Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP8870

FDP8870

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,687 -

RFQ

FDP8870

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 156A (Tc) 4.5V, 10V 4.1mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP254BFP001

IRFP254BFP001

25A, 250V, 0.14OHM, N-CHANNEL PO

Fairchild Semiconductor
3,106 -

RFQ

IRFP254BFP001

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 140mOhm @ 12.5A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 221W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS3692

FDS3692

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,606 -

RFQ

FDS3692

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) 6V, 10V 60mOhm @ 4.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 746 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDBL86563-F085

FDBL86563-F085

MOSFET N-CH 60V 240A 8HPSOF

Fairchild Semiconductor
2,380 -

RFQ

FDBL86563-F085

Технические

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDS3580

FDS3580

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,780 -

RFQ

FDS3580

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 7.6A (Ta) 6V, 10V 29mOhm @ 7.6A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQNL2N50BTA

FQNL2N50BTA

POWER FIELD-EFFECT TRANSISTOR, 0

Fairchild Semiconductor
3,761 -

RFQ

FQNL2N50BTA

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 350mA (Tc) 10V 5.3Ohm @ 175mA, 10V 3.7V @ 250µA 8 nC @ 10 V ±30V 230 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB016N04AL7

FDB016N04AL7

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,056 -

RFQ

FDB016N04AL7

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 80A, 10V 3V @ 250µA 167 nC @ 10 V ±20V 11600 pF @ 25 V - 283W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF035N06B_F152

FDPF035N06B_F152

MOSFET N-CH 60V 88A TO220F-3

Fairchild Semiconductor
2,650 -

RFQ

FDPF035N06B_F152

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 88A (Tc) - 3.5mOhm @ 88A, 10V 4V @ 250µA 99 nC @ 10 V ±20V 8030 pF @ 30 V - 46.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI4435DY

SI4435DY

MOSFET P-CH 30V 8A 8SO

Fairchild Semiconductor
3,384 -

RFQ

SI4435DY

Технические

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQA65N20

FQA65N20

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
2,148 -

RFQ

FQA65N20

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 32mOhm @ 32.5A, 10V 5V @ 250µA 200 nC @ 10 V ±30V 7900 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB4N80TM

FQB4N80TM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,512 -

RFQ

FQB4N80TM

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6699S

FDS6699S

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,988 -

RFQ

FDS6699S

Технические

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.6mOhm @ 21A, 10V 3V @ 1mA 91 nC @ 10 V ±20V 3610 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDM3622

FDM3622

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,273 -

RFQ

FDM3622

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4.4A (Ta) 6V, 10V 60mOhm @ 4.4A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 1090 pF @ 25 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8296

FDMC8296

MOSFET N-CH 30V 12A/18A 8MLP

Fairchild Semiconductor
3,845 -

RFQ

FDMC8296

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 18A (Tc) 4.5V, 10V 8mOhm @ 12A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1385 pF @ 15 V - 2.3W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD20N06TM

FQD20N06TM

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,722 -

RFQ

FQD20N06TM

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 16.8A (Tc) 10V 63mOhm @ 8.4A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP8P10

FQP8P10

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,844 -

RFQ

FQP8P10

Технические

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 530mOhm @ 4A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS0309AS

FDMS0309AS

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,213 -

RFQ

FDMS0309AS

Технические

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 49A (Tc) 4.5V, 10V 3.5mOhm @ 21A, 10V 3V @ 1mA 47 nC @ 10 V ±20V 3000 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDU3N40TU

FDU3N40TU

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,786 -

RFQ

FDU3N40TU

Технические

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 5V @ 250µA 6 nC @ 10 V ±30V 225 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB3672-F085

FDB3672-F085

MOSFET N-CH 100V 7.2A/44A TO263

Fairchild Semiconductor
3,290 -

RFQ

FDB3672-F085

Технические

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Ta), 44A (Tc) 6V, 10V 28mOhm @ 44A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 1710 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS8020

FDMS8020

MOSFET N-CH 30V 26A/42A 8PQFN

Fairchild Semiconductor
2,592 -

RFQ

FDMS8020

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 42A (Tc) 4.5V, 10V 2.5mOhm @ 26A, 10V 3V @ 250µA 61 nC @ 10 V ±20V 3800 pF @ 15 V - 2.5W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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