Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR3806TRPBF

IRFR3806TRPBF

MOSFET N-CH 60V 43A DPAK

Infineon Technologies
45,897 -

RFQ

IRFR3806TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR418DP-T1-GE3

SIR418DP-T1-GE3

MOSFET N-CH 40V 40A PPAK SO-8

Vishay Siliconix
33,465 -

RFQ

SIR418DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 2410 pF @ 20 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR696DP-T1-GE3

SIR696DP-T1-GE3

MOSFET N-CH 125V 60A PPAK SO-8

Vishay Siliconix
11,378 -

RFQ

SIR696DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 125 V 60A (Tc) 7.5V, 10V 11.5mOhm @ 20A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1410 pF @ 75 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR1205TRPBF

IRFR1205TRPBF

MOSFET N-CH 55V 44A DPAK

Infineon Technologies
3,925 -

RFQ

IRFR1205TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD8N50NZTM

FDD8N50NZTM

MOSFET N-CH 500V 6.5A DPAK

onsemi
14,975 -

RFQ

FDD8N50NZTM

Технические

Tape & Reel (TR),Cut Tape (CT) UniFET-II™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 6.5A (Tc) 10V 850mOhm @ 3.25A, 10V 5V @ 250µA 18 nC @ 10 V ±25V 735 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC032N04LSATMA1

BSC032N04LSATMA1

MOSFET N-CH 40V 21A/98A TDSON

Infineon Technologies
23,703 -

RFQ

BSC032N04LSATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 98A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2V @ 250µA 25 nC @ 10 V ±20V 1800 pF @ 20 V - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4874BDY-T1-E3

SI4874BDY-T1-E3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix
9,562 -

RFQ

SI4874BDY-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 7mOhm @ 16A, 10V 3V @ 250µA 25 nC @ 4.5 V ±20V 3230 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2318CX RFG

TSM2318CX RFG

MOSFET N-CHANNEL 40V 3.9A SOT23

Taiwan Semiconductor Corporation
58,599 -

RFQ

TSM2318CX RFG

Технические

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 3.9A (Ta) 4.5V, 10V 45mOhm @ 3.9A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 540 pF @ 20 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC035N04LSGATMA1

BSC035N04LSGATMA1

MOSFET N-CH 40V 21A/100A TDSON

Infineon Technologies
41,096 -

RFQ

BSC035N04LSGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 100A (Tc) 4.5V, 10V 3.5mOhm @ 50A, 10V 2V @ 36µA 64 nC @ 10 V ±20V 5100 pF @ 20 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5305TRPBF

IRFR5305TRPBF

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
41,168 -

RFQ

IRFR5305TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MIC94052YC6-TR

MIC94052YC6-TR

MOSFET P-CH 6V 2A SC70-6

Microchip Technology
42,150 -

RFQ

MIC94052YC6-TR

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 6 V 2A (Ta) 1.8V, 4.5V 84mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V - - 270mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
IPD33CN10NGATMA1

IPD33CN10NGATMA1

MOSFET N-CH 100V 27A TO252-3

Infineon Technologies
13,336 -

RFQ

IPD33CN10NGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 33mOhm @ 27A, 10V 4V @ 29µA 24 nC @ 10 V ±20V 1570 pF @ 50 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR606BDP-T1-RE3

SIR606BDP-T1-RE3

MOSFET N-CH 100V 10.9A PPAK

Vishay Siliconix
38,109 -

RFQ

SIR606BDP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 10.9A (Ta), 38.7A (Tc) 7.5V, 10V 17.4mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1470 pF @ 50 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC8622

FDMC8622

MOSFET N-CH 100V 4A/16A 8MLP

onsemi
40,307 -

RFQ

FDMC8622

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4A (Ta), 16A (Tc) 6V, 10V 56mOhm @ 4A, 10V 4V @ 250µA 7.3 nC @ 10 V ±20V 402 pF @ 50 V - 2.5W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCD600N60Z

FCD600N60Z

MOSFET N-CH 600V 7.4A DPAK

onsemi
3,914 -

RFQ

FCD600N60Z

Технические

Tape & Reel (TR),Cut Tape (CT) SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPHR9003NL1,LQ

TPHR9003NL1,LQ

UMOS9 SOP-ADV(N) PD=78W F=1MHZ

Toshiba Semiconductor and Storage
14,367 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2.3V @ 1mA 74 nC @ 10 V ±20V 6900 pF @ 15 V - 800mW (Ta), 170W (Tc) 150°C Surface Mount
IAUC100N04S6L014ATMA1

IAUC100N04S6L014ATMA1

IAUC100N04S6L014ATMA1

Infineon Technologies
14,975 -

RFQ

IAUC100N04S6L014ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 50µA 65 nC @ 10 V ±16V 3935 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC025N03LSGATMA1

BSC025N03LSGATMA1

MOSFET N-CH 30V 25A/100A TDSON

Infineon Technologies
23,724 -

RFQ

BSC025N03LSGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 100A (Tc) 4.5V, 10V 2.5mOhm @ 30A, 10V 2.2V @ 250µA 74 nC @ 10 V ±20V 6100 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR2905TRPBF

IRLR2905TRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
83,901 -

RFQ

IRLR2905TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2905TRLPBF

IRLR2905TRLPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,995 -

RFQ

IRLR2905TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь