Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB105N60EF-GE3

SIHB105N60EF-GE3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix
2,001 -

RFQ

SIHB105N60EF-GE3

Технические

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF125N65S3

FCPF125N65S3

MOSFET N-CH 650V 24A TO220F

onsemi
990 -

RFQ

FCPF125N65S3

Технические

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 2.4mA 44 nC @ 10 V ±30V 1790 pF @ 400 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA50R140CPXK

IPA50R140CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies
3,547 -

RFQ

IPA50R140CPXK

Технические

Bulk * Active - - - - - - - - - - - - - -
RJK4512DPP-00#T2

RJK4512DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,733 -

RFQ

RJK4512DPP-00#T2

Технические

Bulk * Active - - - - - - - - - - - - - -
IRFS7530-7PPBF

IRFS7530-7PPBF

MOSFET N CH 60V 240A D2PAK

Infineon Technologies
3,893 -

RFQ

IRFS7530-7PPBF

Технические

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.7V @ 250µA 354 nC @ 10 V ±20V 12960 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7530PBF

IRFS7530PBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,458 -

RFQ

IRFS7530PBF

Технические

Bulk,Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7534-7PPBF

IRFS7534-7PPBF

MOSFET N CH 60V 240A D2PAK

Infineon Technologies
2,608 -

RFQ

IRFS7534-7PPBF

Технические

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.95mOhm @ 100A, 10V 3.7V @ 250µA 300 nC @ 10 V ±20V 9990 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7534PBF

IRFS7534PBF

MOSFET N CH 60V 195A D2PAK

Infineon Technologies
3,667 -

RFQ

IRFS7534PBF

Технические

Tube,Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7537PBF

IRFS7537PBF

MOSFET N CH 60V 173A D2PAK

Infineon Technologies
2,512 -

RFQ

IRFS7537PBF

Технические

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7540PBF

IRFS7540PBF

MOSFET N CH 60V 110A D2PAK

Infineon Technologies
3,557 -

RFQ

IRFS7540PBF

Технические

Tube,Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AON7536

AON7536

MOSFET N-CH 30V 24A/68A 8DFN

Alpha & Omega Semiconductor Inc.
2,249 -

RFQ

AON7536

Технические

Tape & Reel (TR),Cut Tape (CT) AlphaMOS Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 68A (Tc) 4.5V, 10V 4.2mOhm @ 20A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 2350 pF @ 15 V - 4.1W (Ta), 32.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF11N65

FCPF11N65

MOSFET N-CH 650V 11A TO220F

onsemi
2,575 -

RFQ

FCPF11N65

Технические

Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) - 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V - 1490 pF @ 25 V - 36W (Tc) - Through Hole
FQA13N50C-F109

FQA13N50C-F109

MOSFET N-CH 500V 13.5A TO3P

onsemi
2,127 -

RFQ

FQA13N50C-F109

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13.5A (Tc) 10V 480mOhm @ 6.75A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 218W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF4N90CT

FQPF4N90CT

MOSFET N-CH 900V 4A TO220F

onsemi
2,911 -

RFQ

FQPF4N90CT

Технические

Bulk,Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 4.2Ohm @ 2A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 960 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJ1L12BGNTLL

RJ1L12BGNTLL

NCH 60V 120A POWER MOSFET : RJ1L

Rohm Semiconductor
2,024 -

RFQ

RJ1L12BGNTLL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) 4.5V, 10V 2.9mOhm @ 40A, 10V 2.5V @ 500µA 175 nC @ 10 V ±20V 9000 pF @ 30 V - 192W (Ta) 150°C (TJ) Surface Mount
IPT014N08NM5ATMA1

IPT014N08NM5ATMA1

MOSFET N-CH 80V 37A/331A HSOF-8

Infineon Technologies
2,921 -

RFQ

IPT014N08NM5ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Ta), 331A (Tc) 6V, 10V 1.4mOhm @ 150A, 10V 3.8V @ 280µA 200 nC @ 10 V ±20V 14000 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75631S3ST

HUF75631S3ST

MOSFET N-CH 100V 33A D2PAK

onsemi
2,531 -

RFQ

HUF75631S3ST

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 40mOhm @ 33A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP05N100M

IXTP05N100M

MOSFET N-CH 1000V 700MA TO220AB

IXYS
3,894 -

RFQ

IXTP05N100M

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 700mA (Tc) 10V 17Ohm @ 375mA, 10V 4.5V @ 25µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1R4N120P

IXTY1R4N120P

MOSFET N-CH 1200V 1.4A TO252

IXYS
3,875 -

RFQ

IXTY1R4N120P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V - 4.5V @ 100µA - ±20V - - - -55°C ~ 150°C (TJ) Surface Mount
IXFP4N85X

IXFP4N85X

MOSFET N-CH 850V 3.5A TO220AB

IXYS
3,695 -

RFQ

IXFP4N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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