| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
H5N2007LSTL-EMOSFET N-CH HS SW TO-263 Renesas Electronics America Inc |
3,437 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | - | - | - | 25A (Tj) | - | - | - | - | - | - | - | - | - | - | |
|
H5N2307LSTL-EMOSFET N-CH HS SW TO-263 Renesas Electronics America Inc |
2,822 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
FCP190N60MOSFET N-CH 600V 20.2A TO220-3 onsemi |
796 | - |
RFQ |
Технические |
Tube | SuperFET® II | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74 nC @ 10 V | ±20V | 2950 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFSL9N60APBFMOSFET N-CH 600V 9.2A I2PAK Vishay Siliconix |
457 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
EPC2306ENGRTTRANS GAN 100V .0038OHM3X5MM QFN EPC |
5,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
R6007JNXC7GMOSFET N-CH 600V 7A TO220FM Rohm Semiconductor |
2,036 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5 nC @ 15 V | ±30V | 475 pF @ 100 V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STF25N60M2-EPMOSFET N-CH 600V 18A TO220FP STMicroelectronics |
982 | - |
RFQ |
Технические |
Tube | MDmesh™ M2-EP | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29 nC @ 10 V | ±25V | 1090 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDPF190N15AMOSFET N-CH 150V 27.4A TO220F onsemi |
1,000 | - |
RFQ |
Технические |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 27.4A (Tc) | 10V | 19mOhm @ 27.4A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 2685 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FCPF7N60NTMOSFET N-CH 600V 6.8A TO220F onsemi |
1,630 | - |
RFQ |
Технические |
Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.4A, 10V | 4V @ 250µA | 35.6 nC @ 10 V | ±30V | 960 pF @ 100 V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
AOTF4185MOSFET P-CH 40V 34A TO220FL Alpha & Omega Semiconductor Inc. |
3,390 | - |
RFQ |
Технические |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 34A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 55 nC @ 10 V | ±20V | 2550 pF @ 20 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPA60R230P6XKSA1MOSFET N-CH 600V 16.8A TO220-FP Infineon Technologies |
166 | - |
RFQ |
Технические |
Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
NVTFS024N06CTAGMOSFET N-CH 60V 7A/24A 8WDFN onsemi |
2,904 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Ta), 24A (Tc) | 10V | 22.6mOhm @ 3A, 10V | 4V @ 20µA | 5.7 nC @ 10 V | ±20V | 333 pF @ 30 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
AOTF380A60LMOSFET N-CH 600V 11A TO220F Alpha & Omega Semiconductor Inc. |
2,000 | - |
RFQ |
Технические |
Tube | aMOS5™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 3.8V @ 250µA | 20 nC @ 10 V | ±20V | 955 pF @ 100 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQD9N25TM-F085MOSFET N-CH 250V 7.4A DPAK onsemi |
145,000 | - |
RFQ |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, QFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.4A (Tc) | 10V | 420mOhm @ 3.7A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
STP8NK80ZFPMOSFET N-CH 800V 6.2A TO220FP STMicroelectronics |
986 | - |
RFQ |
Технические |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.2A (Tc) | 10V | 1.5Ohm @ 3.1A, 10V | 4.5V @ 100µA | 46 nC @ 10 V | ±30V | 1320 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IAUC40N08S5L140ATMA1MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies |
2,348 | - |
RFQ |
Технические |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 40A (Tc) | 4.5V, 10V | 14mOhm @ 20A, 10V | 2V @ 15µA | 18.6 nC @ 10 V | ±20V | 1078 pF @ 40 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
TSM7ND60CIMOSFET N-CH 600V 7A ITO220 Taiwan Semiconductor Corporation |
3,970 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 3.8V @ 250µA | 25 nC @ 10 V | ±30V | 1108 pF @ 50 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
ZVP4424ASTZMOSFET P-CH 240V 200MA E-LINE Diodes Incorporated |
3,027 | - |
RFQ |
Технические |
Tape & Box (TB) | - | Active | P-Channel | MOSFET (Metal Oxide) | 240 V | 200mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200 pF @ 25 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
TSM7ND65CIMOSFET N-CH 650V 7A ITO220 Taiwan Semiconductor Corporation |
3,916 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.35Ohm @ 1.8A, 10V | 3.8V @ 250µA | 25 nC @ 10 V | ±30V | 1124 pF @ 50 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
R6009JNXC7GMOSFET N-CH 600V 9A TO220FM Rohm Semiconductor |
1,909 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22 nC @ 15 V | ±30V | 645 pF @ 100 V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |