Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB160N04S2L03ATMA1

IPB160N04S2L03ATMA1

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies
3,002 -

RFQ

IPB160N04S2L03ATMA1

Технические

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 5 V ±20V 6000 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB16CN10N G

IPB16CN10N G

MOSFET N-CH 100V 53A D2PAK

Infineon Technologies
3,932 -

RFQ

IPB16CN10N G

Технические

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 53A (Tc) 10V 16.5mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3220 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB26CN10NGATMA1

IPB26CN10NGATMA1

MOSFET N-CH 100V 35A D2PAK

Infineon Technologies
2,656 -

RFQ

IPB26CN10NGATMA1

Технические

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 26mOhm @ 35A, 10V 4V @ 39µA 31 nC @ 10 V ±20V 2070 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB26CNE8N G

IPB26CNE8N G

MOSFET N-CH 85V 35A D2PAK

Infineon Technologies
3,483 -

RFQ

IPB26CNE8N G

Технические

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 85 V 35A (Tc) 10V 26mOhm @ 35A, 10V 4V @ 39µA 31 nC @ 10 V ±20V 2070 pF @ 40 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB34CN10NGATMA1

IPB34CN10NGATMA1

MOSFET N-CH 100V 27A D2PAK

Infineon Technologies
3,447 -

RFQ

IPB34CN10NGATMA1

Технические

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 34mOhm @ 27A, 10V 4V @ 29µA 24 nC @ 10 V ±20V 1570 pF @ 50 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB50CN10NGATMA1

IPB50CN10NGATMA1

MOSFET N-CH 100V 20A TO263-3

Infineon Technologies
3,000 -

RFQ

IPB50CN10NGATMA1

Технические

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 50mOhm @ 20A, 10V 4V @ 20µA 16 nC @ 10 V ±20V 1090 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB50R250CPATMA1

IPB50R250CPATMA1

MOSFET N-CH 550V 13A TO263-3

Infineon Technologies
2,786 -

RFQ

IPB50R250CPATMA1

Технические

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 13A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 520µA 36 nC @ 10 V ±20V 1420 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB50R299CPATMA1

IPB50R299CPATMA1

MOSFET N-CH 550V 12A TO263-3

Infineon Technologies
3,588 -

RFQ

IPB50R299CPATMA1

Технические

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB60R250CPATMA1

IPB60R250CPATMA1

MOSFET N-CH 650V 12A TO263-3

Infineon Technologies
62,000 -

RFQ

IPB60R250CPATMA1

Технические

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 440µA 35 nC @ 10 V ±20V 1200 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB77N06S212ATMA1

IPB77N06S212ATMA1

MOSFET N-CH 55V 77A TO263-3

Infineon Technologies
3,583 -

RFQ

IPB77N06S212ATMA1

Технические

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 11.7mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB79CN10N G

IPB79CN10N G

MOSFET N-CH 100V 13A D2PAK

Infineon Technologies
3,153 -

RFQ

IPB79CN10N G

Технические

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 79mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N04S204ATMA1

IPB80N04S204ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
3,013 -

RFQ

IPB80N04S204ATMA1

Технические

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.4mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N04S2H4ATMA1

IPB80N04S2H4ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
3,607 -

RFQ

IPB80N04S2H4ATMA1

Технические

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N04S2L03ATMA1

IPB80N04S2L03ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
18,000 -

RFQ

IPB80N04S2L03ATMA1

Технические

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 80A, 10V 2V @ 250µA 213 nC @ 10 V ±20V 6000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFB82N60P

IXFB82N60P

MOSFET N-CH 600V 82A PLUS264

IXYS
2,486 -

RFQ

IXFB82N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 82A (Tc) 10V 75mOhm @ 41A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 23000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN44N80P

IXFN44N80P

MOSFET N-CH 800V 39A SOT-227B

IXYS
2,715 -

RFQ

IXFN44N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 39A (Tc) 10V 190mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFK32N100Q3

IXFK32N100Q3

MOSFET N-CH 1000V 32A TO264AA

IXYS
2,116 -

RFQ

IXFK32N100Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX240N25X3

IXFX240N25X3

MOSFET N-CH 250V 240A PLUS247-3

IXYS
690 -

RFQ

IXFX240N25X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 240A (Tc) 10V 5mOhm @ 120A, 10V 4.5V @ 8mA 345 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX300N20X3

IXFX300N20X3

MOSFET N-CH 200V 300A PLUS247-3

IXYS
2,436 -

RFQ

IXFX300N20X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 300A (Tc) 10V 4mOhm @ 150A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX210N30X3

IXFX210N30X3

MOSFET N-CH 300V 210A PLUS247-3

IXYS
3,831 -

RFQ

IXFX210N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 210A (Tc) 10V 5.5mOhm @ 105A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 24200 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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