| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMP3028LFDE-7MOSFET P-CH 30V 6.8A 6UDFN Diodes Incorporated |
158,602 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.8A (Ta) | 4.5V, 10V | 32mOhm @ 7A, 10V | 2.4V @ 250µA | 22 nC @ 10 V | ±20V | 1241 pF @ 15 V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
3N163-E3MOSFET P-CH 40V 50MA TO72 Vishay Siliconix |
3,293 | - |
RFQ |
Технические |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50mA (Ta) | 20V | 250Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
3N164MOSFET P-CH 30V 50MA TO72 Vishay Siliconix |
2,925 | - |
RFQ |
Технические |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 50mA (Ta) | 20V | 300Ohm @ 100µA, 20V | 5V @ 10µA | - | ±30V | 3.5 pF @ 15 V | - | 375mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
ZXMN3F30FHTAMOSFET N-CH 30V 3.8A SOT23-3 Diodes Incorporated |
14,130 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.8A (Ta) | 4.5V, 10V | 47mOhm @ 3.2A, 10V | 3V @ 250µA | 7.7 nC @ 10 V | ±20V | 318 pF @ 15 V | - | 950mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFD113MOSFET N-CH 60V 800MA 4DIP Vishay Siliconix |
2,746 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFD213MOSFET N-CH 250V 450MA 4DIP Vishay Siliconix |
2,953 | - |
RFQ |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 450mA (Ta) | - | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | - | 140 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole | |
|
NTGS4111PT1GMOSFET P-CH 30V 2.6A 6TSOP onsemi |
35,002 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.6A (Ta) | 4.5V, 10V | 60mOhm @ 3.7A, 10V | 3V @ 250µA | 32 nC @ 10 V | ±20V | 750 pF @ 15 V | - | 630mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFD9123MOSFET P-CH 100V 1A 4DIP Vishay Siliconix |
2,529 | - |
RFQ |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | - | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | - | 390 pF @ 25 V | - | - | - | Through Hole | |
|
DMG3414U-7MOSFET N-CH 20V 4.2A SOT23-3 Diodes Incorporated |
283,173 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 1.8V, 4.5V | 25mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 9.6 nC @ 4.5 V | ±8V | 829.9 pF @ 10 V | - | 780mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
ZXM61N03FTAMOSFET N-CH 30V 1.4A SOT23-3 Diodes Incorporated |
142,179 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4.5V, 10V | 220mOhm @ 910mA, 10V | 1V @ 250µA | 4.1 nC @ 10 V | ±20V | 150 pF @ 25 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLML0060TRPBFMOSFET N-CH 60V 2.7A SOT23 Infineon Technologies |
2,188 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.7A (Ta) | 4.5V, 10V | 92mOhm @ 2.7A, 10V | 2.5V @ 25µA | 2.5 nC @ 4.5 V | ±16V | 290 pF @ 25 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSS169H6327XTSA1MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies |
92,729 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8 nC @ 7 V | ±20V | 68 pF @ 25 V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
TSM2323CX RFGMOSFET P-CHANNEL 20V 4.7A SOT23 Taiwan Semiconductor Corporation |
102,885 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.7A (Ta) | 1.8V, 4.5V | 39mOhm @ 4.7A, 4.5V | 1V @ 250µA | 12.5 nC @ 4.5 V | ±8V | 1020 pF @ 10 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
AON6558MOSFET N-CH 30V 25A/28A 8DFN Alpha & Omega Semiconductor Inc. |
188,576 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | AlphaMOS | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta), 28A (Tc) | 4.5V, 10V | 5.1mOhm @ 20A, 10V | 2.2V @ 250µA | 25 nC @ 10 V | ±20V | 1128 pF @ 15 V | - | 5W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
STL31N65M5MOSFET N-CH 650V 15A PWRFLAT88 STMicroelectronics |
3,404 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.8A (Ta), 15A (Tc) | 10V | 162mOhm @ 11A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±25V | 1865 pF @ 100 V | - | 2.8W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount |
|
RM45N600T7MOSFET N-CH 600V 44.5A TO247 Rectron USA |
2,208 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 44.5A (Tj) | 10V | 90mOhm @ 15.6A, 10V | 4V @ 250µA | - | ±30V | 2808 pF @ 100 V | - | 431W | -55°C ~ 150°C (TJ) | Through Hole | |
|
NTB190N65S3HFMOSFET N-CH 650V 20A D2PAK-3 onsemi |
2,831 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 430µA | 34 nC @ 10 V | ±30V | 1610 pF @ 400 V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FQPF7N65CMOSFET N-CH 650V 7A TO220F onsemi |
3,119 | - |
RFQ |
Технические |
Tube,Tube | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1245 pF @ 25 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
2SJ302-AZP-CHANNEL POWER MOSFET Renesas Electronics America Inc |
3,529 | - |
RFQ |
Технические |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVMFS5C404NWFAFT1GMOSFET N-CH 40V 53A/378A 5DFN onsemi |
3,151 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |