Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFX27N80Q

IXFX27N80Q

MOSFET N-CH 800V 27A PLUS247-3

IXYS
300 -

RFQ

IXFX27N80Q

Технические

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V 320mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 7600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX40N90P

IXFX40N90P

MOSFET N-CH 900V 40A PLUS247-3

IXYS
2,701 -

RFQ

IXFX40N90P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 40A (Tc) 10V 230mOhm @ 20A, 10V 6.5V @ 1mA 230 nC @ 10 V ±30V 14000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA4N150HV

IXTA4N150HV

MOSFET N-CH 1500V 4A TO263

IXYS
2,195 -

RFQ

IXTA4N150HV

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 4A (Tc) 10V 6Ohm @ 500mA, 10V 5V @ 250µA 44.5 nC @ 10 V ±30V 1576 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTK120P20T

IXTK120P20T

MOSFET P-CH 200V 120A TO264

IXYS
3,390 -

RFQ

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) - 30mOhm @ 60A, 10V 4.5V @ 250µA 740 nC @ 10 V - 73000 pF @ 25 V - - - Through Hole
IXFN80N60P3

IXFN80N60P3

MOSFET N-CH 600V 66A SOT-227B

IXYS
3,625 -

RFQ

IXFN80N60P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 66A (Tc) 10V 70mOhm @ 40A, 10V 5V @ 8mA 190 nC @ 10 V ±30V 13100 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN100N65X2

IXFN100N65X2

MOSFET N-CH 650V 78A SOT227B

IXYS
2,645 -

RFQ

IXFN100N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 78A (Tc) 10V 30mOhm @ 50A, 10V 5V @ 4mA 183 nC @ 10 V ±30V 10800 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN32P60P

IXTN32P60P

MOSFET P-CH 600V 32A SOT227B

IXYS
3,676 -

RFQ

IXTN32P60P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 350mOhm @ 500mA, 10V 4V @ 1mA 196 nC @ 10 V ±20V 11100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN90P20P

IXTN90P20P

MOSFET P-CH 200V 90A SOT227B

IXYS
2,394 -

RFQ

IXTN90P20P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 44mOhm @ 500mA, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXKN40N60C

IXKN40N60C

MOSFET N-CH 600V 40A SOT-227B

IXYS
2,448 -

RFQ

IXKN40N60C

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 500mA, 10V 3.9V @ 2.5mA 250 nC @ 10 V ±20V - Super Junction 290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
IXTN200N10T

IXTN200N10T

MOSFET N-CH 100V 200A SOT227B

IXYS
3,705 -

RFQ

IXTN200N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 5.5mOhm @ 50A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 9400 pF @ 25 V - 550W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXTH1N250

IXTH1N250

MOSFET N-CH 2500V 1.5A TO-247AD

IXYS
3,997 -

RFQ

IXTH1N250

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 1.5A (Tc) - 40Ohm @ 750mA, 10V 4V @ 250µA 41 nC @ 10 V - 1660 pF @ 25 V - - - Through Hole
IXKN45N80C

IXKN45N80C

MOSFET N-CH 800V 44A SOT-227B

IXYS
2,377 -

RFQ

IXKN45N80C

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 74mOhm @ 44A, 10V 3.9V @ 4mA 360 nC @ 10 V ±20V - Super Junction 380W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN120P20T

IXTN120P20T

MOSFET P-CH 200V 106A SOT227B

IXYS
3,266 -

RFQ

IXTN120P20T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 106A (Tc) 10V 30mOhm @ 60A, 10V 4.5V @ 250µA 740 nC @ 10 V ±15V 73000 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTK400N15X4

IXTK400N15X4

MOSFET N-CH 150V 400A TO264

IXYS
2,579 -

RFQ

IXTK400N15X4

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 3.1mOhm @ 100A, 10V 4.5V @ 1mA 430 nC @ 10 V ±20V 14500 pF @ 25 V - 1500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTN240N075L2

IXTN240N075L2

MOSFET N-CH 75V 225A SOT227B

IXYS
2,417 -

RFQ

IXTN240N075L2

Технические

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 225A (Tc) 10V 7mOhm @ 120A, 10V 4.5V @ 3mA 546 nC @ 10 V ±20V 19000 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX1R4N450HV

IXTX1R4N450HV

MOSFET N-CH 4500V 1.4A TO247PLUS

IXYS
2,670 -

RFQ

IXTX1R4N450HV

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 4500 V 1.4A (Tc) 10V 40Ohm @ 50mA, 10V 6V @ 250µA 88 nC @ 10 V ±20V 3300 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH80N30P3

IXFH80N30P3

MOSFET N-CH 300V 80A TO-247

IXYS
3,847 -

RFQ

Tube HiPerFET™, Polar3™ Active - - - - - - - - - - - - - -
IXFN40N110Q3

IXFN40N110Q3

MOSFET N-CH 1100V 35A SOT-227B

IXYS
3,652 -

RFQ

IXFN40N110Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1100 V 35A (Tc) 10V 260mOhm @ 20A, 10V 6.5V @ 8mA 300 nC @ 10 V ±30V 14000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN64N50PD3

IXFN64N50PD3

MOSFET N-CH 500V 50A SOT227B

IXYS
2,721 -

RFQ

IXFN64N50PD3

Технические

Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 85mOhm @ 32A, 10V 5V @ 8mA 186 nC @ 10 V ±30V 11000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFT80N30P3

IXFT80N30P3

MOSFET N-CH 300V 80A TO-268

IXYS
2,649 -

RFQ

Tube HiPerFET™, Polar3™ Active - - - - - - - - - - - - - -
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