Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF610

IRF610

MOSFET N-CH 200V 3.3A TO220AB

Vishay Siliconix
3,985 -

RFQ

IRF610

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF530

IRF530

MOSFET N-CH 100V 14A TO220AB

Vishay Siliconix
2,128 -

RFQ

IRF530

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF620

IRF620

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix
2,685 -

RFQ

IRF620

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -65°C ~ 150°C (TJ) Through Hole
IRF730

IRF730

MOSFET N-CH 400V 5.5A TO220AB

Vishay Siliconix
3,040 -

RFQ

IRF730

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740

IRF740

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
3,144 -

RFQ

IRF740

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF820

IRF820

MOSFET N-CH 500V 2.5A TO220AB

Vishay Siliconix
2,600 -

RFQ

IRF820

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830

IRF830

MOSFET N-CH 500V 4.5A TO220AB

Vishay Siliconix
3,569 -

RFQ

IRF830

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF720

IRF720

MOSFET N-CH 400V 3.3A TO220AB

Vishay Siliconix
2,045 -

RFQ

IRF720

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF710

IRF710

MOSFET N-CH 400V 2A TO220AB

Vishay Siliconix
3,518 -

RFQ

IRF710

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640

IRF9640

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix
3,453 -

RFQ

IRF9640

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD120

IRFD120

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix
2,712 -

RFQ

IRFD120

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 10V 270mOhm @ 780mA, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRF9520

IRF9520

MOSFET P-CH 100V 6.8A TO220AB

Vishay Siliconix
3,201 -

RFQ

IRF9520

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9610

IRF9610

MOSFET P-CH 200V 1.8A TO220AB

Vishay Siliconix
3,869 -

RFQ

IRF9610

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD220

IRFD220

MOSFET N-CH 200V 800MA 4DIP

Vishay Siliconix
3,742 -

RFQ

IRFD220

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 800mA (Ta) 10V 800mOhm @ 480mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRF9530

IRF9530

MOSFET P-CH 100V 12A TO220AB

Vishay Siliconix
3,104 -

RFQ

IRF9530

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9620

IRF9620

MOSFET P-CH 200V 3.5A TO220AB

Vishay Siliconix
2,295 -

RFQ

IRF9620

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD9210

IRFD9210

MOSFET P-CH 200V 400MA 4DIP

Vishay Siliconix
2,161 -

RFQ

IRFD9210

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 400mA (Ta) 10V 3Ohm @ 240mA, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFZ20

IRFZ20

MOSFET N-CH 50V 15A TO220AB

Vishay Siliconix
3,919 -

RFQ

IRFZ20

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 850 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF520

IRF520

MOSFET N-CH 100V 9.2A TO220AB

Vishay Siliconix
3,112 -

RFQ

IRF520

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9540

IRF9540

MOSFET P-CH 100V 19A TO220AB

Vishay Siliconix
3,805 -

RFQ

IRF9540

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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