Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFT88N28P

IXFT88N28P

MOSFET N-CH 280V 88A TO268

IXYS
3,081 -

RFQ

Tube HiPerFET™, Polar Active - - - - - - - - - - - - - -
IXTA3N100D2

IXTA3N100D2

MOSFET N-CH 1000V 3A TO263

IXYS
3,138 -

RFQ

IXTA3N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) - 5.5Ohm @ 1.5A, 0V - 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA26P20P

IXTA26P20P

MOSFET P-CH 200V 26A TO263

IXYS
1,540 -

RFQ

IXTA26P20P

Технические

Tube Polar Active P-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 170mOhm @ 13A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2740 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP76P10T

IXTP76P10T

MOSFET P-CH 100V 76A TO220AB

IXYS
9,338 -

RFQ

IXTP76P10T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 25mOhm @ 38A, 10V 4V @ 250µA 197 nC @ 10 V ±15V 13700 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA44P15T

IXTA44P15T

MOSFET P-CH 150V 44A TO263

IXYS
1,050 -

RFQ

IXTA44P15T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 22A, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP180N10T

IXTP180N10T

MOSFET N-CH 100V 180A TO220AB

IXYS
780 -

RFQ

IXTP180N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±30V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP140P05T

IXTP140P05T

MOSFET P-CH 50V 140A TO220AB

IXYS
1,494 -

RFQ

IXTP140P05T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 140A (Tc) 10V 9mOhm @ 70A, 10V 4V @ 250µA 200 nC @ 10 V ±15V 13500 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA96P085T

IXTA96P085T

MOSFET P-CH 85V 96A TO263

IXYS
3,395 -

RFQ

IXTA96P085T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 85 V 96A (Tc) 10V 13mOhm @ 48A, 10V 4V @ 250µA 180 nC @ 10 V ±15V 13100 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH60N50P3

IXFH60N50P3

MOSFET N-CH 500V 60A TO247AD

IXYS
4,200 -

RFQ

IXFH60N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 5V @ 4mA 96 nC @ 10 V ±30V 6250 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH50N20

IXFH50N20

MOSFET N-CH 200V 50A TO247AD

IXYS
2,136 -

RFQ

IXFH50N20

Технические

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 45mOhm @ 25A, 10V 4V @ 4mA 220 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH15N50L2

IXTH15N50L2

MOSFET N-CH 500V 15A TO247

IXYS
813 -

RFQ

IXTH15N50L2

Технические

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4.5V @ 250µA 123 nC @ 10 V ±20V 4080 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH340N075T2

IXFH340N075T2

MOSFET N-CH 75V 340A TO247AD

IXYS
306 -

RFQ

IXFH340N075T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 340A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 3mA 300 nC @ 10 V ±20V 19000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH50N30Q3

IXFH50N30Q3

MOSFET N-CH 300V 50A TO247AD

IXYS
2,992 -

RFQ

IXFH50N30Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 80mOhm @ 25A, 10V 6.5V @ 4mA 65 nC @ 10 V ±20V 3160 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT120N25X3HV

IXFT120N25X3HV

MOSFET N-CH 250V 120A TO268HV

IXYS
1,057 -

RFQ

IXFT120N25X3HV

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 12mOhm @ 60A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7870 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH30N60L2

IXTH30N60L2

MOSFET N-CH 600V 30A TO247

IXYS
916 -

RFQ

IXTH30N60L2

Технические

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 4.5V @ 250µA 335 nC @ 10 V ±20V 10700 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH16N120P

IXFH16N120P

MOSFET N-CH 1200V 16A TO247AD

IXYS
680 -

RFQ

IXFH16N120P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 950mOhm @ 8A, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT80N20L

IXTT80N20L

MOSFET N-CH 200V 80A TO268

IXYS
580 -

RFQ

IXTT80N20L

Технические

Tube Linear Active N-Channel MOSFET (Metal Oxide) 200 V 80A (Tc) 10V 32mOhm @ 40A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 6160 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFK44N80P

IXFK44N80P

MOSFET N-CH 800V 44A TO264AA

IXYS
600 -

RFQ

IXFK44N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 5V @ 8mA 198 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX32P60P

IXTX32P60P

MOSFET P-CH 600V 32A PLUS247-3

IXYS
298 -

RFQ

IXTX32P60P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 350mOhm @ 16A, 10V 4V @ 1mA 196 nC @ 10 V ±20V 11100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT220N20X3HV

IXFT220N20X3HV

MOSFET N-CH 200V 220A TO268HV

IXYS
1,696 -

RFQ

IXFT220N20X3HV

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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