Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFH30N15N-CHANNEL POWER MOSFET Harris Corporation |
1,417 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 30A (Tc) | 10V | 75mOhm @ 15A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFA100N05EN-CHANNEL POWER MOSFET Harris Corporation |
1,544 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 100A (Tc) | 10V | 8mOhm @ 100A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RFG75N05EN-CHANNEL POWER MOSFET Harris Corporation |
18,695 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 400 nC @ 20 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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2N6792TX2A, 400V, 1.8OHM, N-CHANNEL Harris Corporation |
335 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 1.8Ohm @ 1.25A, 10V | 4V @ 1mA | - | ±20V | 600 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S25N0625A, 60V, 0.047 OHM, N-CHANNEL P Harris Corporation |
2,860 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 10V | 47mOhm @ 25A, 10V | 4V @ 250µA | 80 nC @ 20 V | ±20V | 975 pF @ 25 V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFP350MOSFET N-CH 400V 16A TO247-3 Harris Corporation |
3,837 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFF91306.5A, 100V, 0.3OHM, P-CHANNEL MO Harris Corporation |
3,004 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.5A (Tc) | 10V | 300mOhm @ 3A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFD8P06LE8A, 60V, 0.33OHM, P-CHANNEL POWE Harris Corporation |
3,211 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RF1K4909396RF1K4909396 - POWER FIELD-EFFECT Harris Corporation |
2,109 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RF1K4909096RF1K4909096 - POWER FIELD-EFFECT Harris Corporation |
2,395 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFP40N10LE40A, 100V, 0.04OHM, N-CHANNEL PO Harris Corporation |
3,960 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RF1S9640SM9A11A, 200V, 0.5OHM, P-CHANNEL POW Harris Corporation |
3,435 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RF1S530SM9A14A, 100V, 0.16OHM, N-CHANNEL PO Harris Corporation |
3,791 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HP4936DYPOWER FIELD-EFFECT TRANSISTOR, 5 Harris Corporation |
2,080 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HUF76113T3ST4.7 A, 30 V, 0.031 OHM, N-CHANNE Harris Corporation |
2,435 | - |
RFQ |
![]() Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |