Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFP270N06T3

IXFP270N06T3

MOSFET N-CH 60V 270A TO220AB

IXYS
2,203 -

RFQ

IXFP270N06T3

Технические

Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 270A (Tc) 10V 3.1mOhm @ 100A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 12600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA6N100D2-TRL

IXTA6N100D2-TRL

MOSFET N-CH 1000V 6A TO263

IXYS
2,774 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tj) 0V 2.2Ohm @ 3A, 0V 4.5V @ 250µA 95 nC @ 5 V ±20V 2650 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP110N15T2

IXFP110N15T2

MOSFET N-CH 150V 110A TO220AB

IXYS
3,261 -

RFQ

IXFP110N15T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 110A (Tc) 10V 13mOhm @ 55A, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 8600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP12N50PM

IXTP12N50PM

MOSFET N-CH 500V 6A TO220AB

IXYS
3,985 -

RFQ

IXTP12N50PM

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N120HV-TRL

IXTA3N120HV-TRL

MOSFET N-CH 1200V 3A TO263HV

IXYS
3,684 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1100 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ18N60P

IXTQ18N60P

MOSFET N-CH 600V 18A TO3P

IXYS
2,061 -

RFQ

IXTQ18N60P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 420mOhm @ 9A, 10V 5.5V @ 250µA 49 nC @ 10 V ±30V 2500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKP24N60C5

IXKP24N60C5

MOSFET N-CH 600V 24A TO220AB

IXYS
2,835 -

RFQ

IXKP24N60C5

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXFP7N80PM

IXFP7N80PM

MOSFET N-CH 800V 3.5A TO220AB

IXYS
3,461 -

RFQ

IXFP7N80PM

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 3.5A (Tc) 10V 1.44Ohm @ 3.5A, 10V 5V @ 1mA 32 nC @ 10 V ±30V 1890 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH150N15P

IXFH150N15P

MOSFET N-CH 150V 150A TO247AD

IXYS
197 -

RFQ

IXFH150N15P

Технические

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 13mOhm @ 500mA, 10V 5V @ 4mA 190 nC @ 10 V ±20V 5800 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXKH47N60C

IXKH47N60C

MOSFET N-CH 600V 47A TO247AD

IXYS
290 -

RFQ

IXKH47N60C

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 30A, 10V 4V @ 2mA 650 nC @ 10 V ±20V - Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXFK32N80Q3

IXFK32N80Q3

MOSFET N-CH 800V 32A TO264AA

IXYS
450 -

RFQ

IXFK32N80Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 32A (Tc) 10V 270mOhm @ 16A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 6940 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX32N80Q3

IXFX32N80Q3

MOSFET N-CH 800V 32A PLUS247-3

IXYS
938 -

RFQ

IXFX32N80Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 32A (Tc) 10V 270mOhm @ 16A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 6940 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT78N60X3HV

IXFT78N60X3HV

MOSFET ULTRA 600V 78A TO268HV

IXYS
3,719 -

RFQ

IXFT78N60X3HV

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 78A (Tc) 10V 38mOhm @ 39A, 10V 5V @ 4mA 70 nC @ 10 V ±20V 4700 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH46N30T

IXFH46N30T

MOSFET N-CH 300V 46A TO247

IXYS
3,536 -

RFQ

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 46A (Tc) 10V 80mOhm @ 23A, 10V 5V @ 4mA 86 nC @ 10 V ±20V 4770 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA2N100

IXTA2N100

MOSFET N-CH 1000V 2A TO263

IXYS
3,971 -

RFQ

IXTA2N100

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7Ohm @ 1A, 10V 4.5V @ 250µA 18 nC @ 10 V ±20V 825 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ160N10T

IXTQ160N10T

MOSFET N-CH 100V 160A TO3P

IXYS
3,861 -

RFQ

IXTQ160N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 10V 7mOhm @ 25A, 10V 4.5V @ 250µA 132 nC @ 10 V ±30V 6600 pF @ 25 V - 430W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA36N30P3

IXFA36N30P3

MOSFET N-CH 300V 36A TO263AA

IXYS
2,747 -

RFQ

IXFA36N30P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 30 nC @ 10 V ±20V 2040 pF @ 25 V - 347W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA76N25T

IXTA76N25T

MOSFET N-CH 250V 76A TO263

IXYS
3,639 -

RFQ

IXTA76N25T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 76A (Tc) 10V 39mOhm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 4500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA3N120-TRR

IXTA3N120-TRR

MOSFET N-CH 1200V 3A TO263

IXYS
2,428 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1350 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP5N100P

IXFP5N100P

MOSFET N-CH 1000V 5A TO220AB

IXYS
3,655 -

RFQ

IXFP5N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 5A (Tc) 10V 2.8Ohm @ 500mA, 10V 6V @ 250µA 33.4 nC @ 10 V ±30V 1830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
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