| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R6009ENXMOSFET N-CH 600V 9A TO220FM Rohm Semiconductor |
400 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 535mOhm @ 2.8A, 10V | 4V @ 1mA | 23 nC @ 10 V | ±20V | 430 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
|
IRFPC40PBFMOSFET N-CH 600V 6.8A TO247-3 Vishay Siliconix |
500 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
R6024ENXMOSFET N-CH 600V 24A TO220FM Rohm Semiconductor |
472 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
|
IRFB7740PBFMOSFET N-CH 75V 87A TO220AB Infineon Technologies |
1,126 | - |
RFQ |
Технические |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 87A (Tc) | 6V, 10V | 7.3mOhm @ 52A, 10V | 3.7V @ 100µA | 122 nC @ 10 V | ±20V | 4650 pF @ 25 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
TK22A65X5,S5XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
178 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 160mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
|
SIHP21N80AE-GE3MOSFET N-CH 800V 17.4A TO220AB Vishay Siliconix |
987 | - |
RFQ |
Технические |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±30V | 1388 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPA60R160P6XKSA1MOSFET N-CH 600V 23.8A TO220-FP Infineon Technologies |
495 | - |
RFQ |
Технические |
Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFBC40ASPBFMOSFET N-CH 600V 6.2A D2PAK Vishay Siliconix |
484 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHG21N60EF-GE3MOSFET N-CH 600V 21A TO247AC Vishay Siliconix |
118 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2030 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDA032N08MOSFET N-CH 75V 120A TO3PN onsemi |
337 | - |
RFQ |
Технические |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.2mOhm @ 75A, 10V | 4.5V @ 250µA | 220 nC @ 10 V | ±20V | 15160 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SIHG21N80AE-GE3MOSFET N-CH 800V 17.4A TO247AC Vishay Siliconix |
2,025 | - |
RFQ |
Технические |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±30V | 1388 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHG125N60EF-GE3MOSFET N-CH 600V 25A TO247AC Vishay Siliconix |
545 | - |
RFQ |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
BTS244ZE3043AKSA2MOSFET N-CH 55V 35A TO220-5-12 Infineon Technologies |
284 | - |
RFQ |
Технические |
Tube | TEMPFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
SIHF12N50C-E3MOSFET N-CH 500V 12A TO220 Vishay Siliconix |
997 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQAF13N80MOSFET N-CH 800V 8A TO3PF onsemi |
360 | - |
RFQ |
Технические |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 750mOhm @ 4A, 10V | 5V @ 250µA | 88 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FCA20N60FMOSFET N-CH 600V 20A TO3PN onsemi |
282 | - |
RFQ |
Технические |
Tube | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 3080 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STF33N60DM6MOSFET N-CH 600V 25A TO220FP STMicroelectronics |
730 | - |
RFQ |
Технические |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 128mOhm @ 12.5A, 10V | 4.75V @ 250µA | 35 nC @ 10 V | ±25V | 1500 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
NTHL110N65S3FMOSFET N-CH 650V 30A TO247-3 onsemi |
279 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58 nC @ 10 V | ±30V | 2560 pF @ 400 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
HAT1047RWS-EMOSFET P-CH 30V 14A 8SOP Renesas Electronics America Inc |
3,800 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 12mOhm @ 7A, 10V | 2.5V @ 1mA | 64 nC @ 10 V | ±20V | 3500 pF @ 10 V | - | 2.5W (Ta) | 150°C | Surface Mount | |
|
HAT1069C-EL-EMOSFET P-CH 12V 4A 6CMFPAK Renesas Electronics America Inc |
2,531 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 4A (Ta) | 1.8V, 4.5V | 52mOhm @ 1.5A, 4.5V | 1.2V @ 1mA | 16 nC @ 4.5 V | ±8V | 1380 pF @ 10 V | - | 900mW (Ta) | 150°C | Surface Mount |