Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFA20N85XHV-TRL

IXFA20N85XHV-TRL

MOSFET N-CH 850V 20A TO263HV

IXYS
2,878 -

RFQ

Tape & Reel (TR) HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 20A (Tc) 10V 330mOhm @ 10A, 10V 5.5V @ 2.5mA 63 nC @ 10 V ±30V 1660 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA16N60P3

IXFA16N60P3

MOSFET N-CH 600V 16A TO263

IXYS
2,017 -

RFQ

IXFA16N60P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 440mOhm @ 8A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1830 pF @ 25 V - 347W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA230N075T2

IXFA230N075T2

MOSFET N-CH 75V 230A TO263

IXYS
3,744 -

RFQ

IXFA230N075T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 1mA 178 nC @ 10 V - 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA8N85XHV

IXFA8N85XHV

MOSFET N-CH 850V 8A TO263HV

IXYS
2,572 -

RFQ

IXFA8N85XHV

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 654 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA140N12T2

IXTA140N12T2

MOSFET N-CH 120V 140A TO263

IXYS
2,513 -

RFQ

IXTA140N12T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 120 V 140A (Tc) 10V 10mOhm @ 70A, 10V 4.5V @ 250µA 174 nC @ 10 V ±20V 9700 pF @ 25 V - 577W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFP14N55X2

IXFP14N55X2

IXFP14N55X2

IXYS
2,846 -

RFQ

Tube HiPerFET™, Ultra X2 Active - - - - - - - - - - - - - -
IXTQ96N25T

IXTQ96N25T

MOSFET N-CH 250V 96A TO3P

IXYS
2,918 -

RFQ

IXTQ96N25T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 96A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 114 nC @ 10 V ±30V 6100 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP32N65X

IXTP32N65X

MOSFET N-CH 650V 32A TO220-3

IXYS
2,517 -

RFQ

IXTP32N65X

Технические

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 135mOhm @ 16A, 10V 5.5V @ 250µA 54 nC @ 10 V ±30V 2205 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP102N15T

IXFP102N15T

MOSFET N-CH 150V 102A TO220AB

IXYS
3,832 -

RFQ

IXFP102N15T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 150 V 102A (Tc) 10V 18mOhm @ 500mA, 10V 5V @ 1mA 87 nC @ 10 V ±20V 5220 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ86N20T

IXTQ86N20T

MOSFET N-CH 200V 86A TO3P

IXYS
3,862 -

RFQ

IXTQ86N20T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 90 nC @ 10 V ±30V 4500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFQ24N60X

IXFQ24N60X

MOSFET N-CH 600V 24A TO3P

IXYS
3,614 -

RFQ

IXFQ24N60X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP32N65XM

IXTP32N65XM

MOSFET N-CH 650V 14A TO220-3

IXYS
2,483 -

RFQ

IXTP32N65XM

Технические

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 135mOhm @ 16A, 10V 5.5V @ 250µA 54 nC @ 10 V ±30V 2206 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP14N55X2M

IXFP14N55X2M

IXFP14N55X2M

IXYS
2,408 -

RFQ

Tube HiPerFET™, Ultra X2 Active - - - - - - - - - - - - - -
IXTH460P2

IXTH460P2

MOSFET N-CH 500V 24A TO247

IXYS
3,326 -

RFQ

IXTH460P2

Технические

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 270mOhm @ 12A, 10V 4.5V @ 250µA 48 nC @ 10 V ±30V 2890 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA32P20T-TRL

IXTA32P20T-TRL

MOSFET P-CH 200V 32A TO263

IXYS
3,405 -

RFQ

Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP20N65X

IXTP20N65X

MOSFET N-CH 650V 20A TO220

IXYS
3,949 -

RFQ

IXTP20N65X

Технические

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5.5V @ 250µA 35 nC @ 10 V ±30V 1390 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA3N120-TRL

IXFA3N120-TRL

MOSFET N-CH 1200V 3A TO263

IXYS
3,623 -

RFQ

IXFA3N120-TRL

Технические

Tape & Reel (TR),Cut Tape (CT) HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT52N30P

IXTT52N30P

MOSFET N-CH 300V 52A TO268

IXYS
3,866 -

RFQ

IXTT52N30P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA20N65X-TRL

IXTA20N65X-TRL

MOSFET N-CH 650V 20A TO263

IXYS
2,292 -

RFQ

Tape & Reel (TR) Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5.5V @ 250µA 35 nC @ 10 V ±30V 1390 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX32N100Q3

IXFX32N100Q3

MOSFET N-CH 1000V 32A PLUS247-3

IXYS
250 -

RFQ

IXFX32N100Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь