Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HAT1127HWS-E

HAT1127HWS-E

MOSFET P-CH 30V 40A 5LFPAK

Renesas Electronics America Inc
3,255 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.5V @ 1mA 125 nC @ 10 V +10V, -20V 5600 pF @ 10 V - 30W (Tc) 150°C Surface Mount
HAT2033RWS-E

HAT2033RWS-E

MOSFET N-CH 60V 7A 8SOP

Renesas Electronics America Inc
2,684 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 4V, 10V 38mOhm @ 4A, 10V 2.2V @ 1mA - ±20V 740 pF @ 10 V - 2.5W (Ta) 150°C Surface Mount
DMT10H009LK3-13

DMT10H009LK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated
2,091 -

RFQ

DMT10H009LK3-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V 2.5V @ 250µA 20 nC @ 4.5 V ±20V 2309 pF @ 50 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HAT2165HWS-E

HAT2165HWS-E

MOSFET N-CH 30V 55A 5LFPAK

Renesas Electronics America Inc
3,653 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Ta) 4.5V, 10V 3.3mOhm @ 27.5A, 10V 2.5V @ 1mA 33 nC @ 4.5 V ±20V 5180 pF @ 10 V - 30W (Tc) 150°C Surface Mount
DMT10H009SK3-13

DMT10H009SK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated
3,374 -

RFQ

DMT10H009SK3-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 91A (Tc) 10V 9.1mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 2028 pF @ 50 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HAT2166HWS-E

HAT2166HWS-E

MOSFET N-CH 30V 45A 5LFPAK

Renesas Electronics America Inc
2,213 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta) 4.5V, 10V 3.8mOhm @ 22.5A, 10V 2.5V @ 1mA 27 nC @ 4.5 V ±20V 4400 pF @ 10 V - 25W (Tc) 150°C Surface Mount
DMT10H9M9SK3-13

DMT10H9M9SK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated
2,596 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
HAT2168HWS-E

HAT2168HWS-E

MOSFET N-CH 30V 30A 5LFPAK

Renesas Electronics America Inc
2,105 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) 4.5V, 10V 7.9mOhm @ 15A, 10V 2.5V @ 1mA 11 nC @ 4.5 V ±20V 1730 pF @ 10 V - 15W (Tc) 150°C Surface Mount
DMT10H9M9LK3-13

DMT10H9M9LK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated
2,858 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ

MOSFET P-CH 40V 10A DPAK

Toshiba Semiconductor and Storage
2,501 -

RFQ

TJ10S04M3L(T6L1,NQ

Технические

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 44mOhm @ 5A, 10V 3V @ 1mA 19 nC @ 10 V +10V, -20V 930 pF @ 10 V - 27W (Tc) 175°C (TJ) Surface Mount
TJ15S06M3L(T6L1,NQ

TJ15S06M3L(T6L1,NQ

MOSFET P-CH 60V 15A DPAK

Toshiba Semiconductor and Storage
3,931 -

RFQ

TJ15S06M3L(T6L1,NQ

Технические

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 15A (Ta) 6V, 10V 50mOhm @ 7.5A, 10V 3V @ 1mA 36 nC @ 10 V +10V, -20V 1770 pF @ 10 V - 41W (Tc) 175°C (TJ) Surface Mount
TJ20S04M3L(T6L1,NQ

TJ20S04M3L(T6L1,NQ

MOSFET P-CH 40V 20A DPAK

Toshiba Semiconductor and Storage
2,151 -

RFQ

TJ20S04M3L(T6L1,NQ

Технические

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 6V, 10V 22.2mOhm @ 10A, 10V 3V @ 1mA 37 nC @ 10 V +10V, -20V 1850 pF @ 10 V - 41W (Tc) 175°C (TJ) Surface Mount
LND150N3-G-P002

LND150N3-G-P002

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology
2,963 -

RFQ

LND150N3-G-P002

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
LND150N3-G-P013

LND150N3-G-P013

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology
2,360 -

RFQ

LND150N3-G-P013

Технические

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
AON7240

AON7240

MOSFET N-CH 40V 19A/40A 8DFN

Alpha & Omega Semiconductor Inc.
2,913 -

RFQ

AON7240

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 40A (Tc) 4.5V, 10V 5.1mOhm @ 20A, 10V 2.4V @ 250µA 35 nC @ 10 V ±20V 2200 pF @ 20 V - 3.1W (Ta), 36.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK2P90E,RQ

TK2P90E,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
3,484 -

RFQ

TK2P90E,RQ

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 900 V 2A (Ta) 10V 5.9Ohm @ 1A, 10V 4V @ 200µA 12 nC @ 10 V ±30V 500 pF @ 25 V - 80W (Tc) 150°C Surface Mount
TSM3481CX6 RFG

TSM3481CX6 RFG

MOSFET P-CHANNEL 30V 5.7A SOT26

Taiwan Semiconductor Corporation
2,682 -

RFQ

TSM3481CX6 RFG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5.7A (Ta) 4.5V, 10V 48mOhm @ 5.3A, 10V 3V @ 250µA 18.09 nC @ 10 V ±20V 1047.98 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF730BPBF

IRF730BPBF

MOSFET N-CH 400V 6A TO220AB

Vishay Siliconix
2,958 -

RFQ

IRF730BPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
HAT2170HWS-E

HAT2170HWS-E

MOSFET N-CH 40V 45A 5LFPAK

Renesas Electronics America Inc
3,888 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 45A (Ta) 7V, 10V 4.2mOhm @ 22.5A, 10V 3V @ 1mA 62 nC @ 10 V ±20V 4650 pF @ 10 V - 30W (Tc) 150°C Surface Mount
TSM2314CX RFG

TSM2314CX RFG

MOSFET N-CHANNEL 20V 4.9A SOT23

Taiwan Semiconductor Corporation
2,745 -

RFQ

TSM2314CX RFG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.9A (Tc) 1.8V, 4.5V 33mOhm @ 4.9A, 4.5V 1.2V @ 250µA 11 nC @ 4.5 V ±12V 900 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Ежедневный
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20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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