Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP3206PBF

IRFP3206PBF

MOSFET N-CH 60V 120A TO247AC

Infineon Technologies
12,301 -

RFQ

IRFP3206PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 280W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3006TRL7PP

IRFS3006TRL7PP

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies
1,380 -

RFQ

IRFS3006TRL7PP

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK1318-90-E

2SK1318-90-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,781 -

RFQ

2SK1318-90-E

Технические

Bulk * Active - - - - - - - - - - - - - -
IXTH11P50

IXTH11P50

MOSFET P-CH 500V 11A TO247

IXYS
300 -

RFQ

IXTH11P50

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 750mOhm @ 5.5A, 10V 5V @ 250µA 130 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R070C6FKSA1

IPW60R070C6FKSA1

MOSFET N-CH 600V 53A TO247-3

Infineon Technologies
408 -

RFQ

IPW60R070C6FKSA1

Технические

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 70mOhm @ 25.8A, 10V 3.5V @ 1.72mA 170 nC @ 10 V ±20V 3800 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH90P10P

IXTH90P10P

MOSFET P-CH 100V 90A TO247

IXYS
4,240 -

RFQ

IXTH90P10P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 25mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5800 pF @ 25 V - 462W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH48P20P

IXTH48P20P

MOSFET P-CH 200V 48A TO247

IXYS
4,857 -

RFQ

IXTH48P20P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) 10V 85mOhm @ 500mA, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 5400 pF @ 25 V - 462W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R041C6FKSA1

IPW60R041C6FKSA1

MOSFET N-CH 600V 77.5A TO247-3

Infineon Technologies
3,065 -

RFQ

IPW60R041C6FKSA1

Технические

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 77.5A (Tc) 10V 41mOhm @ 44.4A, 10V 3.5V @ 2.96mA 290 nC @ 10 V ±20V 6530 pF @ 10 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R045CPAFKSA1

IPW60R045CPAFKSA1

MOSFET N-CH 600V 60A TO247-3

Infineon Technologies
2,781 -

RFQ

IPW60R045CPAFKSA1

Технические

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - 431W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPW60R018CFD7XKSA1

IPW60R018CFD7XKSA1

MOSFET N CH

Infineon Technologies
591 -

RFQ

IPW60R018CFD7XKSA1

Технические

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 101A (Tc) 10V 18mOhm @ 58.2A, 10V 4.5V @ 2.91mA 251 nC @ 10 V ±20V 9901 pF @ 400 V - 416W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3080KLHRC11

SCT3080KLHRC11

SICFET N-CH 1200V 31A TO247N

Rohm Semiconductor
249 -

RFQ

SCT3080KLHRC11

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Through Hole
IRLR7843TRPBF

IRLR7843TRPBF

MOSFET N-CH 30V 161A DPAK

Infineon Technologies
2,300 -

RFQ

IRLR7843TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD86102LZ

FDD86102LZ

MOSFET N-CH 100V 8A/35A DPAK

onsemi
7,915 -

RFQ

FDD86102LZ

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 8A (Ta), 35A (Tc) 4.5V, 10V 22.5mOhm @ 8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1540 pF @ 50 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD18N20LZ

FDD18N20LZ

MOSFET N-CH 200V 16A DPAK

onsemi
29,562 -

RFQ

FDD18N20LZ

Технические

Tape & Reel (TR),Cut Tape (CT) UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 5V, 10V 125mOhm @ 8A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 1575 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM90100E-GE3

SUM90100E-GE3

N-CHANNEL 200-V (D-S) MOSFET D2P

Vishay Siliconix
3,564 -

RFQ

SUM90100E-GE3

Технические

Bulk TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 7.5V, 10V 11.4mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3930 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIJH600E-T1-GE3

SIJH600E-T1-GE3

N-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix
3,478 -

RFQ

SIJH600E-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Ta), 373A (Tc) 7.5V, 10V 0.92Ohm @ 20A, 10V 4V @ 250µA 212 nC @ 10 V ±20V 9950 pF @ 30 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL9401-F085T6

FDBL9401-F085T6

MOSFET N-CH 40V 58.4/240A 8HPSOF

onsemi
2,699 -

RFQ

FDBL9401-F085T6

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 58.4A (Ta), 240A (Tc) - 0.67mOhm @ 50A, 10V 4V @ 290µA 148 nC @ 10 V +20V, -16V 10000 pF @ 25 V - 4.3W (Ta), 180.7W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA11N60C3XKSA1

SPA11N60C3XKSA1

MOSFET N-CH 600V 11A TO220-3

Infineon Technologies
3,060 -

RFQ

SPA11N60C3XKSA1

Технические

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF850N80Z

FCPF850N80Z

MOSFET N-CH 800V 6A TO220F

onsemi
3,203 -

RFQ

FCPF850N80Z

Технические

Bulk,Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS0D55N03CGT1G

NTMFS0D55N03CGT1G

WIDE SOA

onsemi
2,836 -

RFQ

NTMFS0D55N03CGT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 10V 580µOhm @ 30A, 10V 2.2V @ 330µA 224.9 nC @ 10 V ±20V 18500 pF @ 15 V - 1.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
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