Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP093N06N3GHKSA1

IPP093N06N3GHKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies
3,594 -

RFQ

IPP093N06N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9.3mOhm @ 50A, 10V 4V @ 34µA 36 nC @ 10 V ±20V 2900 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP086N10N3GHKSA1

IPP086N10N3GHKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies
3,111 -

RFQ

IPP086N10N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP084N06L3GHKSA1

IPP084N06L3GHKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies
2,774 -

RFQ

IPP084N06L3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP075N15N3GHKSA1

IPP075N15N3GHKSA1

MOSFET N-CH 150V 100A TO220-3

Infineon Technologies
2,536 -

RFQ

IPP075N15N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP072N10N3GHKSA1

IPP072N10N3GHKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies
2,358 -

RFQ

IPP072N10N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7.2mOhm @ 80A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP057N08N3GHKSA1

IPP057N08N3GHKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies
2,181 -

RFQ

IPP057N08N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.7mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP057N06N3GHKSA1

IPP057N06N3GHKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
3,830 -

RFQ

IPP057N06N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP052N06L3GHKSA1

IPP052N06L3GHKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
2,607 -

RFQ

IPP052N06L3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2.2V @ 58µA 50 nC @ 4.5 V ±20V 8400 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP045N10N3GHKSA1

IPP045N10N3GHKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,545 -

RFQ

IPP045N10N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N06N3GHKSA1

IPP040N06N3GHKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies
3,906 -

RFQ

IPP040N06N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP037N08N3GHKSA1

IPP037N08N3GHKSA1

MOSFET N-CH 80V 100A TO220-3

Infineon Technologies
2,892 -

RFQ

IPP037N08N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP032N06N3GHKSA1

IPP032N06N3GHKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
2,746 -

RFQ

IPP032N06N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP030N10N3GHKSA1

IPP030N10N3GHKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,050 -

RFQ

IPP030N10N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP024N06N3GHKSA1

IPP024N06N3GHKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
3,014 -

RFQ

IPP024N06N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW37N60DM2AG

STW37N60DM2AG

MOSFET N-CH 600V 28A TO247

STMicroelectronics
3,920 -

RFQ

STW37N60DM2AG

Технические

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 54 nC @ 10 V ±25V 2400 pF @ 100 V - 210W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS9409-F085

FDMS9409-F085

MOSFET N-CH 40V 65A POWER56

onsemi
2,559 -

RFQ

FDMS9409-F085

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 65A (Tc) 10V 3.2mOhm @ 65A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 3130 pF @ 20 V - 100W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDI9409-F085

FDI9409-F085

MOSFET N-CH 40V 80A I2PAK

onsemi
3,034 -

RFQ

FDI9409-F085

Технические

Tube Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2980 pF @ 25 V - 94W (Tj) -55°C ~ 175°C (TJ) Through Hole
SIPC26N60S5X1SA1

SIPC26N60S5X1SA1

MOSFET COOL MOS SAWED WAFER

Infineon Technologies
3,494 -

RFQ

SIPC26N60S5X1SA1

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
IPB60R230P6ATMA1

IPB60R230P6ATMA1

MOSFET N-CH 600V 16.8A TO263-3

Infineon Technologies
2,367 -

RFQ

IPB60R230P6ATMA1

Технические

Tape & Reel (TR) CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16.8A (Tc) 10V 230mOhm @ 6.4A, 10V 4.5V @ 530µA 31 nC @ 10 V ±20V 1450 pF @ 100 V - 126W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPH3360-TL-W

CPH3360-TL-W

MOSFET P-CH 30V 1.6A 3CPH

onsemi
3,354 -

RFQ

CPH3360-TL-W

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4V, 10V 303mOhm @ 800mA, 10V 2.6V @ 1mA 2.2 nC @ 10 V ±20V 82 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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