| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CPH3351-TL-WMOSFET P-CH 60V 1.8A 3CPH onsemi |
2,293 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.8A (Ta) | 4V, 10V | 250mOhm @ 1A, 10V | 2.6V @ 1mA | 6 nC @ 10 V | ±20V | 262 pF @ 20 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
DMP3017SFGQ-13MOSFET P-CH 30V 11.5A PWRDI3333 Diodes Incorporated |
2,895 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11.5A (Ta) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 41 nC @ 10 V | ±25V | 2246 pF @ 15 V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP3017SFGQ-7MOSFET P-CH 30V 11.5A PWRDI3333 Diodes Incorporated |
3,596 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11.5A (Ta) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 41 nC @ 10 V | ±25V | 2246 pF @ 15 V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
GP2T040A120USIC MOSFET 1200V 40M TO-247-3L SemiQ |
3,383 | - |
RFQ |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | Through Hole | |
|
IXTH02N450HVMOSFET N-CH 4500V 200MA TO247HV IXYS |
120 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 200mA (Tc) | 10V | 625Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.6 nC @ 10 V | ±20V | 246 pF @ 25 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
GP2T040A120HSIC MOSFET 1200V 40M TO-247-4L SemiQ |
3,770 | - |
RFQ |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | Through Hole | |
|
IXFX27N80QMOSFET N-CH 800V 27A PLUS247-3 IXYS |
300 | - |
RFQ |
Технические |
Tube | HiPerFET™, Q Class | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
GA100JT17-227TRANS SJT 1700V 160A SOT227 GeneSiC Semiconductor |
3,296 | - |
RFQ |
Технические |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
|
FCD5N60-F085MOSFET N-CH 600V 4.6A DPAK onsemi |
3,692 | - |
RFQ |
Технические |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, SuperFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.6A (Tc) | 10V | 1.1Ohm @ 4.6A, 10V | 5V @ 250µA | 21 nC @ 10 V | ±30V | 570 pF @ 25 V | - | 54W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXFX40N90PMOSFET N-CH 900V 40A PLUS247-3 IXYS |
2,701 | - |
RFQ |
Технические |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 40A (Tc) | 10V | 230mOhm @ 20A, 10V | 6.5V @ 1mA | 230 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDMS9410-F085MOSFET N-CH 40V 50A POWER56 onsemi |
2,571 | - |
RFQ |
Технические |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 4.4mOhm @ 50A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±20V | 1790 pF @ 20 V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IXTA4N150HVMOSFET N-CH 1500V 4A TO263 IXYS |
2,195 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 6Ohm @ 500mA, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPB60R190P6ATMA1MOSFET N-CH 600V 20.2A D2PAK Infineon Technologies |
3,778 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37 nC @ 10 V | ±20V | 1750 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPW65R018CFD7XKSA1650 V COOLMOS CFD7 SUPERJUNCTION Infineon Technologies |
2,873 | - |
RFQ |
Технические |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 106A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±20V | 11659 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPDQ60R010S7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
3,779 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.08mA | 318 nC @ 12 V | ±20V | 11987 pF @ 300 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SCT2080KECSICFET N-CH 1200V 40A TO247 Rohm Semiconductor |
2,278 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 2080 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | Through Hole |
|
NVH4L015N065SC1SIC MOS TO247-4L 650V onsemi |
2,050 | - |
RFQ |
Технические |
Tray | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 142A (Tc) | 15V, 18V | 18mOhm @ 75A, 18V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4790 pF @ 325 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPB60R380P6ATMA1MOSFET N-CH 600V 10.6A D2PAK Infineon Technologies |
3,176 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ P6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SKP253MOSFET N-CH 250V 20A TO263-3 Sanken |
2,547 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 20A (Ta) | 10V | 95mOhm @ 10A, 10V | 4.5V @ 1mA | - | ±30V | 1600 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Surface Mount |
|
NTBG015N065SC1SILICON CARBIDE MOSFET, NCHANNEL onsemi |
3,418 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 145A (Tc) | 15V, 18V | 18mOhm @ 75A, 18V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4689 pF @ 325 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |