Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA90N20X3

IXTA90N20X3

MOSFET N-CH 200V 90A TO263

IXYS
3,434 -

RFQ

Tube Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12mOhm @ 45A, 10V 4.5V @ 250µA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH110N15T2

IXFH110N15T2

MOSFET N-CH 150V 110A TO247AD

IXYS
2,227 -

RFQ

IXFH110N15T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 110A (Tc) 10V 13mOhm @ 500mA, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 8600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT110N10P

IXTT110N10P

MOSFET N-CH 100V 110A TO268

IXYS
2,156 -

RFQ

IXTT110N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 15mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3550 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH18N60X

IXFH18N60X

MOSFET N-CH 600V 18A TO247

IXYS
2,260 -

RFQ

IXFH18N60X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 230mOhm @ 9A, 10V 4.5V @ 1.5mA 35 nC @ 10 V ±30V 1440 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ470P2

IXTQ470P2

MOSFET N-CH 500V 42A TO3P

IXYS
2,065 -

RFQ

IXTQ470P2

Технические

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 42A (Tc) 10V 145mOhm @ 500mA, 10V 4.5V @ 250µA 88 nC @ 10 V ±30V 5400 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ3N150M

IXTQ3N150M

MOSFET N-CH 1500V 1.83A TO3PFP

IXYS
3,543 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 1.83A (Tc) 10V 7.3Ohm @ 1.5A, 10V 5V @ 250µA 38.6 nC @ 10 V ±30V 1375 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH86N25T

IXTH86N25T

MOSFET N-CH 250V 86A TO247

IXYS
3,520 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 86A (Tc) 10V 37mOhm @ 43A, 10V 5V @ 1mA 105 nC @ 10 V ±30V 5330 pF @ 25 V - 540W (Ta) -55°C ~ 150°C (TJ) Through Hole
IXFT54N65X3HV

IXFT54N65X3HV

MOSFET 54A 650V X3 TO268HV

IXYS
3,901 -

RFQ

Tube HiPerFET™, Ultra X3 Active - - - - - - - - - - - - - -
IXTT8P50

IXTT8P50

MOSFET P-CH 500V 8A TO268

IXYS
3,837 -

RFQ

IXTT8P50

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 1.2Ohm @ 4A, 10V 5V @ 250µA 130 nC @ 10 V ±20V 3400 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFQ30N60X

IXFQ30N60X

MOSFET N-CH 600V 30A TO3P

IXYS
2,293 -

RFQ

IXFQ30N60X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 155mOhm @ 15A, 10V 4.5V @ 4mA 56 nC @ 10 V ±30V 2270 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT140N10P-TRL

IXTT140N10P-TRL

MOSFET N-CH 100V 140A TO268

IXYS
2,910 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V, 15V 11mOhm @ 70A, 10V 5V @ 250µA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTT96N20P-TRL

IXTT96N20P-TRL

MOSFET N-CH 200V 96A TO268

IXYS
3,686 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 48A, 10V 5V @ 250µA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP20N65XM

IXTP20N65XM

MOSFET N-CH 650V 9A TO220

IXYS
3,698 -

RFQ

IXTP20N65XM

Технические

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 210mOhm @ 10A, 10V 5.5V @ 250µA 35 nC @ 10 V ±30V 1390 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ480P2

IXTQ480P2

MOSFET N-CH 500V 52A TO3P

IXYS
3,435 -

RFQ

IXTQ480P2

Технические

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 52A (Tc) 10V 120mOhm @ 26A, 10V 4.5V @ 250µA 108 nC @ 10 V ±30V 6800 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA20N65X

IXTA20N65X

MOSFET N-CH 650V 20A TO263

IXYS
2,079 -

RFQ

IXTA20N65X

Технические

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5.5V @ 250µA 35 nC @ 10 V ±30V 1390 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH32P20T

IXTH32P20T

MOSFET P-CH 200V 32A TO247

IXYS
2,210 -

RFQ

IXTH32P20T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT140N10P-TRL

IXFT140N10P-TRL

MOSFET N-CH 100V 140A TO268

IXYS
2,075 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V, 15V 11mOhm @ 70A, 10V 5V @ 4mA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTH2R4N120P

IXTH2R4N120P

MOSFET N-CH 1200V 2.4A TO247

IXYS
2,339 -

RFQ

IXTH2R4N120P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 2.4A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 250µA 37 nC @ 10 V ±20V 1207 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ120N15P

IXTQ120N15P

MOSFET N-CH 150V 120A TO3P

IXYS
3,075 -

RFQ

IXTQ120N15P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 10V 16mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4900 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ140N10P

IXTQ140N10P

MOSFET N-CH 100V 140A TO3P

IXYS
2,133 -

RFQ

IXTQ140N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 5V @ 250µA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
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