Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT17F120J

APT17F120J

MOSFET N-CH 1200V 18A ISOTOP

Microchip Technology
3,849 -

RFQ

APT17F120J

Технические

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) 10V 580mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5010JVRU2

APT5010JVRU2

MOSFET N-CH 500V 44A SOT227

Microchip Technology
3,749 -

RFQ

APT5010JVRU2

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 100mOhm @ 22A, 10V 4V @ 2.5mA 312 nC @ 10 V ±30V 7410 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFK52N100X

IXFK52N100X

MOSFET N-CH 1000V 52A TO264

IXYS
3,199 -

RFQ

IXFK52N100X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 52A (Tc) 10V 125mOhm @ 26A, 10V 6V @ 4mA 245 nC @ 10 V ±30V 6725 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR80N50Q3

IXFR80N50Q3

MOSFET N-CH 500V 50A ISOPLUS247

IXYS
2,749 -

RFQ

IXFR80N50Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 72mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN220N20X3

IXFN220N20X3

MOSFET N-CH 200V 160A SOT227B

IXYS
2,145 -

RFQ

IXFN220N20X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 160A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFH150N30X3

IXFH150N30X3

MOSFET N-CH 300V 150A TO247

IXYS
3,131 -

RFQ

IXFH150N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 8.3mOhm @ 75A, 10V 4.5V @ 4mA 177 nC @ 10 V ±20V 13100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX60N50L2

IXTX60N50L2

MOSFET N-CH 500V 60A PLUS247-3

IXYS
1,350 -

RFQ

IXTX60N50L2

Технические

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 4.5V @ 250µA 610 nC @ 10 V ±30V 24000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTW90N65G2V

SCTW90N65G2V

SICFET N-CH 650V 90A HIP247

STMicroelectronics
2,481 -

RFQ

SCTW90N65G2V

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 90A (Tc) 18V 25mOhm @ 50A, 18V 5V @ 250µA 157 nC @ 18 V +22V, -10V 3300 pF @ 400 V - 390W (Tc) -55°C ~ 200°C (TJ) Through Hole
APT77N60JC3

APT77N60JC3

MOSFET N-CH 600V 77A ISOTOP

Microchip Technology
3,447 -

RFQ

APT77N60JC3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 35mOhm @ 60A, 10V 3.9V @ 5.4mA 640 nC @ 10 V ±20V 13600 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
SCTWA50N120

SCTWA50N120

SICFET N-CH 1200V 65A HIP247

STMicroelectronics
3,971 -

RFQ

SCTWA50N120

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 20V 69mOhm @ 40A, 20V 3V @ 1mA 122 nC @ 20 V +25V, -10V 1900 pF @ 400 V - 318W (Tc) -55°C ~ 200°C (TJ) Through Hole
STY139N65M5

STY139N65M5

MOSFET N-CH 650V 130A MAX247

STMicroelectronics
2,410 -

RFQ

STY139N65M5

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 130A (Tc) 10V 17mOhm @ 65A, 10V 5V @ 250µA 363 nC @ 10 V ±25V 15600 pF @ 100 V - 625W (Tc) 150°C (TJ) Through Hole
IXFN230N20T

IXFN230N20T

MOSFET N-CH 200V 220A SOT227B

IXYS
3,798 -

RFQ

IXFN230N20T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 1090W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
SCTW100N65G2AG

SCTW100N65G2AG

SICFET N-CH 650V 100A HIP247

STMicroelectronics
2,139 -

RFQ

SCTW100N65G2AG

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 26mOhm @ 50A, 18V 5V @ 5mA 162 nC @ 18 V +22V, -10V 3315 pF @ 520 V - 420W (Tc) -55°C ~ 200°C (TJ) Through Hole
IXFB90N85X

IXFB90N85X

MOSFET N-CH 850V 90A PLUS264

IXYS
3,463 -

RFQ

IXFB90N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 90A (Tc) 10V 41mOhm @ 500mA, 10V 5.5V @ 8mA 340 nC @ 10 V ±30V 13300 pF @ 25 V - 1785W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT240N15X4HV

IXTT240N15X4HV

MOSFET N-CH 150V 240A TO268HV

IXYS
2,897 -

RFQ

IXTT240N15X4HV

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 4.4mOhm @ 120A, 10V 4.5V @ 250µA 195 nC @ 10 V ±20V 8900 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTH4L020N120SC1

NTH4L020N120SC1

SICFET N-CH 1200V 102A TO247

onsemi
2,095 -

RFQ

NTH4L020N120SC1

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 102A (Tc) 20V 28mOhm @ 60A, 20V 4.3V @ 20mA 220 nC @ 20 V +25V, -15V 2943 pF @ 800 V - 510W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFB62N80Q3

IXFB62N80Q3

MOSFET N-CH 800V 62A PLUS264

IXYS
3,787 -

RFQ

IXFB62N80Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 62A (Tc) 10V 140mOhm @ 31A, 10V 6.5V @ 8mA 270 nC @ 10 V ±30V 13600 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0040120J1

C3M0040120J1

1200V 40 M SIC MOSFET

Wolfspeed, Inc.
901 -

RFQ

C3M0040120J1

Технические

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.2mA 94 nC @ 15 V +15V, -4V 2900 pF @ 1000 V - 272W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IXTN550N055T2

IXTN550N055T2

MOSFET N-CH 55V 550A SOT227B

IXYS
2,647 -

RFQ

IXTN550N055T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
MSC025SMA120S

MSC025SMA120S

SICFET N-CH 1.2KV 100A D3PAK

Microchip Technology
428 -

RFQ

MSC025SMA120S

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) Surface Mount
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