Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFPG50

IRFPG50

MOSFET N-CH 1000V 6.1A TO247-3

Vishay Siliconix
2,819 -

RFQ

IRFPG50

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 6.1A (Tc) 10V 2Ohm @ 3.6A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP9240

IRFP9240

MOSFET P-CH 200V 12A TO247-3

Vishay Siliconix
3,062 -

RFQ

IRFP9240

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE20

IRFBE20

MOSFET N-CH 800V 1.8A TO220AB

Vishay Siliconix
2,852 -

RFQ

IRFBE20

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30

IRFBE30

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix
3,075 -

RFQ

IRFBE30

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF20

IRFBF20

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix
2,819 -

RFQ

IRFBF20

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF30

IRFBF30

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix
2,871 -

RFQ

IRFBF30

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBG20

IRFBG20

MOSFET N-CH 1000V 1.4A TO220AB

Vishay Siliconix
3,899 -

RFQ

IRFBG20

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 500 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBG30

IRFBG30

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix
2,882 -

RFQ

IRFBG30

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI830G

IRFI830G

MOSFET N-CH 500V 3.1A TO220-3

Vishay Siliconix
3,122 -

RFQ

IRFI830G

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 10V 1.5Ohm @ 1.9A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR9210

IRFR9210

MOSFET P-CH 200V 1.9A DPAK

Vishay Siliconix
2,343 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF614S

IRF614S

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
2,720 -

RFQ

IRF614S

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF624S

IRF624S

MOSFET N-CH 250V 4.4A D2PAK

Vishay Siliconix
2,549 -

RFQ

IRF624S

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF634S

IRF634S

MOSFET N-CH 250V 8.1A D2PAK

Vishay Siliconix
2,587 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF644S

IRF644S

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
3,286 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF710S

IRF710S

MOSFET N-CH 400V 2A D2PAK

Vishay Siliconix
2,670 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF720S

IRF720S

MOSFET N-CH 400V 3.3A D2PAK

Vishay Siliconix
3,490 -

RFQ

IRF720S

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730S

IRF730S

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
3,442 -

RFQ

IRF730S

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740S

IRF740S

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
2,739 -

RFQ

IRF740S

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF820S

IRF820S

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
3,370 -

RFQ

IRF820S

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830S

IRF830S

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix
2,633 -

RFQ

IRF830S

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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