Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOI4T60

AOI4T60

MOSFET N-CH 600V 4A TO251A

Alpha & Omega Semiconductor Inc.
2,159 -

RFQ

AOI4T60

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.1Ohm @ 1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 460 pF @ 100 V - 83W (Tc) -50°C ~ 150°C (TJ) Through Hole
AON2707

AON2707

MOSFET P-CH 30V 4A 6DFN

Alpha & Omega Semiconductor Inc.
3,866 -

RFQ

AON2707

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 2.5V, 10V 117mOhm @ 4A, 10V 1.5V @ 250µA 12 nC @ 10 V ±12V 305 pF @ 15 V Schottky Diode (Isolated) 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AOT11C60L

AOT11C60L

MOSFET N-CH 600V 11A TO220

Alpha & Omega Semiconductor Inc.
2,855 -

RFQ

AOT11C60L

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 400mOhm @ 5.5A, 10V 5V @ 250µA 42 nC @ 10 V ±30V 2000 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT20C60

AOT20C60

MOSFET N-CH 600V 20A TO220

Alpha & Omega Semiconductor Inc.
2,678 -

RFQ

AOT20C60

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 3440 pF @ 100 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT20C60L

AOT20C60L

MOSFET N-CH 600V 20A TO220

Alpha & Omega Semiconductor Inc.
2,822 -

RFQ

AOT20C60L

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 3440 pF @ 100 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF10T60P

AOTF10T60P

MOSFET N-CH 600V 10A TO220-3F

Alpha & Omega Semiconductor Inc.
2,078 -

RFQ

AOTF10T60P

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 700mOhm @ 5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1595 pF @ 100 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF12T60P

AOTF12T60P

MOSFET N-CH 600V 12A TO220-3F

Alpha & Omega Semiconductor Inc.
3,923 -

RFQ

AOTF12T60P

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 520mOhm @ 6A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 2028 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF7T60P

AOTF7T60P

MOSFET N-CH 600V 7A TO220-3F

Alpha & Omega Semiconductor Inc.
3,383 -

RFQ

AOTF7T60P

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.1Ohm @ 3.5A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 965 pF @ 100 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOW20C60

AOW20C60

MOSFET N-CH 600V 20A TO262

Alpha & Omega Semiconductor Inc.
3,147 -

RFQ

AOW20C60

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 3440 pF @ 100 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFN8403TR

AUIRFN8403TR

MOSFET N-CH 40V 95A 8PQFN

Infineon Technologies
3,584 -

RFQ

AUIRFN8403TR

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 3.3mOhm @ 50A, 10V 3.9V @ 100µA 98 nC @ 10 V ±20V 3174 pF @ 25 V - 4.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MTM231232LBF

MTM231232LBF

MOSFET P-CH 20V 3A SMINI3-G1-B

Panasonic Electronic Components
2,479 -

RFQ

MTM231232LBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 55mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 1000 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
IRFR7540PBF

IRFR7540PBF

MOSFET N-CH 60V 90A DPAK

Infineon Technologies
3,643 -

RFQ

IRFR7540PBF

Технические

Tube,Tube StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7430-7PPBF

IRFS7430-7PPBF

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,777 -

RFQ

IRFS7430-7PPBF

Технические

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7434PBF

IRFS7434PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,959 -

RFQ

IRFS7434PBF

Технические

Tube HEXFET®, StrongIRFET™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

MOSFET N-CH 800V 3.9A TO251-3

Infineon Technologies
20,500 -

RFQ

IPU80R1K4CEBKMA1

Технические

Tube,Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL40SC228

IRL40SC228

MOSFET N-CH 40V 557A D2PAK

Infineon Technologies
2,615 -

RFQ

IRL40SC228

Технические

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 557A (Tc) 4.5V, 10V 0.65mOhm @ 100A, 10V 2.4V @ 250µA 307 nC @ 4.5 V ±20V 19680 pF @ 25 V - 416W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1405PBF

IRF1405PBF

MOSFET N-CH 55V 169A TO220AB

Infineon Technologies
21,847 -

RFQ

IRF1405PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 169A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP260MPBF

IRFP260MPBF

MOSFET N-CH 200V 50A TO247AC

Infineon Technologies
6,541 -

RFQ

IRFP260MPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 40mOhm @ 28A, 10V 4V @ 250µA 234 nC @ 10 V ±20V 4057 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTY01N100D

IXTY01N100D

MOSFET N-CH 1000V 400MA TO252AA

IXYS
3,303 -

RFQ

IXTY01N100D

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 400mA (Tc) 0V 80Ohm @ 50mA, 0V 4.5V @ 25µA 5.8 nC @ 5 V ±20V 100 pF @ 25 V Depletion Mode 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
EPC2050

EPC2050

TRANS GAN BUMPED DIE

EPC
18,240 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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