Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STB150NF55T4

STB150NF55T4

MOSFET N-CH 55V 120A D2PAK

STMicroelectronics
3,832 -

RFQ

STB150NF55T4

Технические

Tape & Reel (TR),Cut Tape (CT) STripFET™ II Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 6mOhm @ 60A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS5C406NLT1G

NVMFS5C406NLT1G

MOSFET N-CH 40V 53A/362A 5DFN

onsemi
2,525 -

RFQ

NVMFS5C406NLT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 362A (Tc) 4.5V, 10V 0.7mOhm @ 50A, 10V 2V @ 280µA 149 nC @ 10 V ±20V 9400 pF @ 20 V - 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB30N65M2AG

STB30N65M2AG

MOSFET N-CH 650V 20A D2PAK

STMicroelectronics
3,129 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 30.8 nC @ 10 V ±25V 1440 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP42AN15A0

FDP42AN15A0

MOSFET N-CH 150V 5A/35A TO220-3

onsemi
2,072 -

RFQ

FDP42AN15A0

Технические

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Ta), 35A (Tc) 6V, 10V 42mOhm @ 12A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 2150 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB32NM50N

STB32NM50N

MOSFET N CH 500V 22A D2PAK

STMicroelectronics
2,971 -

RFQ

STB32NM50N

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 130mOhm @ 11A, 10V 4V @ 250µA 62.5 nC @ 10 V ±25V 1973 pF @ 50 V - 190W (Tc) 150°C (TJ) Surface Mount
RJ1G12BGNTLL

RJ1G12BGNTLL

MOSFET N-CH 40V 120A LPTL

Rohm Semiconductor
2,642 -

RFQ

RJ1G12BGNTLL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.86mOhm @ 50A, 10V 2.5V @ 2mA 165 nC @ 10 V ±20V 12500 pF @ 20 V - 178W (Tc) 150°C (TJ) Surface Mount
CSD19533KCS

CSD19533KCS

MOSFET N-CH 100V 100A TO220-3

Texas Instruments
2,950 -

RFQ

CSD19533KCS

Технические

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 6V, 10V 10.5mOhm @ 55A, 10V 3.4V @ 250µA 35 nC @ 10 V ±20V 2670 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB33N65M2

STB33N65M2

MOSFET N-CH 650V 24A D2PAK

STMicroelectronics
2,294 -

RFQ

STB33N65M2

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 140mOhm @ 12A, 10V 4V @ 250µA 41.5 nC @ 10 V ±25V 1790 pF @ 100 V - 190W (Tc) 150°C (TJ) Surface Mount
IRFBG30PBF

IRFBG30PBF

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix
3,546 -

RFQ

IRFBG30PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF12N65E-GE3

SIHF12N65E-GE3

MOSFET N-CH 650V 12A TO220

Vishay Siliconix
2,846 -

RFQ

SIHF12N65E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7748L1TRPBF

IRF7748L1TRPBF

MOSFET N-CH 60V 28A DIRECTFET

Infineon Technologies
3,591 -

RFQ

IRF7748L1TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 148A (Tc) 10V 2.2mOhm @ 89A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 8075 pF @ 50 V - 3.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK40A10N1,S4X

TK40A10N1,S4X

MOSFET N-CH 100V 40A TO220SIS

Toshiba Semiconductor and Storage
3,420 -

RFQ

TK40A10N1,S4X

Технические

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 35W (Tc) 150°C (TJ) Through Hole
IPA50R190CEXKSA2

IPA50R190CEXKSA2

MOSFET N-CH 500V 18.5A TO220

Infineon Technologies
2,326 -

RFQ

IPA50R190CEXKSA2

Технические

Bulk,Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 32W (Tc) -40°C ~ 150°C (TJ) Through Hole
IXTP70N075T2

IXTP70N075T2

MOSFET N-CH 75V 70A TO220AB

IXYS
3,930 -

RFQ

IXTP70N075T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 70A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2725 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA08N50D2

IXTA08N50D2

MOSFET N-CH 500V 800MA TO263

IXYS
3,371 -

RFQ

IXTA08N50D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 800mA (Tc) - 4.6Ohm @ 400mA, 0V - 12.7 nC @ 5 V ±20V 312 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF6215STRL

AUIRF6215STRL

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
3,876 -

RFQ

AUIRF6215STRL

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540NLPBF

IRF9540NLPBF

MOSFET P-CH 100V 23A TO262

Infineon Technologies
3,268 -

RFQ

IRF9540NLPBF

Технические

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1450 pF @ 25 V - 3.1W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLS3036TRLPBF

IRLS3036TRLPBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,710 -

RFQ

IRLS3036TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180P04P4L02ATMA1

IPB180P04P4L02ATMA1

MOSFET P-CH 40V 180A TO263-7

Infineon Technologies
3,747 -

RFQ

IPB180P04P4L02ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.4mOhm @ 100A, 10V 2.2V @ 410µA 286 nC @ 10 V ±16V 18700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180P04P4L02ATMA2

IPB180P04P4L02ATMA2

MOSFET P-CH 40V 180A TO263-7

Infineon Technologies
2,604 -

RFQ

IPB180P04P4L02ATMA2

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.4mOhm @ 100A, 10V 2.2V @ 410µA 286 nC @ 10 V +5V, -16V 18700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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