Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2

MOSFET N-CH 80V 165A 8HSOF

Infineon Technologies
3,438 -

RFQ

IAUT165N08S5N029ATMA2

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.8V @ 108µA 90 nC @ 10 V ±20V 6370 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R125P7AUMA1

IPL60R125P7AUMA1

MOSFET N-CH 650V 27A 4VSON

Infineon Technologies
3,395 -

RFQ

IPL60R125P7AUMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 125mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 111W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF2804STRL7PP

IRF2804STRL7PP

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
2,830 -

RFQ

IRF2804STRL7PP

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL640PBF

IRL640PBF

MOSFET N-CH 200V 17A TO220AB

Vishay Siliconix
2,503 -

RFQ

IRL640PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18532KCS

CSD18532KCS

MOSFET N-CH 60V 100A TO220-3

Texas Instruments
3,479 -

RFQ

CSD18532KCS

Технические

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 4.2mOhm @ 100A, 10V 2.2V @ 250µA 53 nC @ 10 V ±20V 4680 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB11N50APBF-BE3

IRFB11N50APBF-BE3

MOSFET N-CH 500V 11A TO220AB

Vishay Siliconix
3,084 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU3607PBF

IRFU3607PBF

MOSFET N-CH 75V 56A IPAK

Infineon Technologies
5,001 -

RFQ

IRFU3607PBF

Технические

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK40E10N1,S1X

TK40E10N1,S1X

MOSFET N CH 100V 90A TO220

Toshiba Semiconductor and Storage
2,980 -

RFQ

TK40E10N1,S1X

Технические

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 126W (Tc) 150°C (TJ) Through Hole
IAUS165N08S5N029ATMA1

IAUS165N08S5N029ATMA1

MOSFET N-CH 80V 165A HSOG-8

Infineon Technologies
3,647 -

RFQ

IAUS165N08S5N029ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.8V @ 108µA 90 nC @ 10 V ±20V 6370 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPLU300N04S41R1XTMA1

IPLU300N04S41R1XTMA1

MOSFET N-CH 40V 300A 8HSOF

Infineon Technologies
3,297 -

RFQ

IPLU300N04S41R1XTMA1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 1.15mOhm @ 100A, 10V 4V @ 125µA 151 nC @ 10 V ±20V 12090 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD18542KTTT

CSD18542KTTT

MOSFET N-CH 60V 200A/170A DDPAK

Texas Instruments
3,545 -

RFQ

CSD18542KTTT

Технические

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta), 170A (Tc) 4.5V, 10V 4mOhm @ 100A, 10V 2.2V @ 250µA 57 nC @ 10 V ±20V 5070 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3806PBF

IRFS3806PBF

MOSFET N-CH 60V 43A D2PAK

Infineon Technologies
3,441 -

RFQ

IRFS3806PBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1018ESPBF

IRF1018ESPBF

MOSFET N-CH 60V 79A D2PAK

Infineon Technologies
3,894 -

RFQ

IRF1018ESPBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3607PBF

IRFR3607PBF

MOSFET N-CH 75V 56A DPAK

Infineon Technologies
3,148 -

RFQ

IRFR3607PBF

Технические

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7521D1PBF

IRF7521D1PBF

MOSFET N-CH 20V 2.4A MICRO8

Infineon Technologies
2,058 -

RFQ

IRF7521D1PBF

Технические

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.7V, 4.5V 135mOhm @ 1.7A, 4.5V 700mV @ 250µA (Min) 8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3103D1SPBF

IRL3103D1SPBF

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
2,847 -

RFQ

IRL3103D1SPBF

Технические

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V ±16V 1900 pF @ 25 V - 3.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB4233PBF

IRFB4233PBF

MOSFET N-CH 230V 56A TO220AB

Infineon Technologies
2,060 -

RFQ

IRFB4233PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 230 V 56A (Tc) 10V 37mOhm @ 28A, 10V 5V @ 250µA 170 nC @ 10 V ±30V 5510 pF @ 25 V - 370W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRL1404ZSPBF

IRL1404ZSPBF

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
3,469 -

RFQ

IRL1404ZSPBF

Технические

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3114ZPBF

IRLR3114ZPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
3,761 -

RFQ

IRLR3114ZPBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5305LPBF

IRF5305LPBF

MOSFET P-CH 55V 31A TO262

Infineon Technologies
2,624 -

RFQ

IRF5305LPBF

Технические

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
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20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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