Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3704ZCLPBF

IRF3704ZCLPBF

MOSFET N-CH 20V 67A TO262

Infineon Technologies
3,837 -

RFQ

IRF3704ZCLPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404ZLPBF

IRL1404ZLPBF

MOSFET N-CH 40V 120A TO262

Infineon Technologies
3,315 -

RFQ

IRL1404ZLPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3805LPBF

IRF3805LPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies
3,062 -

RFQ

IRF3805LPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
64-6006PBF

64-6006PBF

MOSFET N-CH 300V 46A TO247AC

Infineon Technologies
3,366 -

RFQ

64-6006PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 46A (Tc) 10V 59mOhm @ 33A, 10V 5V @ 250µA 247 nC @ 10 V ±30V 7370 pF @ 25 V - 430W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRF9520NLPBF

IRF9520NLPBF

MOSFET P-CH 100V 6.8A TO262

Infineon Technologies
3,642 -

RFQ

IRF9520NLPBF

Технические

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7526D1PBF

IRF7526D1PBF

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies
2,111 -

RFQ

IRF7526D1PBF

Технические

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V 1V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS3207PBF

IRFS3207PBF

MOSFET N-CH 75V 170A D2PAK

Infineon Technologies
3,632 -

RFQ

IRFS3207PBF

Технические

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4310ZPBF

IRFS4310ZPBF

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
3,825 -

RFQ

IRFS4310ZPBF

Технические

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU540ZPBF

IRFU540ZPBF

MOSFET N-CH 100V 35A IPAK

Infineon Technologies
2,229 -

RFQ

IRFU540ZPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6215LPBF

IRF6215LPBF

MOSFET P-CH 150V 13A TO262

Infineon Technologies
3,670 -

RFQ

IRF6215LPBF

Технические

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUXAKF1405ZS-7P

AUXAKF1405ZS-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
3,664 -

RFQ

AUXAKF1405ZS-7P

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1018EPBF

IRFR1018EPBF

MOSFET N-CH 60V 56A DPAK

Infineon Technologies
3,310 -

RFQ

IRFR1018EPBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2907ZLPBF

IRF2907ZLPBF

MOSFET N-CH 75V 160A TO262

Infineon Technologies
3,557 -

RFQ

IRF2907ZLPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4229PBF

IRFS4229PBF

MOSFET N-CH 250V 45A D2PAK

Infineon Technologies
3,854 -

RFQ

IRFS4229PBF

Технические

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 250 V 45A (Tc) 10V 48mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRFS3607PBF

IRFS3607PBF

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies
2,598 -

RFQ

IRFS3607PBF

Технические

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZCSTRLP

IRL3715ZCSTRLP

MOSFET N-CH 20V 50A D2PAK

Infineon Technologies
3,431 -

RFQ

IRL3715ZCSTRLP

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2703STRLPBF

IRL2703STRLPBF

MOSFET N-CH 30V 24A D2PAK

Infineon Technologies
3,358 -

RFQ

IRL2703STRLPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3805L-7PPBF

IRF3805L-7PPBF

MOSFET N-CH 55V 160A D2PAK

Infineon Technologies
2,497 -

RFQ

IRF3805L-7PPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714STRLPBF

IRL3714STRLPBF

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,413 -

RFQ

IRL3714STRLPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714ZSTRLPBF

IRL3714ZSTRLPBF

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,574 -

RFQ

IRL3714ZSTRLPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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