-CH 600V 44.5A TO247

Rectron USA
2,208 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 44.5A (Tj) 10V 90mOhm @ 15.6A, 10V 4V @ 250µA - ±30V 2808 pF @ 100 V - 431W -55°C ~ 150°C (TJ) Through Hole
NTB190N65S3HF

NTB190N65S3HF

MOSFET N-CH 650V 20A D2PAK-3

onsemi
2,831 -

RFQ

NTB190N65S3HF

Технические

Tape & Reel (TR),Cut Tape (CT) FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1610 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF7N65C

FQPF7N65C

MOSFET N-CH 650V 7A TO220F

onsemi
3,119 -

RFQ

FQPF7N65C

Технические

Tube,Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ302-AZ

2SJ302-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,529 -

RFQ

2SJ302-AZ

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
NVMFS5C404NWFAFT1G

NVMFS5C404NWFAFT1G

MOSFET N-CH 40V 53A/378A 5DFN

onsemi
3,151 -

RFQ

NVMFS5C404NWFAFT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 378A (Tc) 10V 0.7mOhm @ 50A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 8400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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