Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFD16N03LSMN-CHANNEL POWER MOSFET Harris Corporation |
2,057 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A | - | - | - | - | - | - | - | - | - | Surface Mount |
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RFP10P12P-CHANNEL POWER MOSFET Harris Corporation |
300 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 10A (Tc) | 10V | 500mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | 1700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP7N35N-CHANNEL POWER MOSFET Harris Corporation |
1,200 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 7A (Tc) | 10V | 750mOhm @ 3.5A, 10V | 4V @ 1mA | - | ±20V | 1600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFF211N-CHANNEL POWER MOSFET Harris Corporation |
1,043 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 2.2A (Tc) | 10V | 1.5Ohm @ 1.25A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 15W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFF221N-CHANNEL POWER MOSFET Harris Corporation |
650 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.5A (Tc) | 10V | 800mOhm @ 2A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S54028A, 100V, 0.077 OHM, N-CHANNEL Harris Corporation |
4,101 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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HUF76139S3N-CHANNEL POWER MOSFET Harris Corporation |
800 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 7.5mOhm @ 75A, 10V | 3V @ 250µA | 78 nC @ 10 V | ±16V | 2700 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RFG40N10LEN-CHANNEL POWER MOSFET Harris Corporation |
489 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IRFD3100.4A 400V 3.600 OHM N-CHANNEL Harris Corporation |
3,189 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 350mA (Ta) | 10V | 3.6Ohm @ 210mA, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S9640MOSFET P-CH 200V 11A TO220AB Harris Corporation |
4,500 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | - | 500mOhm @ 6A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF831N-CHANNEL POWER MOSFET Harris Corporation |
1,610 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP7N40N-CHANNEL POWER MOSFET Harris Corporation |
471 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 7A (Tc) | 10V | 750mOhm @ 3.5A, 10V | 4V @ 1mA | - | ±20V | 1600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP141N-CHANNEL POWER MOSFET Harris Corporation |
288 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 31A (Tc) | 10V | 77mOhm @ 19A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFPC423.9A, 1000V, 4.2 OHM, N-CHANNEL Harris Corporation |
5,701 | - |
RFQ |
![]() Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.9A (Tc) | 10V | 1.6Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S40N10SMN-CHANNEL POWER MOSFET Harris Corporation |
3,245 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A | - | - | - | - | - | - | - | - | - | Surface Mount |
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IRFPC406.8A 600V 1.200 OHM N-CHANNEL Harris Corporation |
968 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP341N-CHANNEL POWER MOSFET Harris Corporation |
233 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 11A (Tc) | 10V | 550mOhm @ 5.5A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUZ41AN-CHANNEL POWER MOSFET Harris Corporation |
7,258 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 4V @ 1mA | - | ±20V | 2000 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP70N03MOSFET N-CH 30V 70A TO220-3 Harris Corporation |
5,567 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | - | 10mOhm @ 70A, 10V | 4V @ 250µA | 260 nC @ 20 V | - | 3300 pF @ 25 V | - | - | - | Through Hole |
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IRF731N-CHANNEL POWER MOSFET Harris Corporation |
4,369 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 5.5A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |