Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP350

IRFP350

MOSFET N-CH 400V 16A TO247-3

Vishay Siliconix
3,687 -

RFQ

IRFP350

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 9.6A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF634

IRF634

MOSFET N-CH 250V 8.1A TO220AB

Vishay Siliconix
3,138 -

RFQ

IRF634

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL530

IRL530

MOSFET N-CH 100V 15A TO220AB

Vishay Siliconix
3,573 -

RFQ

IRL530

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLD120

IRLD120

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix
2,450 -

RFQ

IRLD120

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 4V, 5V 270mOhm @ 780mA, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRLZ24

IRLZ24

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix
3,530 -

RFQ

IRLZ24

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLD014

IRLD014

MOSFET N-CH 60V 1.7A 4DIP

Vishay Siliconix
2,301 -

RFQ

IRLD014

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.7A (Ta) 4V, 5V 200mOhm @ 1A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRL540

IRL540

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix
2,914 -

RFQ

IRL540

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL520

IRL520

MOSFET N-CH 100V 9.2A TO220AB

Vishay Siliconix
3,669 -

RFQ

IRL520

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL510

IRL510

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix
3,601 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34

IRLZ34

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix
3,000 -

RFQ

IRLZ34

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLD024

IRLD024

MOSFET N-CH 60V 2.5A 4DIP

Vishay Siliconix
2,194 -

RFQ

IRLD024

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta) 4V, 5V 100mOhm @ 1.5A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRLZ14

IRLZ14

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
3,973 -

RFQ

IRLZ14

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLD110

IRLD110

MOSFET N-CH 100V 1A 4DIP

Vishay Siliconix
3,282 -

RFQ

IRLD110

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 4V, 5V 540mOhm @ 600mA, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFP244

IRFP244

MOSFET N-CH 250V 15A TO247-3

Vishay Siliconix
2,616 -

RFQ

IRFP244

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 280mOhm @ 9A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR014

IRFR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
3,603 -

RFQ

IRFR014

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ24

IRFZ24

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix
2,165 -

RFQ

IRFZ24

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP9140

IRFP9140

MOSFET P-CH 100V 21A TO247-3

Vishay Siliconix
3,597 -

RFQ

IRFP9140

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 10V 200mOhm @ 13A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ14

IRFZ14

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
3,931 -

RFQ

IRFZ14

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBC20

IRFBC20

MOSFET N-CH 600V 2.2A TO220AB

Vishay Siliconix
2,861 -

RFQ

IRFBC20

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30

IRFBC30

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix
2,514 -

RFQ

IRFBC30

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь