| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD60R400CEAUMA1MOSFET N-CH 600V 14.7A TO252 Infineon Technologies |
7,429 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14.7A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 112W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRFR3504ZTRPBFMOSFET N-CH 40V 42A DPAK Infineon Technologies |
7,922 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPD036N04LGATMA1MOSFET N-CH 40V 90A TO252-31 Infineon Technologies |
23,414 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ 3 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 3.6mOhm @ 90A, 10V | 2V @ 45µA | 78 nC @ 10 V | ±20V | 6300 pF @ 20 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPW80R290C3AN-CHANNEL AUTOMOTIVE MOSFET Infineon Technologies |
3,507 | - |
RFQ |
Технические |
Bulk | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117 nC @ 10 V | ±20V | 2300 pF @ 100 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
IRLR2908TRPBFMOSFET N-CH 80V 30A DPAK Infineon Technologies |
40,592 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33 nC @ 4.5 V | ±16V | 1890 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
2SK4124N-CHANNEL SILICON MOSFET Sanyo |
3,902 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Ta) | 10V | 430mOhm @ 8A, 10V | - | 46.6 nC @ 10 V | ±30V | 1200 pF @ 30 V | - | 2.5W (Ta), 170W (Tc) | 150°C (TJ) | Through Hole |
|
IXTY26P10TMOSFET P-CH 100V 26A TO252 IXYS |
151 | - |
RFQ |
Технические |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 26A (Tc) | 10V | 90mOhm @ 13A, 10V | 4.5V @ 250µA | 52 nC @ 10 V | ±15V | 3820 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FCP125N60EMOSFET N-CH 600V 29A TO220-3 onsemi |
2,988 | - |
RFQ |
Технические |
Bulk,Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95 nC @ 10 V | ±20V | 2990 pF @ 380 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
RFH75N0575A, 50V, 0.008OHM, N-CHANNEL Harris Corporation |
3,605 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | - | - | - | - | - | - | - | - | - | - | |
|
NTP150N65S3HFMOSFET N-CH 650V 24A TO220-3 onsemi |
2,267 | - |
RFQ |
Технические |
Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 43 nC @ 10 V | ±30V | 1985 pF @ 400 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHP080N60E-GE3E SERIES POWER MOSFET TO-220AB Vishay Siliconix |
3,236 | - |
RFQ |
Технические |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 80mOhm @ 17A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2557 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | |
|
PSMN5R6-100PS,127MOSFET N-CH 100V 100A TO220AB Nexperia USA Inc. |
3,215 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 5.6mOhm @ 25A, 10V | 4V @ 1mA | 141 nC @ 10 V | ±20V | 8061 pF @ 50 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
PSMP050N10NS2_T0_00601100V/ 5MOHM/ LOW FOM MOSFET Panjit International Inc. |
2,368 | - |
RFQ |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
AOTF10T60PLMOSFET N-CH 600V 10A TO220F Alpha & Omega Semiconductor Inc. |
3,557 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1595 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
AOTF12T50PMOSFET N-CH 500V 12A TO220-3F Alpha & Omega Semiconductor Inc. |
2,474 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5V @ 250µA | 32 nC @ 10 V | ±30V | 1477 pF @ 100 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
AOW10T60PMOSFET N-CH 600V 10A TO262 Alpha & Omega Semiconductor Inc. |
3,697 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1595 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTP120N075T2MOSFET N-CH 75V 120A TO220AB IXYS |
3,568 | - |
RFQ |
Технические |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 7.7mOhm @ 60A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 4740 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
AOWF10T60PMOSFET N-CH 600V 10A TO262F Alpha & Omega Semiconductor Inc. |
3,066 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1595 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BFL4036MOSFET N-CH 500V 9.6A TO220F-3FS Sanyo |
2,192 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.6A (Tc) | - | 520mOhm @ 7A, 10V | 5V @ 1mA | 38.4 nC @ 10 V | ±30V | 1000 pF @ 30 V | - | 2W (Ta), 37W (Tc) | 150°C | Through Hole |
|
|
AOWF11C60MOSFET N-CH 600V 11A TO262F Alpha & Omega Semiconductor Inc. |
2,238 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 42 nC @ 10 V | ±30V | 2000 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |