Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTN8N150L

IXTN8N150L

MOSFET N-CH 1500V 7.5A SOT-227B

IXYS
3,199 -

RFQ

IXTN8N150L

Технические

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1500 V 7.5A (Tc) 20V 3.6Ohm @ 4A, 20V 8V @ 250µA 250 nC @ 15 V ±30V 8000 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFB150N65X2

IXFB150N65X2

MOSFET N-CH 650V 150A PLUS264

IXYS
2,844 -

RFQ

IXFB150N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 150A (Tc) 10V 17mOhm @ 75A, 10V 5.5V @ 8mA 430 nC @ 10 V ±30V 20400 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN44N100Q3

IXFN44N100Q3

MOSFET N-CH 1000V 38A SOT227B

IXYS
2,622 -

RFQ

IXFN44N100Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) 10V 220mOhm @ 22A, 10V 6.5V @ 8mA 264 nC @ 10 V ±30V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN110N85X

IXFN110N85X

MOSFET N-CH 850V 110A SOT227B

IXYS
2,579 -

RFQ

IXFN110N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 110A (Tc) 10V 33mOhm @ 55A, 10V 5.5V @ 8mA 425 nC @ 10 V ±30V 17000 pF @ 25 V - 1170W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN70N100X

IXFN70N100X

MOSFET N-CH 1000V 56A SOT227B

IXYS
3,027 -

RFQ

IXFN70N100X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 56A (Tc) 10V 89mOhm @ 35A, 10V 6V @ 8mA 350 nC @ 10 V ±30V 9150 pF @ 25 V - 1200W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IPD160N04LGBTMA1

IPD160N04LGBTMA1

MOSFET N-CH 40V 30A TO252-3

Infineon Technologies
2,813 -

RFQ

IPD160N04LGBTMA1

Технические

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 2V @ 10µA 15 nC @ 10 V ±20V 1200 pF @ 20 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD16CN10N G

IPD16CN10N G

MOSFET N-CH 100V 53A TO252-3

Infineon Technologies
2,621 -

RFQ

IPD16CN10N G

Технические

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 53A (Tc) 10V 16mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3220 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD16CNE8N G

IPD16CNE8N G

MOSFET N-CH 85V 53A TO252-3

Infineon Technologies
2,664 -

RFQ

IPD16CNE8N G

Технические

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 53A (Tc) 10V 16mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3230 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD170N04NGBTMA1

IPD170N04NGBTMA1

MOSFET N-CH 40V 30A TO252-3

Infineon Technologies
3,456 -

RFQ

IPD170N04NGBTMA1

Технические

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 10V 17mOhm @ 30A, 10V 4V @ 10µA 11 nC @ 10 V ±20V 880 pF @ 20 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFN120N65X2

IXFN120N65X2

MOSFET N-CH 650V 108A SOT227B

IXYS
3,401 -

RFQ

IXFN120N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 108A (Tc) 10V 24mOhm @ 54A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IPD25CNE8N G

IPD25CNE8N G

MOSFET N-CH 85V 35A TO252-3

Infineon Technologies
3,290 -

RFQ

IPD25CNE8N G

Технические

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 35A (Tc) 10V 25mOhm @ 35A, 10V 4V @ 39µA 31 nC @ 10 V ±20V 2070 pF @ 40 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTN30N100L

IXTN30N100L

MOSFET N-CH 1000V 30A SOT227B

IXYS
3,921 -

RFQ

IXTN30N100L

Технические

Bulk Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 20V 450mOhm @ 15A, 20V 5.5V @ 250µA 545 nC @ 20 V ±30V 13700 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC040SMA120J

MSC040SMA120J

SICFET N-CH 1200V 53A SOT227

Microchip Technology
3,500 -

RFQ

MSC040SMA120J

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 53A (Tc) 20V 50mOhm @ 40A, 20V 2.8V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 208W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFN50N120SK

IXFN50N120SK

SICFET N-CH 1200V 48A SOT227B

IXYS
3,403 -

RFQ

IXFN50N120SK

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 48A (Tc) 20V 52mOhm @ 40A, 20V 2.8V @ 10mA 115 nC @ 20 V +20V, -5V 1895 pF @ 1000 V - - -40°C ~ 175°C (TJ) Chassis Mount
BSM300C12P3E301

BSM300C12P3E301

SICFET N-CH 1200V 300A MODULE

Rohm Semiconductor
3,253 -

RFQ

BSM300C12P3E301

Технические

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 300A (Tc) - - 5.6V @ 80mA - +22V, -4V 1500 pF @ 10 V Standard 1360W (Tc) -40°C ~ 150°C (TJ) -
NX3008NBKMB,315

NX3008NBKMB,315

MOSFET N-CH 30V 530MA DFN1006B-3

Nexperia USA Inc.
2,054 -

RFQ

NX3008NBKMB,315

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 530mA (Ta) 1.8V, 4.5V 1.4Ohm @ 350mA, 4.5V 1.1V @ 250µA 0.68 nC @ 4.5 V ±8V 50 pF @ 15 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN40ENEX

PMN40ENEX

MOSFET N-CH 30V 5.7A 6TSOP

Nexperia USA Inc.
2,513 -

RFQ

PMN40ENEX

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.7A (Ta) 4.5V, 10V 38mOhm @ 4.5A, 10V 2V @ 250µA 11 nC @ 10 V ±20V 294 pF @ 15 V - 530mW (Ta), 4.46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN30UNEX

PMN30UNEX

MOSFET N-CH 20V 4.8A 6TSOP

Nexperia USA Inc.
2,404 -

RFQ

PMN30UNEX

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.8A (Ta) 1.5V, 4.5V 36mOhm @ 4.8A, 4.5V 900mV @ 250µA 9 nC @ 4.5 V ±8V 558 pF @ 10 V - 530mW (Ta), 4.46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CEDM7002AE TR PBFREE

CEDM7002AE TR PBFREE

MOSFET N-CH 60V 300MA SOT883L

Central Semiconductor Corp
2,481 -

RFQ

CEDM7002AE TR PBFREE

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 2.5V, 10V 1.4Ohm @ 500mA, 10V 2V @ 250µA 0.5 nC @ 4.5 V 20V 50 pF @ 25 V - 100mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
SSM6J213FE(TE85L,F

SSM6J213FE(TE85L,F

MOSFET P CH 20V 2.6A ES6

Toshiba Semiconductor and Storage
3,192 -

RFQ

SSM6J213FE(TE85L,F

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
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