| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
V30406-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
3,293 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
V30408-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
3,992 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
V30410-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
2,080 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
V30419-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
2,425 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
V30429-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
3,883 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
V30431-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
2,141 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
V30432-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
3,058 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
V30433-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
2,865 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
V30434-T1-GE3MOSFET N-CH SMD Vishay Siliconix |
3,152 | - |
RFQ |
Tape & Reel (TR) | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IXTT48P20PMOSFET P-CH 200V 48A TO268 IXYS |
3,796 | - |
RFQ |
Технические |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 48A (Tc) | 10V | 85mOhm @ 24A, 10V | 4.5V @ 250µA | 103 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AOI2N60MOSFET N-CH 600V 2A TO251A Alpha & Omega Semiconductor Inc. |
2,885 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 11 nC @ 10 V | ±30V | 325 pF @ 25 V | - | 56.8W (Tc) | -50°C ~ 150°C (TJ) | Through Hole |
|
IMW120R090M1HXKSA1SICFET N-CH 1.2KV 26A TO247-3 Infineon Technologies |
370 | - |
RFQ |
Технические |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | +23V, -7V | 707 pF @ 800 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
MSC080SMA120BSICFET N-CH 1200V 37A TO247-3 Microchip Technology |
3,579 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
TP65H070LDGGANFET N-CH 650V 25A 3PQFN Transphorm |
293 | - |
RFQ |
Технические |
Tube | TP65H070L | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
ZVN3306ASTZMOSFET N-CH 60V 270MA E-LINE Diodes Incorporated |
3,554 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 270mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 35 pF @ 18 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPP65R041CFD7XKSA1650V FET COOLMOS TO247 Infineon Technologies |
144 | - |
RFQ |
Технические |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
ZVN3310ASTZMOSFET N-CH 100V 200MA E-LINE Diodes Incorporated |
3,114 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200mA (Ta) | 10V | 10Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 40 pF @ 25 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
DMN3009SFG-13MOSFET N-CH 30V 16A PWRDI3333 Diodes Incorporated |
2,910 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 45A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | 2000 pF @ 15 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMT10H025LK3-13MOSFET N-CH 100V 47.2A TO252 T&R Diodes Incorporated |
3,205 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 47.2A (Tc) | 4.5V, 10V | 22mOhm @ 20A, 10V | 3V @ 250µA | 21 nC @ 10 V | ±20V | 1477 pF @ 50 V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RUQ050N02TRMOSFET N-CH 20V 5A TSMT6 Rohm Semiconductor |
3,298 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 1.5V, 4.5V | 30mOhm @ 5A, 4.5V | 1.3V @ 1mA | 12 nC @ 4.5 V | ±10V | 900 pF @ 10 V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount |