Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CPH3351-TL-W

CPH3351-TL-W

MOSFET P-CH 60V 1.8A 3CPH

onsemi
2,293 -

RFQ

CPH3351-TL-W

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.8A (Ta) 4V, 10V 250mOhm @ 1A, 10V 2.6V @ 1mA 6 nC @ 10 V ±20V 262 pF @ 20 V - 1W (Ta) 150°C (TJ) Surface Mount
DMP3017SFGQ-13

DMP3017SFGQ-13

MOSFET P-CH 30V 11.5A PWRDI3333

Diodes Incorporated
2,895 -

RFQ

DMP3017SFGQ-13

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta) 4.5V, 10V 10mOhm @ 11.5A, 10V 3V @ 250µA 41 nC @ 10 V ±25V 2246 pF @ 15 V - 940mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP3017SFGQ-7

DMP3017SFGQ-7

MOSFET P-CH 30V 11.5A PWRDI3333

Diodes Incorporated
3,596 -

RFQ

DMP3017SFGQ-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta) 4.5V, 10V 10mOhm @ 11.5A, 10V 3V @ 250µA 41 nC @ 10 V ±25V 2246 pF @ 15 V - 940mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
GP2T040A120U

GP2T040A120U

SIC MOSFET 1200V 40M TO-247-3L

SemiQ
3,383 -

RFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tc) 20V 52mOhm @ 40A, 20V 4V @ 10mA 118 nC @ 20 V +25V, -10V 3192 pF @ 1000 V - - -55°C ~ 175°C (TJ) Through Hole
IXTH02N450HV

IXTH02N450HV

MOSFET N-CH 4500V 200MA TO247HV

IXYS
120 -

RFQ

IXTH02N450HV

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 4500 V 200mA (Tc) 10V 625Ohm @ 10mA, 10V 6.5V @ 250µA 10.6 nC @ 10 V ±20V 246 pF @ 25 V - 113W (Tc) -55°C ~ 150°C (TJ) Through Hole
GP2T040A120H

GP2T040A120H

SIC MOSFET 1200V 40M TO-247-4L

SemiQ
3,770 -

RFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tc) 20V 52mOhm @ 40A, 20V 4V @ 10mA 118 nC @ 20 V +25V, -10V 3192 pF @ 1000 V - - -55°C ~ 175°C (TJ) Through Hole
IXFX27N80Q

IXFX27N80Q

MOSFET N-CH 800V 27A PLUS247-3

IXYS
300 -

RFQ

IXFX27N80Q

Технические

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V 320mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 7600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
GA100JT17-227

GA100JT17-227

TRANS SJT 1700V 160A SOT227

GeneSiC Semiconductor
3,296 -

RFQ

GA100JT17-227

Технические

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 160A (Tc) - 10mOhm @ 100A - - - 14400 pF @ 800 V - 535W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
FCD5N60-F085

FCD5N60-F085

MOSFET N-CH 600V 4.6A DPAK

onsemi
3,692 -

RFQ

FCD5N60-F085

Технические

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, SuperFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 1.1Ohm @ 4.6A, 10V 5V @ 250µA 21 nC @ 10 V ±30V 570 pF @ 25 V - 54W (Tj) -55°C ~ 150°C (TJ) Surface Mount
IXFX40N90P

IXFX40N90P

MOSFET N-CH 900V 40A PLUS247-3

IXYS
2,701 -

RFQ

IXFX40N90P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 40A (Tc) 10V 230mOhm @ 20A, 10V 6.5V @ 1mA 230 nC @ 10 V ±30V 14000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS9410-F085

FDMS9410-F085

MOSFET N-CH 40V 50A POWER56

onsemi
2,571 -

RFQ

FDMS9410-F085

Технические

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 4.4mOhm @ 50A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 1790 pF @ 20 V - 75W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IXTA4N150HV

IXTA4N150HV

MOSFET N-CH 1500V 4A TO263

IXYS
2,195 -

RFQ

IXTA4N150HV

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 4A (Tc) 10V 6Ohm @ 500mA, 10V 5V @ 250µA 44.5 nC @ 10 V ±30V 1576 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB60R190P6ATMA1

IPB60R190P6ATMA1

MOSFET N-CH 600V 20.2A D2PAK

Infineon Technologies
3,778 -

RFQ

IPB60R190P6ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 7.6A, 10V 4.5V @ 630µA 37 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R018CFD7XKSA1

IPW65R018CFD7XKSA1

650 V COOLMOS CFD7 SUPERJUNCTION

Infineon Technologies
2,873 -

RFQ

IPW65R018CFD7XKSA1

Технические

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 106A (Tc) 10V 18mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11659 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPDQ60R010S7XTMA1

IPDQ60R010S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
3,779 -

RFQ

IPDQ60R010S7XTMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.08mA 318 nC @ 12 V ±20V 11987 pF @ 300 V - 694W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT2080KEC

SCT2080KEC

SICFET N-CH 1200V 40A TO247

Rohm Semiconductor
2,278 -

RFQ

SCT2080KEC

Технические

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 2080 pF @ 800 V - 262W (Tc) 175°C (TJ) Through Hole
NVH4L015N065SC1

NVH4L015N065SC1

SIC MOS TO247-4L 650V

onsemi
2,050 -

RFQ

NVH4L015N065SC1

Технические

Tray Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 142A (Tc) 15V, 18V 18mOhm @ 75A, 18V 4.3V @ 25mA 283 nC @ 18 V +22V, -8V 4790 pF @ 325 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB60R380P6ATMA1

IPB60R380P6ATMA1

MOSFET N-CH 600V 10.6A D2PAK

Infineon Technologies
3,176 -

RFQ

IPB60R380P6ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 4.5V @ 320µA 19 nC @ 10 V ±20V 877 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SKP253

SKP253

MOSFET N-CH 250V 20A TO263-3

Sanken
2,547 -

RFQ

SKP253

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 95mOhm @ 10A, 10V 4.5V @ 1mA - ±30V 1600 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
NTBG015N065SC1

NTBG015N065SC1

SILICON CARBIDE MOSFET, NCHANNEL

onsemi
3,418 -

RFQ

NTBG015N065SC1

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 145A (Tc) 15V, 18V 18mOhm @ 75A, 18V 4.3V @ 25mA 283 nC @ 18 V +22V, -8V 4689 pF @ 325 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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