Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF13N06L

FQPF13N06L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,468 -

RFQ

FQPF13N06L

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 5V, 10V 110mOhm @ 5A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 24W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF7N65C

FQPF7N65C

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,622 -

RFQ

FQPF7N65C

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC86520L

FDMC86520L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,066 -

RFQ

FDMC86520L

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 13.5A (Ta), 22A (Tc) 4.5V, 10V 7.9mOhm @ 13.5A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 4550 pF @ 30 V - 2.3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDBL0210N80

FDBL0210N80

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,007 -

RFQ

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 10V 2mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10 pF @ 40 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FQD4P40TM

FQD4P40TM

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,167 -

RFQ

FQD4P40TM

Технические

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 400 V 2.7A (Tc) 10V 3.1Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 680 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD4141

FDD4141

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
3,107 -

RFQ

FDD4141

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 40 V 10.8A (Ta), 50A (Tc) 4.5V, 10V 12.3mOhm @ 12.7A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 2775 pF @ 20 V - 2.4W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD5690

FDD5690

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,536 -

RFQ

FDD5690

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 6V, 10V 27mOhm @ 9A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1110 pF @ 25 V - 3.2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF16N50

FDPF16N50

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,228 -

RFQ

FDPF16N50

Технические

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH125N60E

FCH125N60E

MOSFET N-CH 600V 29A TO247-3

Fairchild Semiconductor
3,350 -

RFQ

FCH125N60E

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 250µA 95 nC @ 10 V ±20V 2990 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF850N80Z

FCPF850N80Z

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,205 -

RFQ

FCPF850N80Z

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS138K

BSS138K

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,673 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 220mA (Ta) 1.8V, 2.5V 1.6Ohm @ 50mA, 5V 1.2V @ 250µA 2.4 nC @ 10 V ±12V 58 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDBL0090N40

FDBL0090N40

MOSFET N-CH 40V 240A 8HPSOF

Fairchild Semiconductor
2,852 -

RFQ

FDBL0090N40

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.9mOhm @ 80A, 10V 4V @ 250µA 188 nC @ 10 V ±20V 12000 pF @ 25 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDN304P

FDN304P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,997 -

RFQ

FDN304P

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 1.8V, 4.5V 52mOhm @ 2.4A, 4.5V 1.5V @ 250µA 20 nC @ 4.5 V ±8V 1312 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6670AS

FDS6670AS

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,167 -

RFQ

FDS6670AS

Технические

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta) 4.5V, 10V 9mOhm @ 13.5A, 10V 3V @ 1mA 38 nC @ 10 V ±20V 1540 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6690AS

FDS6690AS

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,964 -

RFQ

FDS6690AS

Технические

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 12mOhm @ 10A, 10V 3V @ 1mA 23 nC @ 10 V ±20V 910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQT7N10LTF

FQT7N10LTF

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,943 -

RFQ

FQT7N10LTF

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 1.7A (Tc) 5V, 10V 350mOhm @ 850mA, 10V 2V @ 250µA 6 nC @ 5 V ±20V 290 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDC658AP

FDC658AP

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,820 -

RFQ

FDC658AP

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 50mOhm @ 4A, 10V 3V @ 250µA 8.1 nC @ 5 V ±25V 470 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS9400A

FDS9400A

MOSFET P-CH 30V 3.4A 8SOIC

Fairchild Semiconductor
2,273 -

RFQ

FDS9400A

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 3.4A (Ta) 4.5V, 10V 130mOhm @ 1A, 10V 3V @ 250µA 3.5 nC @ 5 V ±25V 205 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDB0250N807L

FDB0250N807L

MOSFET N-CH 80V 240A TO263-7

Fairchild Semiconductor
3,777 -

RFQ

FDB0250N807L

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 8V, 10V 2.2mOhm @ 30A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 15400 pF @ 40 V - 3.8W (Ta), 214W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDN360P

FDN360P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,781 -

RFQ

FDN360P

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 80mOhm @ 2A, 10V 3V @ 250µA 9 nC @ 10 V ±20V 298 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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