Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP140N6F7

STP140N6F7

MOSFET N-CH 60V 80A TO220

STMicroelectronics
3,527 -

RFQ

STP140N6F7

Технические

Tube STripFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 3.5mOhm @ 40A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 10 V - 158W (Tc) 175°C (TJ) Through Hole
STL140N4LLF5

STL140N4LLF5

MOSFET N-CH 40V 140A POWERFLAT

STMicroelectronics
3,209 -

RFQ

STL140N4LLF5

Технические

Tape & Reel (TR),Cut Tape (CT) STripFET™ V Active N-Channel MOSFET (Metal Oxide) 40 V 140A (Tc) 4.5V, 10V 2.75mOhm @ 16A, 10V 1V @ 250µA 45 nC @ 4.5 V ±22V 5900 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA6N80E-GE3

SIHA6N80E-GE3

MOSFET N-CH 800V 5.4A TO220

Vishay Siliconix
3,465 -

RFQ

SIHA6N80E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA12N60E-E3

SIHA12N60E-E3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix
3,696 -

RFQ

SIHA12N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS8350L

FDMS8350L

MOSFET N-CH 40V 47A/200A POWER56

onsemi
2,085 -

RFQ

FDMS8350L

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 47A (Ta), 200A (Tc) 4.5V, 10V 0.85mOhm @ 47A, 10V 3V @ 250µA 242 nC @ 10 V ±20V 17500 pF @ 20 V - 2.7W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB17N25S3100ATMA1

IPB17N25S3100ATMA1

MOSFET N-CH 250V 17A TO263-3

Infineon Technologies
3,338 -

RFQ

IPB17N25S3100ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 17A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 54µA 19 nC @ 10 V ±20V 1500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHD240N60E-GE3

SIHD240N60E-GE3

MOSFET N-CH 600V 12A DPAK

Vishay Siliconix
2,435 -

RFQ

SIHD240N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7868ADP-T1-E3

SI7868ADP-T1-E3

MOSFET N-CH 20V 40A PPAK SO-8

Vishay Siliconix
2,161 -

RFQ

SI7868ADP-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 40A (Tc) 4.5V, 10V 2.25mOhm @ 20A, 10V 1.6V @ 250µA 150 nC @ 10 V ±16V 6110 pF @ 10 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP7N80K5

STP7N80K5

MOSFET N-CH 800V 6A TO220

STMicroelectronics
3,501 -

RFQ

STP7N80K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 5V @ 100µA 13.4 nC @ 10 V ±30V 360 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBG30PBF-BE3

IRFBG30PBF-BE3

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix
3,019 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP40NF10

STP40NF10

MOSFET N-CH 100V 50A TO220AB

STMicroelectronics
2,594 -

RFQ

STP40NF10

Технические

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 28mOhm @ 25A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 2180 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB180N06S4H1ATMA2

IPB180N06S4H1ATMA2

MOSFET N-CH 60V 180A TO263-7

Infineon Technologies
3,912 -

RFQ

IPB180N06S4H1ATMA2

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 10V 1.7mOhm @ 100A, 10V 4V @ 200µA 270 nC @ 10 V ±20V 21900 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N06S4H1ATMA2

IPB120N06S4H1ATMA2

MOSFET N-CH 60V 120A TO263-3

Infineon Technologies
3,779 -

RFQ

IPB120N06S4H1ATMA2

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 200µA 270 nC @ 10 V ±20V 21900 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STH10N80K5-2AG

STH10N80K5-2AG

MOSFET N-CH 800V 8A H2PAK-2

STMicroelectronics
3,159 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 680mOhm @ 4A, 10V 5V @ 100µA 17.3 nC @ 10 V ±30V 426 pF @ 100 V - 121W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STH240N10F7-2

STH240N10F7-2

MOSFET N-CH 100V 180A H2PAK-2

STMicroelectronics
2,457 -

RFQ

STH240N10F7-2

Технические

Tape & Reel (TR),Cut Tape (CT) STripFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 2.5mOhm @ 60A, 10V 4.5V @ 250µA 160 nC @ 10 V ±20V 11550 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPH4R008NH,L1Q

TPH4R008NH,L1Q

MOSFET N-CH 80V 60A 8SOP

Toshiba Semiconductor and Storage
2,807 -

RFQ

TPH4R008NH,L1Q

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 10V 4mOhm @ 30A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 5300 pF @ 40 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
STB11NM60T4

STB11NM60T4

MOSFET N-CH 650V 11A D2PAK

STMicroelectronics
3,592 -

RFQ

STB11NM60T4

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 450mOhm @ 5.5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1000 pF @ 25 V - 160W (Tc) -65°C ~ 150°C (TJ) Surface Mount
STB14NK50ZT4

STB14NK50ZT4

MOSFET N-CH 500V 14A D2PAK

STMicroelectronics
2,663 -

RFQ

STB14NK50ZT4

Технические

Tape & Reel (TR),Cut Tape (CT) SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 380mOhm @ 6A, 10V 4.5V @ 100µA 92 nC @ 10 V ±30V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB86363-F085

FDB86363-F085

MOSFET N-CH 80V 110A D2PAK

onsemi
2,897 -

RFQ

FDB86363-F085

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 10V 2.4mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 10000 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI9Z24GPBF

IRFI9Z24GPBF

MOSFET P-CH 60V 8.5A TO220-3

Vishay Siliconix
2,493 -

RFQ

IRFI9Z24GPBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 8.5A (Tc) 10V 280mOhm @ 5.1A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
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