Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RF1S17N06LSMLOGIC LEVEL GATE (5V) DEVICE Harris Corporation |
4,000 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A | - | - | - | - | - | - | - | - | - | Surface Mount |
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RF1S25N06SMN-CHANNEL POWER MOSFET Harris Corporation |
3,005 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A | - | - | - | - | - | - | - | - | - | Surface Mount |
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IRF9510MOSFET P-CH 100V 4A TO220AB Harris Corporation |
2,685 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RFD16N03LSM9AN-CHANNEL POWER MOSFET Harris Corporation |
1,540 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RF1S15N08LLOGIC LEVEL GATE (5V) DEVICE Harris Corporation |
800 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 45A | - | - | - | - | - | - | - | - | - | Surface Mount |
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IRFR9110MOSFET P-CH 100V 3.1A DPAK Harris Corporation |
554 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.1A (Tc) | - | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RFP2N15N-CHANNEL, MOSFET Harris Corporation |
2,411 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 2A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S25N06SM9AN-CHANNEL POWER MOSFET Harris Corporation |
4,000 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RF1S23N06LESM9AN-CHANNEL POWER MOSFET Harris Corporation |
800 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFP45N06LEN-CHANNEL POWER MOSFET Harris Corporation |
1,569 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 5V | 28mOhm @ 45A, 5V | 2V @ 250µA | 135 nC @ 10 V | ±10V | 2150 pF @ 25 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RF1S23N06LE23A, 60V, 0.065OHM, N-CHANNEL Harris Corporation |
2,400 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23A (Tc) | 5V | 65mOhm @ 23A, 5V | 2V @ 250µA | 48 nC @ 10 V | ±10V | 850 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | |
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IRF643N-CHANNEL POWER MOSFET Harris Corporation |
3,050 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 16A (Tc) | 10V | 220mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF543N-CHANNEL POWER MOSFET Harris Corporation |
965 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 25A (Tc) | 10V | 100mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF631N-CHANNEL POWER MOSFET Harris Corporation |
5,221 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Tc) | 10V | 400mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S22N10SMN-CHANNEL POWER MOSFET Harris Corporation |
3,853 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A | - | - | - | - | - | - | - | - | - | Surface Mount |
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IRF9522P-CHANNEL POWER MOSFET Harris Corporation |
1,768 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 5A (Tc) | 10V | 800mOhm @ 3.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RLD03N06CLESMN-CHANNEL POWER MOSFET Harris Corporation |
1,025 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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RFD20N03SM9AN-CHANNEL POWER MOSFET Harris Corporation |
4,911 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 25mOhm @ 20A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1150 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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RF1S42N03L42A, 30V, 0.025 OHMS, N-CHANNEL Harris Corporation |
400 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Tc) | 5V | 25mOhm @ 42A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1650 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF642N-CHANNEL POWER MOSFET Harris Corporation |
6,533 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 220mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |