Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFD16N03LSM

RFD16N03LSM

N-CHANNEL POWER MOSFET

Harris Corporation
2,057 -

RFQ

RFD16N03LSM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 16A - - - - - - - - - Surface Mount
RFP10P12

RFP10P12

P-CHANNEL POWER MOSFET

Harris Corporation
300 -

RFQ

RFP10P12

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 10A (Tc) 10V 500mOhm @ 5A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP7N35

RFP7N35

N-CHANNEL POWER MOSFET

Harris Corporation
1,200 -

RFQ

RFP7N35

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 7A (Tc) 10V 750mOhm @ 3.5A, 10V 4V @ 1mA - ±20V 1600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF211

IRFF211

N-CHANNEL POWER MOSFET

Harris Corporation
1,043 -

RFQ

IRFF211

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 2.2A (Tc) 10V 1.5Ohm @ 1.25A, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF221

IRFF221

N-CHANNEL POWER MOSFET

Harris Corporation
650 -

RFQ

IRFF221

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Tc) 10V 800mOhm @ 2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S540

RF1S540

28A, 100V, 0.077 OHM, N-CHANNEL

Harris Corporation
4,101 -

RFQ

RF1S540

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76139S3

HUF76139S3

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

HUF76139S3

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±16V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFG40N10LE

RFG40N10LE

N-CHANNEL POWER MOSFET

Harris Corporation
489 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFD310

IRFD310

0.4A 400V 3.600 OHM N-CHANNEL

Harris Corporation
3,189 -

RFQ

IRFD310

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
RF1S9640

RF1S9640

MOSFET P-CH 200V 11A TO220AB

Harris Corporation
4,500 -

RFQ

RF1S9640

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) - 500mOhm @ 6A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF831

IRF831

N-CHANNEL POWER MOSFET

Harris Corporation
1,610 -

RFQ

IRF831

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP7N40

RFP7N40

N-CHANNEL POWER MOSFET

Harris Corporation
471 -

RFQ

RFP7N40

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 7A (Tc) 10V 750mOhm @ 3.5A, 10V 4V @ 1mA - ±20V 1600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP141

IRFP141

N-CHANNEL POWER MOSFET

Harris Corporation
288 -

RFQ

IRFP141

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Tc) 10V 77mOhm @ 19A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1275 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPC42

IRFPC42

3.9A, 1000V, 4.2 OHM, N-CHANNEL

Harris Corporation
5,701 -

RFQ

IRFPC42

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 600 V 5.9A (Tc) 10V 1.6Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S40N10SM

RF1S40N10SM

N-CHANNEL POWER MOSFET

Harris Corporation
3,245 -

RFQ

RF1S40N10SM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 40A - - - - - - - - - Surface Mount
IRFPC40

IRFPC40

6.8A 600V 1.200 OHM N-CHANNEL

Harris Corporation
968 -

RFQ

IRFPC40

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP341

IRFP341

N-CHANNEL POWER MOSFET

Harris Corporation
233 -

RFQ

IRFP341

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ41A

BUZ41A

N-CHANNEL POWER MOSFET

Harris Corporation
7,258 -

RFQ

BUZ41A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 1mA - ±20V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP70N03

RFP70N03

MOSFET N-CH 30V 70A TO220-3

Harris Corporation
5,567 -

RFQ

RFP70N03

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) - 10mOhm @ 70A, 10V 4V @ 250µA 260 nC @ 20 V - 3300 pF @ 25 V - - - Through Hole
IRF731

IRF731

N-CHANNEL POWER MOSFET

Harris Corporation
4,369 -

RFQ

IRF731

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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