Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQP13N06L

FQP13N06L

MOSFET N-CH 60V 13.6A TO220-3

onsemi
3,008 -

RFQ

FQP13N06L

Технические

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR010PBF

IRFR010PBF

MOSFET N-CH 50V 8.2A DPAK

Vishay Siliconix
3,296 -

RFQ

IRFR010PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC012N03

FDMC012N03

MOSFET N-CH 30V 35A/185A POWER33

onsemi
3,000 -

RFQ

FDMC012N03

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 185A (Tc) 4.5V, 10V 1.23mOhm @ 35A, 10V 2V @ 250µA 110 nC @ 10 V ±12V 8183 pF @ 15 V - 2.3W (Ta), 64W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7450DP-T1-E3

SI7450DP-T1-E3

MOSFET N-CH 200V 3.2A PPAK SO-8

Vishay Siliconix
3,455 -

RFQ

SI7450DP-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 3.2A (Ta) 6V, 10V 80mOhm @ 4A, 10V 4.5V @ 250µA 42 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDPF18N20FT

FDPF18N20FT

MOSFET N-CH 200V 18A TO220F

onsemi
3,385 -

RFQ

FDPF18N20FT

Технические

Bulk,Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUC120N04S6L008ATMA1

IAUC120N04S6L008ATMA1

MOSFET N-CH 40V 120A 8TDSON-33

Infineon Technologies
2,563 -

RFQ

IAUC120N04S6L008ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 0.8mOhm @ 60A, 10V 2V @ 90µA 140 nC @ 10 V ±16V 7910 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD068N10N3GATMA1

IPD068N10N3GATMA1

MOSFET N-CH 100V 90A TO252-3

Infineon Technologies
2,657 -

RFQ

IPD068N10N3GATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 6V, 10V 6.8mOhm @ 90A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RCJ220N25TL

RCJ220N25TL

MOSFET N-CH 250V 22A LPTS

Rohm Semiconductor
3,599 -

RFQ

RCJ220N25TL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 22A (Tc) 10V 140mOhm @ 11A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 3200 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
VN2460N3-G

VN2460N3-G

MOSFET N-CH 600V 160MA TO92-3

Microchip Technology
3,685 -

RFQ

VN2460N3-G

Технические

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 160mA (Tj) 4.5V, 10V 20Ohm @ 100mA, 10V 4V @ 2mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRF740BPBF

IRF740BPBF

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
2,023 -

RFQ

IRF740BPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB067N08N3GATMA1

IPB067N08N3GATMA1

MOSFET N-CH 80V 80A D2PAK

Infineon Technologies
3,320 -

RFQ

IPB067N08N3GATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 6.7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP180N10N3GXKSA1

IPP180N10N3GXKSA1

MOSFET N-CH 100V 43A TO220-3

Infineon Technologies
2,529 -

RFQ

IPP180N10N3GXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 6V, 10V 18mOhm @ 33A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1800 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN70R450P7SXKSA1

IPAN70R450P7SXKSA1

MOSFET N-CH 700V 10A TO220

Infineon Technologies
2,683 -

RFQ

IPAN70R450P7SXKSA1

Технические

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 10A (Tc) 10V 450mOhm @ 2.3A, 10V 3.5V @ 120µA 13.1 nC @ 10 V ±16V 424 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
VP3203N8-G

VP3203N8-G

MOSFET P-CH 30V 1.1A TO243AA

Microchip Technology
3,831 -

RFQ

VP3203N8-G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 1.1A (Tj) 4.5V, 10V 600mOhm @ 1.5A, 10V 3.5V @ 10mA - ±20V 300 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD90N10S4L06ATMA1

IPD90N10S4L06ATMA1

MOSFET N-CH 100V 90A TO252-3

Infineon Technologies
3,106 -

RFQ

IPD90N10S4L06ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 4.5V, 10V 6.6mOhm @ 90A, 10V 2.1V @ 90µA 98 nC @ 10 V ±16V 6250 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS6H824NLT1G

NVMFS6H824NLT1G

MOSFET N-CH 80V 20A/110A 5DFN

onsemi
2,034 -

RFQ

NVMFS6H824NLT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 110A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2V @ 140µA 52 nC @ 10 V ±20V 2900 pF @ 40 V - 3.8W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP50R380CEXKSA1

IPP50R380CEXKSA1

MOSFET N-CH 500V 9.9A TO220-3

Infineon Technologies
2,856 -

RFQ

IPP50R380CEXKSA1

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 9.9A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V Super Junction 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU220PBF

IRFU220PBF

MOSFET N-CH 200V 4.8A TO251AA

Vishay Siliconix
2,174 -

RFQ

IRFU220PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR310PBF

IRFR310PBF

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix
2,306 -

RFQ

IRFR310PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF7N60M2

STF7N60M2

MOSFET N-CH 600V 5A TO220FP

STMicroelectronics
3,005 -

RFQ

STF7N60M2

Технические

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 950mOhm @ 2.5A, 10V 4V @ 250µA 8.8 nC @ 10 V ±25V 271 pF @ 100 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
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20,000.000 Продукты
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1800+ производители
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15,000+ Складские запасы
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