Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFQ20N50P3

IXFQ20N50P3

MOSFET N-CH 500V 20A TO3P

IXYS
298 -

RFQ

IXFQ20N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA34N65X2-TRL

IXTA34N65X2-TRL

MOSFET N-CH 650V 34A TO263

IXYS
2,790 -

RFQ

Tape & Reel (TR) Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 96mOhm @ 17A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 3000 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA10N80P

IXFA10N80P

MOSFET N-CH 800V 10A TO263

IXYS
2,165 -

RFQ

IXFA10N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP2N100

IXTP2N100

MOSFET N-CH 1000V 2A TO220AB

IXYS
250 -

RFQ

IXTP2N100

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7Ohm @ 1A, 10V 4.5V @ 250µA 40 nC @ 10 V ±20V 825 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH450P2

IXTH450P2

MOSFET N-CH 500V 16A TO247

IXYS
122 -

RFQ

IXTH450P2

Технические

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 330mOhm @ 8A, 10V 4.5V @ 250µA 43 nC @ 10 V ±30V 2530 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA160N10T

IXTA160N10T

MOSFET N-CH 100V 160A TO263

IXYS
2,049 -

RFQ

IXTA160N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 10V 7mOhm @ 25A, 10V 4.5V @ 250µA 132 nC @ 10 V ±30V 6600 pF @ 25 V - 430W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFP24N60X

IXFP24N60X

MOSFET N-CH 600V 24A TO220AB

IXYS
2,153 -

RFQ

IXFP24N60X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA260N055T2

IXTA260N055T2

MOSFET N-CH 55V 260A TO263

IXYS
3,351 -

RFQ

IXTA260N055T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH12N80P

IXFH12N80P

MOSFET N-CH 800V 12A TO247AD

IXYS
3,317 -

RFQ

IXFH12N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 850mOhm @ 500mA, 10V 5.5V @ 2.5mA 51 nC @ 10 V ±30V 2800 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP24N65X2M

IXTP24N65X2M

MOSFET N-CH 650V 24A TO220

IXYS
2,825 -

RFQ

IXTP24N65X2M

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP7N100P

IXFP7N100P

MOSFET N-CH 1000V 7A TO220AB

IXYS
3,547 -

RFQ

IXFP7N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP300N04T2

IXTP300N04T2

MOSFET N-CH 40V 300A TO220AB

IXYS
200 -

RFQ

IXTP300N04T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 2.5mOhm @ 500mA, 10V 4V @ 250µA 145 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP4N100PM

IXFP4N100PM

MOSFET N-CH 1000V 2.1A TO220

IXYS
2,404 -

RFQ

IXFP4N100PM

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2.1A (Tc) 10V 3.3Ohm @ 2A, 10V 6V @ 250µA 26 nC @ 10 V ±20V 1456 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA160N10T7

IXTA160N10T7

MOSFET N-CH 100V 160A TO263-7

IXYS
2,248 -

RFQ

IXTA160N10T7

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 10V 7mOhm @ 25A, 10V 4.5V @ 1mA 132 nC @ 10 V ±30V 6600 pF @ 25 V - 430W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP75N10P

IXTP75N10P

MOSFET N-CH 100V 75A TO220AB

IXYS
2,135 -

RFQ

IXTP75N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 25mOhm @ 500mA, 10V 5.5V @ 250µA 74 nC @ 10 V ±20V 2250 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA05N100HV

IXTA05N100HV

MOSFET N-CH 1000V 750MA TO263

IXYS
2,760 -

RFQ

IXTA05N100HV

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 750mA (Tc) 10V 17Ohm @ 375mA, 10V 4.5V @ 250µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA24N60X

IXFA24N60X

MOSFET N-CH 600V 24A TO263AA

IXYS
3,395 -

RFQ

IXFA24N60X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP30N60X

IXFP30N60X

MOSFET N-CH 600V 30A TO220

IXYS
3,777 -

RFQ

IXFP30N60X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 155mOhm @ 15A, 10V 4.5V @ 4mA 56 nC @ 10 V ±30V 2270 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP140N055T2

IXTP140N055T2

MOSFET N-CH 55V 140A TO220AB

IXYS
3,447 -

RFQ

IXTP140N055T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 140A (Tc) 10V 5.4mOhm @ 50A, 10V 4V @ 250µA 82 nC @ 10 V ±20V 4760 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP34N65X2M

IXFP34N65X2M

MOSFET N-CH 650V 34A TO220

IXYS
2,166 -

RFQ

IXFP34N65X2M

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 100mOhm @ 17A, 10V 5V @ 1.5mA 56 nC @ 10 V ±30V 3230 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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