| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXTP4N80PMOSFET N-CH 800V 3.6A TO220AB IXYS |
3,776 | - |
RFQ |
Технические |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.6A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 5.5V @ 100µA | 14.2 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SUP90220E-GE3MOSFET N-CH 200V 64A TO220AB Vishay Siliconix |
3,400 | - |
RFQ |
Технические |
Tube | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 64A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 48 nC @ 10 V | ±20V | 1950 pF @ 100 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SIHH14N60EF-T1-GE3MOSFET N-CH 600V 15A PPAK 8 X 8 Vishay Siliconix |
3,672 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 266mOhm @ 7A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 1449 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHP12N60E-E3MOSFET N-CH 600V 12A TO220AB Vishay Siliconix |
2,162 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHP12N60E-GE3MOSFET N-CH 600V 12A TO220AB Vishay Siliconix |
3,794 | - |
RFQ |
Технические |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STF13NK50ZMOSFET N-CH 500V 11A TO220FP STMicroelectronics |
910 | - |
RFQ |
Технические |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4.5V @ 100µA | 47 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BSC021N08NS5ATMA1MOSFET TRENCH 80V TSON-8 Infineon Technologies |
2,484 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 2.1mOhm @ 50A, 10V | 3.8V @ 146µA | 29 nC @ 10 V | ±20V | 8600 pF @ 40 V | Standard | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
STP90N55F4MOSFET N-CH 55V 90A TO220AB STMicroelectronics |
3,001 | - |
RFQ |
Технические |
Tube | DeepGATE™, STripFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 90A (Tc) | 10V | 8mOhm @ 45A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
STL9N3LLH5MOSFET N-CH 30V 9A POWERFLAT STMicroelectronics |
2,970 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | STripFET™ V | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 19mOhm @ 4.5A, 10V | 2.5V @ 250µA | 5 nC @ 4.5 V | ±22V | 724 pF @ 25 V | - | 2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
STL150N3LLH6MOSFET N-CH 30V 150A POWERFLAT STMicroelectronics |
3,844 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | DeepGATE™, STripFET™ VI | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 2.4mOhm @ 16.5A, 10V | 1V @ 250µA | 40 nC @ 4.5 V | ±20V | 4040 pF @ 25 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SSM3J114TU(T5L,T)MOSFET P-CH 20V 1.8A UFM Toshiba Semiconductor and Storage |
2,313 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7 nC @ 4 V | ±8V | 331 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM3J120TU,LFMOSFET P-CH 20V 4A UFM Toshiba Semiconductor and Storage |
2,030 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIV | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4V | 38mOhm @ 3A, 4V | 1V @ 1mA | 22.3 nC @ 4 V | ±8V | 1484 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM3J129TU(TE85L)MOSFET P-CH 20V 4.6A UFM Toshiba Semiconductor and Storage |
3,211 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSV | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.6A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1 nC @ 4.5 V | ±8V | 640 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM3J307T(TE85L,F)MOSFET P-CH 20V 5A TSM Toshiba Semiconductor and Storage |
3,964 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSV | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 1.5V, 4.5V | 31mOhm @ 4A, 4.5V | 1V @ 1mA | 19 nC @ 4.5 V | ±8V | 1170 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM3J321T(TE85L,F)MOSFET P-CH 20V 5.2A TSM Toshiba Semiconductor and Storage |
2,189 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSV | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.2A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1 nC @ 4.5 V | ±8V | 640 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM3K315T(TE85L,F)MOSFET N-CH 30V 6A TSM Toshiba Semiconductor and Storage |
3,054 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIV | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 4.5V, 10V | 27.6mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1 nC @ 10 V | ±20V | 450 pF @ 15 V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM3K316T(TE85L,F)MOSFET N-CH 30V 4A TSM Toshiba Semiconductor and Storage |
2,701 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 10V | 53mOhm @ 3A, 10V | 1V @ 1mA | 4.3 nC @ 4 V | ±12V | 270 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM3K7002BSU,LFMOSFET N-CH 60V 200MA USM Toshiba Semiconductor and Storage |
2,345 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | ±20V | 17 pF @ 25 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM4K27CTTPL3MOSFET N-CH 20V 500MA CST4 Toshiba Semiconductor and Storage |
3,619 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 500mA (Ta) | 1.8V, 4V | 205mOhm @ 250mA, 4V | 1.1V @ 1mA | - | ±12V | 174 pF @ 10 V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM5H12TU(TE85L,F)MOSFET N-CH 30V 1.9A UFV Toshiba Semiconductor and Storage |
3,063 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9 nC @ 4 V | ±12V | 123 pF @ 15 V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C (TJ) | Surface Mount |