Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD50R500CEATMA1

IPD50R500CEATMA1

MOSFET N-CH 500V 7.6A TO252-3

Infineon Technologies
2,458 -

RFQ

IPD50R500CEATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5010LVRG

APT5010LVRG

MOSFET N-CH 500V 47A TO264

Microchip Technology
2,128 -

RFQ

APT5010LVRG

Технические

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - Through Hole
IXFH150N20T

IXFH150N20T

MOSFET N-CH 200V 150A TO247AD

IXYS
3,029 -

RFQ

IXFH150N20T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 10V 15mOhm @ 75A, 10V 5V @ 4mA 177 nC @ 10 V ±20V 11700 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IGLD60R070D1AUMA3

IGLD60R070D1AUMA3

GANFET N-CH

Infineon Technologies
2,764 -

RFQ

IGLD60R070D1AUMA3

Технические

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 15A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGT60R070D1ATMA4

IGT60R070D1ATMA4

GANFET N-CH

Infineon Technologies
2,731 -

RFQ

IGT60R070D1ATMA4

Технические

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW90R120C3XKSA1

IPW90R120C3XKSA1

MOSFET N-CH 900V 36A TO247-3

Infineon Technologies
3,364 -

RFQ

IPW90R120C3XKSA1

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 36A (Tc) 10V 120mOhm @ 26A, 10V 3.5V @ 2.9mA 270 nC @ 10 V ±20V 6800 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD50R380CEATMA1

IPD50R380CEATMA1

MOSFET N-CH 500V 14.1A TO252-3

Infineon Technologies
2,114 -

RFQ

IPD50R380CEATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14.1A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH80N65X2-4

IXFH80N65X2-4

MOSFET N-CH 650V 80A TO247-4L

IXYS
3,870 -

RFQ

IXFH80N65X2-4

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 38mOhm @ 500mA, 10V 5V @ 4mA 140 nC @ 10 V ±30V 8300 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD37P3H6AG

STD37P3H6AG

MOSFET P-CH 30V 49A DPAK

STMicroelectronics
3,195 -

RFQ

STD37P3H6AG

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ H6 Obsolete P-Channel MOSFET (Metal Oxide) 30 V 49A (Tc) 10V 15mOhm @ 25A, 10V 4V @ 250µA 30.6 nC @ 10 V ±20V 1630 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CDM2205-800FP SL

CDM2205-800FP SL

MOSFET N-CH 800V 5A TO220FP

Central Semiconductor Corp
3,632 -

RFQ

CDM2205-800FP SL

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 2.7Ohm @ 2.5A, 10V 4V @ 250µA 17.4 nC @ 10 V 30V 705 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH110N10L2

IXTH110N10L2

MOSFET N-CH 100V 110A TO247

IXYS
2,626 -

RFQ

IXTH110N10L2

Технические

Bulk Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 18mOhm @ 500mA, 10V 4.5V @ 250µA 260 nC @ 10 V ±20V 10500 pF @ 25 V - 600W (Tc) - Through Hole
IXTK102N65X2

IXTK102N65X2

MOSFET N-CH 650V 102A TO264

IXYS
3,040 -

RFQ

IXTK102N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 102A (Tc) 10V 30mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R022M1HXTMA1

IMBG65R022M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
3,323 -

RFQ

IMBG65R022M1HXTMA1

Технические

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
NTH4L027N65S3F

NTH4L027N65S3F

MOSFET N-CH 650V 75A TO247-4

onsemi
3,493 -

RFQ

NTH4L027N65S3F

Технические

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 259 nC @ 10 V ±30V 7690 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK150N30P3

IXFK150N30P3

MOSFET N-CH 300V 150A TO264AA

IXYS
3,498 -

RFQ

IXFK150N30P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 19mOhm @ 75A, 10V 5V @ 8mA 197 nC @ 10 V ±20V 12100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL045N065SC1

NTHL045N065SC1

SIC MOS TO247-3L 650V

onsemi
3,008 -

RFQ

NTHL045N065SC1

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 66A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 291W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTHL019N65S3H

NTHL019N65S3H

MOSFET N-CH 650V 75A TO247-3

onsemi
2,548 -

RFQ

NTHL019N65S3H

Технические

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) - 19.3mOhm @ 37.5A, 10V 4V @ 14.3mA 282 nC @ 10 V ±30V 15993 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR102N65X2

IXTR102N65X2

MOSFET N-CH 650V 54A ISOPLUS247

IXYS
2,580 -

RFQ

IXTR102N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 33mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK220N20X3

IXFK220N20X3

MOSFET N-CH 200V 220A TO264

IXYS
3,715 -

RFQ

IXFK220N20X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH24N50L

IXTH24N50L

MOSFET N-CH 500V 24A TO247

IXYS
2,932 -

RFQ

IXTH24N50L

Технические

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 20V 300mOhm @ 500mA, 20V 5V @ 250µA 160 nC @ 20 V ±30V 2500 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
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