Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFA7N100P

IXFA7N100P

MOSFET N-CH 1000V 7A TO263

IXYS
2,674 -

RFQ

IXFA7N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH230N075T2

IXFH230N075T2

MOSFET N-CH 75V 230A TO247AD

IXYS
2,821 -

RFQ

IXFH230N075T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP120N20X4

IXTP120N20X4

MOSFET

IXYS
2,231 -

RFQ

IXTP120N20X4

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 9.5mOhm @ 60A, 10V 4.5V @ 250µA 108 nC @ 10 V ±20V 6100 pF @ 25 V - 417W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH80N075L2

IXTH80N075L2

MOSFET N-CH 75V 80A TO247

IXYS
3,359 -

RFQ

IXTH80N075L2

Технические

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 24mOhm @ 40A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 3600 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ72N20X3

IXFQ72N20X3

MOSFET N-CH 200V 72A TO3P

IXYS
3,694 -

RFQ

IXFQ72N20X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH230N10T

IXFH230N10T

MOSFET N-CH 100V 230A TO247AD

IXYS
2,729 -

RFQ

IXFH230N10T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 230A (Tc) 10V 4.7mOhm @ 500mA, 10V 4.5V @ 1mA 250 nC @ 10 V ±20V 15300 pF @ 25 V - 650W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP26N65X2

IXFP26N65X2

IXFP26N65X2

IXYS
3,272 -

RFQ

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 26A (Tc) 10V 130mOhm @ 500mA, 10V 5V @ 2.5mA 45 nC @ 10 V ±30V 2450 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH120N20X4

IXTH120N20X4

MOSFET

IXYS
2,501 -

RFQ

IXTH120N20X4

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 9.5mOhm @ 60A, 10V 4.5V @ 250µA 108 nC @ 10 V ±20V 6100 pF @ 25 V - 417W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH30N60P

IXFH30N60P

MOSFET N-CH 600V 30A TO247AD

IXYS
2,822 -

RFQ

IXFH30N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 5V @ 4mA 82 nC @ 10 V ±30V 4000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT140N10P

IXTT140N10P

MOSFET N-CH 100V 140A TO268

IXYS
3,396 -

RFQ

IXTT140N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V, 15V 11mOhm @ 70A, 10V 5V @ 250µA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFT96N20P

IXFT96N20P

MOSFET N-CH 200V 96A TO268

IXYS
2,009 -

RFQ

IXFT96N20P

Технические

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 4mA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFT42N50P2

IXFT42N50P2

MOSFET N-CH 500V 42A TO268

IXYS
300 -

RFQ

IXFT42N50P2

Технические

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 42A (Tc) 10V 145mOhm @ 500mA, 10V 4.5V @ 4mA 92 nC @ 10 V ±30V 5300 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX78N50P3

IXFX78N50P3

MOSFET N-CH 500V 78A PLUS247-3

IXYS
3,842 -

RFQ

IXFX78N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 78A (Tc) 10V 68mOhm @ 500mA, 10V 5V @ 4mA 147 nC @ 10 V ±30V 9900 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT140N10P

IXFT140N10P

MOSFET N-CH 100V 140A TO268

IXYS
2,653 -

RFQ

IXFT140N10P

Технические

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 5V @ 4mA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH26N65X2

IXFH26N65X2

IXFH26N65X2

IXYS
2,020 -

RFQ

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 26A (Tc) 10V 130mOhm @ 500mA, 10V 5V @ 2.5mA 45 nC @ 10 V ±30V 2450 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ150N15P

IXTQ150N15P

MOSFET N-CH 150V 150A TO3P

IXYS
3,530 -

RFQ

IXTQ150N15P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 13mOhm @ 500mA, 10V 5V @ 250µA 190 nC @ 10 V ±20V 5800 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH6N120P

IXFH6N120P

MOSFET N-CH 1200V 6A TO247AD

IXYS
2,278 -

RFQ

IXFH6N120P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH94N20X4

IXTH94N20X4

MOSFET N-CH 200V 94A X4 TO-247

IXYS
3,816 -

RFQ

IXTH94N20X4

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 94A (Tc) 10V 10.6mOhm @ 47A, 10V 4.5V @ 250µA 77 nC @ 10 V ±20V 5050 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA130N15X3

IXFA130N15X3

MOSFET N-CH 150V 130A TO263AA

IXYS
2,282 -

RFQ

IXFA130N15X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 9mOhm @ 65A, 10V 4.5V @ 1.5mA 80 nC @ 10 V ±20V 5230 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH94N30P3

IXFH94N30P3

MOSFET N-CH 300V 94A TO247

IXYS
3,611 -

RFQ

IXFH94N30P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 102 nC @ 10 V ±20V 5510 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
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