| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMT31M7LPS-13MOSFET N-CH 30V 30A PWRDI5060 Diodes Incorporated |
2,827 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 3V @ 250µA | 90 nC @ 10 V | ±20V | 5741 pF @ 15 V | - | 1.3W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2SK1839-TL-ENCH 0.1A 30V MOSFET onsemi |
45,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IPSA70R600CEAKMA1MOSFET N-CH 700V 10.5A TO251-3 Infineon Technologies |
5,967 | - |
RFQ |
Технические |
Bulk,Tube | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 700 V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22 nC @ 10 V | ±20V | 474 pF @ 100 V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
BSD214SNL6327SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies |
41,600 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TK35S04K3L(T6L1,NQMOSFET N-CH 40V 35A DPAK Toshiba Semiconductor and Storage |
3,449 | - |
RFQ |
Технические |
Tape & Reel (TR) | U-MOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Ta) | 6V, 10V | 10.3mOhm @ 17.5A, 10V | 3V @ 1mA | 28 nC @ 10 V | ±20V | 1370 pF @ 10 V | - | 58W (Tc) | 175°C (TJ) | Surface Mount |
|
BSD314SPE L6327P-CHANNEL MOSFET Infineon Technologies |
10,790 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTTFS4930NTAGMOSFET N-CH 30V 4.5A/23A 8WDFN onsemi |
3,938 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.5A (Ta), 23A (Tc) | 4.5V, 10V | 23mOhm @ 6A, 10V | 2.2V @ 250µA | 5.5 nC @ 4.5 V | ±20V | 476 pF @ 15 V | - | 790mW (Ta), 20.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PMXB75UPE147P-CHANNEL MOSFET NXP USA Inc. |
4,088,434 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTMFS4927NT3GMOSFET N-CH 30V 7.9A/38A 5DFN onsemi |
2,451 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.9A (Ta), 38A (Tc) | 4.5V, 10V | 7.3mOhm @ 30A, 10V | 2.2V @ 250µA | 16 nC @ 10 V | ±20V | 913 pF @ 15 V | - | 920mW (Ta), 20.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PMN70XP115P-CHANNEL MOSFET NXP USA Inc. |
523,475 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AOTF409MOSFET P-CH 60V 5.4A/24A TO220FL Alpha & Omega Semiconductor Inc. |
2,767 | - |
RFQ |
Технические |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.4A (Ta), 24A (Tc) | 4.5V, 10V | 40mOhm @ 20A, 10V | 2.4V @ 250µA | 52 nC @ 10 V | ±20V | 2953 pF @ 30 V | - | 2.16W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
PH6930DL115SMALL SIGNAL N-CHANNEL MOSFET Nexperia USA Inc. |
342,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
TSM05N03CW RPGMOSFET N-CHANNEL 30V 5A SOT223 Taiwan Semiconductor Corporation |
3,488 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 5A, 10V | 3V @ 250µA | 7 nC @ 5 V | ±20V | 555 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PMZB200UNE315SMALL SIGNAL N-CHANNEL MOSFET NXP USA Inc. |
156,850 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SIRA72DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
3,136 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | 2.4V @ 250µA | 30 nC @ 4.5 V | +20V, -16V | 3240 pF @ 20 V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
6HN04MH-TL-EN-CHANNEL POWER MOSFET onsemi |
150,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SIR624DP-T1-RE3MOSFET N-CH 200V 5.7A/18.6A PPAK Vishay Siliconix |
3,218 | - |
RFQ |
Технические |
Tape & Reel (TR) | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.7A (Ta), 18.6A (Tc) | 7.5V, 10V | 60mOhm @ 10A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1110 pF @ 100 V | - | 5W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
6HP04MH-TL-EP-CHANNEL SMALL SIGNAL MOSFET onsemi |
102,372 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TK5P50D(T6RSS-Q)MOSFET N-CH 500V 5A DPAK Toshiba Semiconductor and Storage |
2,682 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 80W (Tc) | 150°C (TJ) | Surface Mount |
|
PMN70XPE,115NOW NEXPERIA PMN70XPE - SC-74 NXP USA Inc. |
55,858 | - |
RFQ |
Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 2.5V, 4.5V | 85mOhm @ 2A, 4.5V | 1.25V @ 250µA | 7.8 nC @ 4.5 V | ±12V | 602 pF @ 10 V | - | 500mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |