Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPA08N80C3XKSA1

SPA08N80C3XKSA1

MOSFET N-CH 800V 8A TO220-FP

Infineon Technologies
2,990 -

RFQ

SPA08N80C3XKSA1

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 650mOhm @ 5.1A, 10V 3.9V @ 470µA 60 nC @ 10 V ±20V 1100 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP037N08N3GXKSA1

IPP037N08N3GXKSA1

MOSFET N-CH 80V 100A TO220-3

Infineon Technologies
2,032 -

RFQ

IPP037N08N3GXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU80R2K8CEBKMA1

IPU80R2K8CEBKMA1

MOSFET N-CH 800V 1.9A TO251-3

Infineon Technologies
2,462 -

RFQ

IPU80R2K8CEBKMA1

Технические

Tube,Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 2.8Ohm @ 1.1A, 10V 3.9V @ 120µA 12 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMTSC002N10MCTXG

NTMTSC002N10MCTXG

MOSFET N-CH 100V 45A/236A 8TDFNW

onsemi
4,795 -

RFQ

NTMTSC002N10MCTXG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Ta), 236A (Tc) - 2mOhm @ 90A, 10V 4V @ 520µA 89 nC @ 10 V ±20V 6305 pF @ 50 V - 9W (Ta), 255W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IRF1404LPBF

IRF1404LPBF

MOSFET N-CH 40V 162A TO262

Infineon Technologies
4,029 -

RFQ

IRF1404LPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP3710PBF

IRFP3710PBF

MOSFET N-CH 100V 57A TO247AC

Infineon Technologies
26,170 -

RFQ

IRFP3710PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 25mOhm @ 28A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 3000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP25N40D-GE3

SIHP25N40D-GE3

MOSFET N-CH 400V 25A TO220AB

Vishay Siliconix
2,813 -

RFQ

SIHP25N40D-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 25A (Tc) 10V 170mOhm @ 13A, 10V 5V @ 250µA 88 nC @ 10 V ±30V 1707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS4229TRLPBF

IRFS4229TRLPBF

MOSFET N-CH 250V 45A D2PAK

Infineon Technologies
6,369 -

RFQ

IRFS4229TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 45A (Tc) 10V 48mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
FCB20N60FTM

FCB20N60FTM

MOSFET N-CH 600V 20A D2PAK

onsemi
800 -

RFQ

FCB20N60FTM

Технические

Tape & Reel (TR),Cut Tape (CT) SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB110N15A

FDB110N15A

MOSFET N-CH 150V 92A D2PAK

onsemi
7,200 -

RFQ

FDB110N15A

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 92A (Tc) 10V 11mOhm @ 92A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 4510 pF @ 75 V - 234W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPU80R1K0CEBKMA1

IPU80R1K0CEBKMA1

MOSFET N-CH 800V 5.7A TO251-3

Infineon Technologies
3,885 -

RFQ

IPU80R1K0CEBKMA1

Технические

Tube,Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 5.7A (Tc) 10V 950mOhm @ 3.6A, 10V 3.9V @ 250µA 31 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD80R2K8CEBTMA1

IPD80R2K8CEBTMA1

MOSFET N-CH 800V 1.9A TO252-3

Infineon Technologies
3,434 -

RFQ

IPD80R2K8CEBTMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 2.8Ohm @ 1.1A, 10V 3.9V @ 120µA 12 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF20N50FT

FDPF20N50FT

MOSFET N-CH 500V 20A TO220F

onsemi
2,942 -

RFQ

FDPF20N50FT

Технические

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 260mOhm @ 10A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3390 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS3107TRL7PP

IRFS3107TRL7PP

MOSFET N-CH 75V 240A D2PAK

Infineon Technologies
19,163 -

RFQ

IRFS3107TRL7PP

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP200N15N3GXKSA1

IPP200N15N3GXKSA1

MOSFET N-CH 150V 50A TO220-3

Infineon Technologies
10,012 -

RFQ

IPP200N15N3GXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 8V, 10V 20mOhm @ 50A, 10V 4V @ 90µA 31 nC @ 10 V ±20V 1820 pF @ 75 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3107TRLPBF

IRFS3107TRLPBF

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies
2,802 -

RFQ

IRFS3107TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SBSS84LT1G

SBSS84LT1G

MOSFET P-CH 50V 130MA SOT23-3

onsemi
340,855 -

RFQ

SBSS84LT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Last Time Buy P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V 10Ohm @ 100mA, 5V 2V @ 250µA 2.2 nC @ 10 V ±20V 36 pF @ 5 V - 225mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMXB65UPEZ

PMXB65UPEZ

MOSFET P-CH 12V 3.2A DFN1010D-3

Nexperia USA Inc.
131,865 -

RFQ

PMXB65UPEZ

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 3.2A (Ta) 1.2V, 4.5V 72mOhm @ 3.2A, 4.5V 1V @ 250µA 12 nC @ 4.5 V ±8V 634 pF @ 6 V - 317mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3139K-TP

SI3139K-TP

MOSFET P-CH 20V 660MA SOT723

Micro Commercial Co
22,382 -

RFQ

SI3139K-TP

Технические

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs P-Channel MOSFET (Metal Oxide) 20 V 660mA (Tj) 4.5V 950mOhm @ 500mA, 10V 800mV @ 250µA - ±6V 170 pF @ 16 V - 150mW -55°C ~ 150°C (TJ) Surface Mount
SSM3K376R,LF

SSM3K376R,LF

MOSFET N-CH 30V 4A SOT23F

Toshiba Semiconductor and Storage
12,337 -

RFQ

SSM3K376R,LF

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 1.8V, 4.5V 56mOhm @ 2A, 4.5V 1V @ 1mA 2.2 nC @ 4.5 V +12V, -8V 200 pF @ 10 V - 2W (Ta) 150°C Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь