Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTT170N10P-TR

IXTT170N10P-TR

MOSFET N-CH 100V 170A TO268

IXYS
3,517 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V, 15V 9mOhm @ 85A, 10V 5V @ 250µA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTT11P50-TRL

IXTT11P50-TRL

MOSFET P-CH 500V 11A TO268

IXYS
2,740 -

RFQ

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 750mOhm @ 5.5A, 10V 5V @ 250µA 130 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT16N80P

IXFT16N80P

MOSFET N-CH 800V 16A TO268

IXYS
2,274 -

RFQ

IXFT16N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 600mOhm @ 500mA, 10V 5V @ 4mA 71 nC @ 10 V ±30V 4600 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA36N55X2

IXFA36N55X2

IXFA36N55X2

IXYS
3,736 -

RFQ

Tube HiPerFET™, Ultra X2 Active - - - - - - - - - - - - - -
IXFQ60N25X3

IXFQ60N25X3

MOSFET N-CHANNEL 250V 60A TO3P

IXYS
3,146 -

RFQ

IXFQ60N25X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 23mOhm @ 30A, 10V 4.5V @ 1.5mA 50 nC @ 10 V ±20V 3610 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT86N30T

IXFT86N30T

MOSFET N-CH 300V 86A TO268

IXYS
2,117 -

RFQ

IXFT86N30T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 86A (Tc) 10V 43mOhm @ 500mA, 10V 5V @ 4mA 180 nC @ 10 V ±20V 11300 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFK36N60P

IXFK36N60P

MOSFET N-CH 600V 36A TO264AA

IXYS
2,392 -

RFQ

IXFK36N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 4mA 102 nC @ 10 V ±30V 5800 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ90N20X3

IXFQ90N20X3

MOSFET N-CH 200V 90A TO3P

IXYS
3,607 -

RFQ

IXFQ90N20X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12.8mOhm @ 45A, 10V 4.5V @ 1.5mA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT96N20P

IXTT96N20P

MOSFET N-CH 200V 96A TO268

IXYS
3,482 -

RFQ

IXTT96N20P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 250µA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFP130N15X3

IXFP130N15X3

MOSFET N-CH 150V 130A TO220AB

IXYS
2,062 -

RFQ

IXFP130N15X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 9mOhm @ 65A, 10V 4.5V @ 1.5mA 80 nC @ 10 V ±20V 5230 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA64N10L2-TRL

IXTA64N10L2-TRL

MOSFET N-CH 100V 64A TO263

IXYS
3,686 -

RFQ

Tape & Reel (TR) Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 64A (Tc) 10V 32mOhm @ 32A, 10V 4.5V @ 250µA 100 nC @ 10 V ±20V 3620 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA80N075L2-TRL

IXTA80N075L2-TRL

MOSFET N-CH 75V 80A TO263

IXYS
3,953 -

RFQ

Tape & Reel (TR) Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 24mOhm @ 40A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 3600 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT120N15P

IXFT120N15P

MOSFET N-CH 150V 120A TO268

IXYS
3,679 -

RFQ

IXFT120N15P

Технические

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 10V 16mOhm @ 500mA, 10V 5V @ 4mA 150 nC @ 10 V ±20V 4900 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFT50N60X

IXFT50N60X

MOSFET N-CH 600V 50A TO268

IXYS
2,272 -

RFQ

IXFT50N60X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 73mOhm @ 25A, 10V 4.5V @ 4mA 116 nC @ 10 V ±30V 4660 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA15N50L2-TRL

IXTA15N50L2-TRL

MOSFET N-CH 500V 15A TO263

IXYS
2,323 -

RFQ

Tape & Reel (TR) Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4.5V @ 250µA 123 nC @ 10 V ±20V 4080 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT6N120-TRL

IXTT6N120-TRL

MOSFET N-CH 1200V 6A TO268

IXYS
3,024 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.6Ohm @ 3A, 10V 5V @ 250µA 56 nC @ 10 V ±20V 1950 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTR36P15P

IXTR36P15P

MOSFET P-CH 150V 22A ISOPLUS247

IXYS
2,551 -

RFQ

IXTR36P15P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 150 V 22A (Tc) 10V 120mOhm @ 18A, 10V 5V @ 250µA 55 nC @ 10 V ±20V 2950 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT150N17T2

IXFT150N17T2

MOSFET N-CH 175V 150A TO268HV

IXYS
2,835 -

RFQ

IXFT150N17T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 175 V 150A (Tc) 10V 12mOhm @ 75A, 10V 4.5V @ 1mA 233 nC @ 10 V ±20V 14600 pF @ 25 V - 880W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH96N20P

IXFH96N20P

MOSFET N-CH 200V 96A TO247AD

IXYS
2,050 -

RFQ

IXFH96N20P

Технические

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 4mA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH160N15T

IXTH160N15T

MOSFET N-CH 150V 160A TO247

IXYS
2,618 -

RFQ

IXTH160N15T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 160A (Tc) 10V 9.6mOhm @ 500mA, 10V 5V @ 1mA 160 nC @ 10 V ±30V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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