Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTT26N60P

IXTT26N60P

MOSFET N-CH 600V 26A TO268

IXYS
3,874 -

RFQ

IXTT26N60P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP6N120P

IXFP6N120P

MOSFET N-CH 1200V 6A TO220AB

IXYS
2,493 -

RFQ

IXFP6N120P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH15N60

IXFH15N60

MOSFET N-CH 600V 15A TO-247AD

IXYS
2,338 -

RFQ

IXFH15N60

Технические

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 500mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR4N100Q

IXFR4N100Q

MOSFET N-CH 1000V 3.5A ISOPLS247

IXYS
2,043 -

RFQ

IXFR4N100Q

Технические

Box HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 1000 V 3.5A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH20N60

IXFH20N60

MOSFET N-CH 600V 20A TO-247AD

IXYS
3,286 -

RFQ

IXFH20N60

Технические

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 350mOhm @ 10A, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH360N055T2

IXTH360N055T2

MOSFET N-CH 55V 360A TO247

IXYS
3,822 -

RFQ

IXTH360N055T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 360A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 20000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT70N65X3HV

IXFT70N65X3HV

MOSFET 70A 650V X3 TO268HV

IXYS
3,056 -

RFQ

Tube HiPerFET™, Ultra X3 Active - - - - - - - - - - - - - -
IXTK170N10P

IXTK170N10P

MOSFET N-CH 100V 170A TO264

IXYS
3,661 -

RFQ

IXTK170N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 9mOhm @ 500mA, 10V 5V @ 250µA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFJ20N85X

IXFJ20N85X

MOSFET N-CH 850V 9.5A ISO TO247

IXYS
2,050 -

RFQ

IXFJ20N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 9.5A (Tc) 10V 360mOhm @ 10A, 10V 5.5V @ 2.5mA 63 nC @ 10 V ±30V 1660 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKC20N60C

IXKC20N60C

MOSFET N-CH 600V 15A ISOPLUS220

IXYS
2,829 -

RFQ

IXKC20N60C

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 190mOhm @ 16A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IXTF200N10T

IXTF200N10T

MOSFET N-CH 100V 90A I4PAC

IXYS
3,994 -

RFQ

IXTF200N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 7mOhm @ 50A, 10V 4.5V @ 250µA 152 nC @ 10 V ±30V 9400 pF @ 25 V - 156W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT20N100P

IXFT20N100P

MOSFET N-CH 1000V 20A TO268

IXYS
3,449 -

RFQ

IXFT20N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 126 nC @ 10 V ±30V 7300 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT36N60P

IXFT36N60P

MOSFET N-CH 600V 36A TO268

IXYS
3,548 -

RFQ

IXFT36N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 4mA 102 nC @ 10 V ±30V 5800 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT69N30P

IXTT69N30P

MOSFET N-CH 300V 69A TO268

IXYS
2,336 -

RFQ

IXTT69N30P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 69A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 250µA 180 nC @ 10 V ±20V 4960 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT88N30P-TRL

IXFT88N30P-TRL

MOSFET N-CH 300V 88A TO268

IXYS
2,691 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH2N150

IXTH2N150

DISCMOSFET N-CH STD-HIVOLTAGE TO

IXYS
2,448 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 2A (Tc) 10V 9.2Ohm @ 500mA, 10V 5V @ 250µA 28 nC @ 10 V ±30V 830 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ48N65X2M

IXTQ48N65X2M

DISCRETE MOSFET 48A 650V X2 TO3P

IXYS
2,169 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 48A (Tc) 10V 65mOhm @ 24A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 4300 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT50P10

IXTT50P10

MOSFET P-CH 100V 50A TO268

IXYS
2,449 -

RFQ

IXTT50P10

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 55mOhm @ 25A, 10V 5V @ 250µA 140 nC @ 10 V ±20V 4350 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH52N65X

IXTH52N65X

MOSFET N-CH 650V 52A TO247

IXYS
3,278 -

RFQ

IXTH52N65X

Технические

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 52A (Tc) 10V 68mOhm @ 26A, 10V 5V @ 250µA 113 nC @ 10 V ±30V 4350 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR20N80P

IXFR20N80P

MOSFET N-CH 800V 11A ISOPLUS247

IXYS
3,041 -

RFQ

IXFR20N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 500mOhm @ 10A, 10V 5V @ 4mA 85 nC @ 10 V ±30V 4680 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ производители
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