Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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FDN339ANSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
3,011 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 35mOhm @ 3A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | ±8V | 700 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDB0260N1007LMOSFET N-CH 100V 200A TO263-7 Fairchild Semiconductor |
2,890 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 2.6mOhm @ 27A, 10V | 4V @ 250µA | 118 nC @ 10 V | ±20V | 8545 pF @ 50 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQU12N20TUMOSFET N-CH 200V 9A I-PAK Fairchild Semiconductor |
3,817 | - |
RFQ |
![]() Технические |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 280mOhm @ 4.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDD3680POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
2,507 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Ta) | 6V, 10V | 46mOhm @ 6.1A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±20V | 1735 pF @ 50 V | - | 68W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDP55N06POWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor |
3,663 | - |
RFQ |
![]() Технические |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 55A (Tc) | 10V | 22mOhm @ 27.5A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±25V | 1510 pF @ 25 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDPF15N65POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
3,038 | - |
RFQ |
![]() Технические |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 440mOhm @ 7.5A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 3095 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BS170-D26ZSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
2,203 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 40 pF @ 10 V | - | 830mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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FCH067N65S3-F155POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor |
3,690 | - |
RFQ |
![]() Технические |
Bulk | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 44A (Tc) | 10V | 67mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78 nC @ 10 V | ±30V | 3090 pF @ 400 V | Super Junction | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FQU2N60CTUPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
3,784 | - |
RFQ |
![]() Технические |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.9A (Tc) | 10V | 4.7Ohm @ 950mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±30V | 235 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDD3670POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
3,669 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Ta) | 6V, 10V | 32mOhm @ 7.3A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 2490 pF @ 50 V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDD850N10LPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
2,996 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15.7A (Tc) | 5V, 10V | 75mOhm @ 12A, 10V | 2.5V @ 250µA | 28.9 nC @ 10 V | ±20V | 1465 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFM120ATFPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
3,973 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.3A (Ta) | 10V | 200mOhm @ 1.15A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 480 pF @ 25 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDMS7578MOSFET N-CH 25V 17A/28A 8PQFN Fairchild Semiconductor |
2,855 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 17A (Ta), 28A (Tc) | 4.5V, 10V | 5.8mOhm @ 17A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 1625 pF @ 13 V | - | 2.5W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDH50N50_F133MOSFET N-CH 500V 48A TO247 Fairchild Semiconductor |
2,969 | - |
RFQ |
![]() Технические |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | - | 105mOhm @ 24A, 10V | 5V @ 250µA | 137 nC @ 10 V | ±20V | 6460 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDPF770N15APOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
2,278 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Tc) | 10V | 77mOhm @ 10A, 10V | 4V @ 250µA | 11.2 nC @ 10 V | ±20V | 765 pF @ 75 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDMC2512SDCPOWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
3,500 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 2.5V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 3W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDMS0300SMOSFET N-CH 30V 31A/49A 8PQFN Fairchild Semiconductor |
2,037 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 31A (Ta), 49A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 3V @ 1mA | 133 nC @ 10 V | ±20V | 8705 pF @ 15 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDY100PZSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
2,771 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 350mA (Ta) | 1.8V, 4.5V | 1.2Ohm @ 350mA, 4.5V | 1.5V @ 250µA | 1.4 nC @ 4.5 V | ±8V | 100 pF @ 10 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDMA8051LSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
3,688 | - |
RFQ |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 3V @ 250µA | 20 nC @ 10 V | ±20V | 1260 pF @ 20 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
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FDD5670POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
2,050 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 52A (Ta) | 6V, 10V | 15mOhm @ 10A, 10V | 4V @ 250µA | 73 nC @ 10 V | ±20V | 2739 pF @ 15 V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |