Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI070N06N G

IPI070N06N G

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies
2,932 -

RFQ

IPI070N06N G

Технические

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 180µA 118 nC @ 10 V ±20V 4100 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI070N08N3 G

IPI070N08N3 G

MOSFET N-CH 80V 80A TO262-3

Infineon Technologies
3,904 -

RFQ

IPI070N08N3 G

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI072N10N3GXKSA1

IPI072N10N3GXKSA1

MOSFET N-CH 100V 80A TO262-3

Infineon Technologies
500 -

RFQ

IPI072N10N3GXKSA1

Технические

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7.2mOhm @ 80A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI8823EDB-T2-E1

SI8823EDB-T2-E1

MOSFET P-CH 20V 2.7A 4MICRO FOOT

Vishay Siliconix
3,008 -

RFQ

SI8823EDB-T2-E1

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Tc) 1.5V, 4.5V 95mOhm @ 1A, 4.5V 800mV @ 250µA 10 nC @ 4.5 V ±8V 580 pF @ 10 V - 900mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMV65XPER

PMV65XPER

MOSFET P-CH 20V 2.8A TO236AB

Nexperia USA Inc.
3,489 -

RFQ

PMV65XPER

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 2.5V, 4.5V 78mOhm @ 2.8A, 4.5V 1.25V @ 250µA 9 nC @ 4.5 V ±12V 618 pF @ 10 V - 480mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMCM4401VPEZ

PMCM4401VPEZ

MOSFET P-CH 12V 3.9A 4WLCSP

Nexperia USA Inc.
7,627 -

RFQ

PMCM4401VPEZ

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.8V, 4.5V 65mOhm @ 3A, 4.5V 900mV @ 250µA 10 nC @ 4.5 V ±8V 415 pF @ 6 V - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMN2075UDW-7

DMN2075UDW-7

MOSFET N-CH 20V 2.8A SOT363

Diodes Incorporated
2,421 -

RFQ

DMN2075UDW-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 1.5V, 4.5V 48mOhm @ 3A, 4.5V 1V @ 250µA 7 nC @ 4.5 V ±8V 594.3 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8821EDB-T2-E1

SI8821EDB-T2-E1

MOSFET P-CH 30V 4MICROFOOT

Vishay Siliconix
3,640 -

RFQ

SI8821EDB-T2-E1

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 2.5V, 4.5V 135mOhm @ 1A, 4.5V 1.3V @ 250µA 17 nC @ 10 V ±12V 440 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSM6K403TU,LF

SSM6K403TU,LF

MOSFET N-CH 20V 4.2A UF6

Toshiba Semiconductor and Storage
2,938 -

RFQ

SSM6K403TU,LF

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.5V, 4V 28mOhm @ 3A, 4V 1V @ 1mA 16.8 nC @ 4 V ±10V 1050 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
PMPB100ENEX

PMPB100ENEX

MOSFET DFN2020MD-6

Nexperia USA Inc.
3,767 -

RFQ

PMPB100ENEX

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 72mOhm @ 3.9A, 10V 2.5V @ 250µA 5 nC @ 10 V ±20V 157 pF @ 15 V - 3.3W (Ta) -55°C ~ 175°C (TJ) Surface Mount
SI3473DDV-T1-GE3

SI3473DDV-T1-GE3

MOSFET P-CHANNEL 12V 8A 6TSOP

Vishay Siliconix
2,024 -

RFQ

SI3473DDV-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 17.8mOhm @ 8.7A, 4.5V 1V @ 250µA 57 nC @ 8 V ±8V 1975 pF @ 6 V - 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMN3051LDM-7

DMN3051LDM-7

MOSFET N-CH 30V 4A SOT26

Diodes Incorporated
2,818 -

RFQ

DMN3051LDM-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 38mOhm @ 6A, 10V 2.2V @ 250µA 8.6 nC @ 10 V ±20V 424 pF @ 5 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSM6J212FE,LF

SSM6J212FE,LF

MOSFET P-CH 20V 4A ES6

Toshiba Semiconductor and Storage
2,020 -

RFQ

SSM6J212FE,LF

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 40.7mOhm @ 3A, 4.5V 1V @ 1mA 14.1 nC @ 4.5 V ±8V 970 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SI8806DB-T2-E1

SI8806DB-T2-E1

MOSFET N-CH 12V 4MICROFOOT

Vishay Siliconix
3,642 -

RFQ

SI8806DB-T2-E1

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 2.8A (Ta) 1.8V, 4.5V 43mOhm @ 1A, 4.5V 1V @ 250µA 17 nC @ 8 V ±8V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8489EDB-T2-E1

SI8489EDB-T2-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix
2,153 -

RFQ

SI8489EDB-T2-E1

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.06A (Ta) 2.5V, 10V 44mOhm @ 1.5A, 10V 1.2V @ 250µA 27 nC @ 10 V ±12V 765 pF @ 10 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RF4E080GNTR

RF4E080GNTR

MOSFET N-CH 30V 8A HUML2020L8

Rohm Semiconductor
2,850 -

RFQ

RF4E080GNTR

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 4.5V, 10V 17.6mOhm @ 8A, 10V 2.5V @ 250µA 5.8 nC @ 10 V ±20V 295 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
DMT3006LDK-7

DMT3006LDK-7

MOSFET N-CH 30V 17.1A/46.2A 8DFN

Diodes Incorporated
3,838 -

RFQ

DMT3006LDK-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 17.1A (Ta), 46.2A (Tc) 4.5V, 10V 6.5mOhm @ 12A, 10V 3V @ 250µA 22.6 nC @ 10 V ±20V 1320 pF @ 15 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRA88DP-T1-GE3

SIRA88DP-T1-GE3

MOSFET N-CH 30V 45.5A PPAK SO-8

Vishay Siliconix
2,732 -

RFQ

SIRA88DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 45.5A (Tc) 4.5V, 10V 6.7mOhm @ 10A, 10V 2.4V @ 250µA 12.5 nC @ 4.5 V +20V, -16V 985 pF @ 15 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA84BDP-T1-GE3

SIRA84BDP-T1-GE3

MOSFET N-CH 30V 22A/70A PPAK SO8

Vishay Siliconix
2,145 -

RFQ

SIRA84BDP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 70A (Tc) 4.5V, 10V 4.6mOhm @ 15A, 10V 2.4V @ 250µA 32 nC @ 10 V +20V, -16V 1050 pF @ 15 V - 3.7W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB422EDK-T1-GE3

SIB422EDK-T1-GE3

MOSFET N-CH 20V 9A PPAK SC75-6

Vishay Siliconix
2,531 -

RFQ

SIB422EDK-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 9A (Tc) 1.5V, 4.5V 30mOhm @ 5A, 4.5V 1V @ 250µA 18 nC @ 8 V ±8V - - 2.5W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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