Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTHL025N065SC1

NTHL025N065SC1

SIC MOS TO247-3L 650V

onsemi
3,514 -

RFQ

NTHL025N065SC1

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 348W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTX170P10P

IXTX170P10P

MOSFET P-CH 100V 170A PLUS247-3

IXYS
2,775 -

RFQ

IXTX170P10P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 12mOhm @ 500mA, 10V 4V @ 1mA 240 nC @ 10 V ±20V 12600 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK80N65X2

IXFK80N65X2

MOSFET N-CH 650V 80A TO264

IXYS
2,930 -

RFQ

IXFK80N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 40mOhm @ 40A, 10V 5.5V @ 4mA 143 nC @ 10 V ±30V 8245 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTW40N120G2V

SCTW40N120G2V

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics
3,332 -

RFQ

SCTW40N120G2V

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 100mOhm @ 20A, 18V 4.9V @ 1mA 61 nC @ 18 V +22V, -10V 1233 pF @ 800 V - 278W (Tc) -55°C ~ 200°C (TJ) Through Hole
NVH4L022N120M3S

NVH4L022N120M3S

SIC MOS TO247-4L 22MOHM 1200V

onsemi
2,336 -

RFQ

NVH4L022N120M3S

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 18V 30mOhm @ 40A, 18V 4.4V @ 20mA 151 nC @ 18 V +22V, -10V 3175 pF @ 800 V - 352W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC040SMA120S/TR

MSC040SMA120S/TR

MOSFET SIC 1200 V 40 MOHM TO-268

Microchip Technology
3,684 -

RFQ

MSC040SMA120S/TR

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTK32P60P

IXTK32P60P

MOSFET P-CH 600V 32A TO264

IXYS
3,413 -

RFQ

IXTK32P60P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 350mOhm @ 16A, 10V 4V @ 1mA 196 nC @ 10 V ±20V 11100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH060N80-F155

FCH060N80-F155

MOSFET N-CH 800V 56A TO247

onsemi
2,010 -

RFQ

FCH060N80-F155

Технические

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 56A (Tc) 10V 60mOhm @ 29A, 10V 4.5V @ 5.8mA 350 nC @ 10 V ±20V 14685 pF @ 100 V Super Junction 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW120R040M1HXKSA1

IMW120R040M1HXKSA1

SIC DISCRETE

Infineon Technologies
3,812 -

RFQ

IMW120R040M1HXKSA1

Технические

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 15V, 18V 54.4mOhm @ 19.3A, 18V 5.2V @ 10mA 39 nC @ 18 V +20V, -5V 1620 nF @ 25 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK250N10P

IXFK250N10P

MOSFET N-CH 100V 250A TO264AA

IXYS
3,031 -

RFQ

IXFK250N10P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Tc) 10V 6.5mOhm @ 50A, 10V 5V @ 1mA 205 nC @ 10 V ±20V 16000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPZA65R018CFD7XKSA1

IPZA65R018CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
3,721 -

RFQ

IPZA65R018CFD7XKSA1

Технические

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 106A (Tc) 10V 18mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11660 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG120R030M1HXTMA1

IMBG120R030M1HXTMA1

SICFET N-CH 1.2KV 56A TO263

Infineon Technologies
3,509 -

RFQ

IMBG120R030M1HXTMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) - 41mOhm @ 25A, 18V 5.7V @ 11.5mA 63 nC @ 18 V +18V, -15V 2290 pF @ 800 V Standard 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMZA120R040M1HXKSA1

IMZA120R040M1HXKSA1

SIC DISCRETE

Infineon Technologies
2,382 -

RFQ

IMZA120R040M1HXKSA1

Технические

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 15V, 18V 54.4mOhm @ 19.3A, 18V 5.2V @ 8.3mA 39 nC @ 18 V +20V, -5V 1620 nF @ 25 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
CDM2208-800FP SL PBFREE

CDM2208-800FP SL PBFREE

MOSFET N-CH 800V 8A TO220FP

Central Semiconductor Corp
2,576 -

RFQ

CDM2208-800FP SL PBFREE

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 250µA 24.45 nC @ 10 V 30V 1110 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
VS-FC80NA20

VS-FC80NA20

MOSFET N-CH 200V 108A SOT227

Vishay General Semiconductor - Diodes Division
3,985 -

RFQ

VS-FC80NA20

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 108A (Tc) 10V 14mOhm @ 80A, 10V 5.5V @ 250µA 161 nC @ 10 V ±30V 10720 pF @ 50 V - 405W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
BUK7880-55/CUF

BUK7880-55/CUF

MOSFET N-CH 55V 3.5A SOT223

Nexperia USA Inc.
2,195 -

RFQ

BUK7880-55/CUF

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3.5A (Ta) 10V 80mOhm @ 5A, 10V 4V @ 1mA - ±16V 500 pF @ 25 V - 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMG7401SFGQ-13

DMG7401SFGQ-13

MOSFET P-CH 30V 9.8A PWRDI3333-8

Diodes Incorporated
3,022 -

RFQ

DMG7401SFGQ-13

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 9.8A (Ta) 4.5V, 20V 11mOhm @ 12A, 20V 3V @ 250µA 58 nC @ 10 V ±25V 2987 pF @ 15 V - 940mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
STL23NS3LLH7

STL23NS3LLH7

MOSFET N-CH 30V 92A POWERFLAT

STMicroelectronics
2,524 -

RFQ

STL23NS3LLH7

Технические

Tape & Reel (TR),Cut Tape (CT) STripFET™ H7 Obsolete N-Channel MOSFET (Metal Oxide) 30 V 92A (Tc) 4.5V, 10V 3.7mOhm @ 11.5A, 10V 2.3V @ 1mA 13.7 nC @ 4.5 V ±20V 2100 pF @ 15 V - 2.9W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF12N60M2

STF12N60M2

MOSFET N-CH 600V 9A TO220FP

STMicroelectronics
3,552 -

RFQ

STF12N60M2

Технические

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 450mOhm @ 4.5A, 10V 4V @ 250µA 16 nC @ 10 V ±25V 538 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
STU16N60M2

STU16N60M2

MOSFET N-CH 600V 12A IPAK

STMicroelectronics
2,190 -

RFQ

STU16N60M2

Технические

Tube MDmesh™ M2 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 700 pF @ 100 V - 110W (Tc) 150°C (TJ) Through Hole
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