Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTY12N06T

IXTY12N06T

MOSFET N-CH 60V 12A TO252

IXYS
2,142 -

RFQ

IXTY12N06T

Технические

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 85mOhm @ 6A, 10V 4V @ 25µA 3.4 nC @ 10 V ±20V 256 pF @ 25 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH16N50P

IXFH16N50P

MOSFET N-CH 500V 16A TO247AD

IXYS
2,024 -

RFQ

IXFH16N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 2.5mA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP60N20T

IXTP60N20T

MOSFET N-CH 200V 60A TO220AB

IXYS
3,356 -

RFQ

IXTP60N20T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 40mOhm @ 30A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 4530 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA270N06T3

IXFA270N06T3

MOSFET N-CH 60V 270A TO263AA

IXYS
3,566 -

RFQ

IXFA270N06T3

Технические

Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 270A (Tc) 10V 3.1mOhm @ 100A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 12600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP140N12T2

IXTP140N12T2

MOSFET N-CH 120V 140A TO220AB

IXYS
2,196 -

RFQ

IXTP140N12T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 120 V 140A (Tc) 10V 10mOhm @ 70A, 10V 4.5V @ 250µA 174 nC @ 10 V ±20V 9700 pF @ 25 V - 577W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP01N100D

IXTP01N100D

MOSFET N-CH 1000V 400MA TO220AB

IXYS
2,674 -

RFQ

IXTP01N100D

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 400mA (Tc) 0V 80Ohm @ 50mA, 0V 4.5V @ 25µA 5.8 nC @ 5 V ±20V 100 pF @ 25 V Depletion Mode 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ52N30P

IXTQ52N30P

MOSFET N-CH 300V 52A TO3P

IXYS
2,497 -

RFQ

IXTQ52N30P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP130N15X4

IXTP130N15X4

MOSFET N-CH 150V 130A TO220

IXYS
3,376 -

RFQ

IXTP130N15X4

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 8.5mOhm @ 70A, 10V 4.5V @ 250µA 87 nC @ 10 V ±20V 4770 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP2R4N120P

IXTP2R4N120P

MOSFET N-CH 1200V 2.4A TO220AB

IXYS
2,752 -

RFQ

IXTP2R4N120P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 2.4A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 250µA 37 nC @ 10 V ±20V 1207 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP36P15P

IXTP36P15P

MOSFET P-CH 150V 36A TO220AB

IXYS
2,466 -

RFQ

IXTP36P15P

Технические

Tube Polar P3™ Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA180N10T2

IXFA180N10T2

MOSFET N-CH 100V 180A TO263

IXYS
2,076 -

RFQ

IXFA180N10T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFP30N25X3

IXFP30N25X3

MOSFET N-CHANNEL 250V 30A TO220

IXYS
2,980 -

RFQ

IXFP30N25X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 60mOhm @ 15A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1450 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ180N10T

IXTQ180N10T

MOSFET N-CH 100V 180A TO3P

IXYS
2,671 -

RFQ

IXTQ180N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±30V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ460P2

IXTQ460P2

MOSFET N-CH 500V 24A TO3P

IXYS
119 -

RFQ

IXTQ460P2

Технические

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 270mOhm @ 12A, 10V 4.5V @ 250µA 48 nC @ 10 V ±30V 2890 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP180N10T2

IXFP180N10T2

MOSFET N-CH 100V 180A TO220AB

IXYS
3,145 -

RFQ

IXFP180N10T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP120P065T

IXTP120P065T

MOSFET P-CH 65V 120A TO220AB

IXYS
3,536 -

RFQ

IXTP120P065T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 120A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 250µA 185 nC @ 10 V ±15V 13200 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP34N65X2

IXFP34N65X2

MOSFET N-CH 650V 34A TO220AB

IXYS
3,162 -

RFQ

IXFP34N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 105mOhm @ 17A, 10V 5.5V @ 2.5mA 56 nC @ 10 V ±30V 3330 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH18N60P

IXFH18N60P

MOSFET N-CH 600V 18A TO247AD

IXYS
3,149 -

RFQ

IXFH18N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 500mA, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH130N10T

IXTH130N10T

MOSFET N-CH 100V 130A TO247

IXYS
2,861 -

RFQ

IXTH130N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 250µA 104 nC @ 10 V ±20V 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP14N85X

IXFP14N85X

MOSFET N-CH 850V 14A TO220AB

IXYS
2,005 -

RFQ

IXFP14N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 500mA, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
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