Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTP4N80P

IXTP4N80P

MOSFET N-CH 800V 3.6A TO220AB

IXYS
3,776 -

RFQ

IXTP4N80P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 3.4Ohm @ 500mA, 10V 5.5V @ 100µA 14.2 nC @ 10 V ±30V 750 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90220E-GE3

SUP90220E-GE3

MOSFET N-CH 200V 64A TO220AB

Vishay Siliconix
3,400 -

RFQ

SUP90220E-GE3

Технические

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 64A (Tc) 7.5V, 10V - 4V @ 250µA 48 nC @ 10 V ±20V 1950 pF @ 100 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH14N60EF-T1-GE3

SIHH14N60EF-T1-GE3

MOSFET N-CH 600V 15A PPAK 8 X 8

Vishay Siliconix
3,672 -

RFQ

SIHH14N60EF-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 266mOhm @ 7A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 1449 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP12N60E-E3

SIHP12N60E-E3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix
2,162 -

RFQ

SIHP12N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP12N60E-GE3

SIHP12N60E-GE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix
3,794 -

RFQ

SIHP12N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF13NK50Z

STF13NK50Z

MOSFET N-CH 500V 11A TO220FP

STMicroelectronics
910 -

RFQ

STF13NK50Z

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 480mOhm @ 6.5A, 10V 4.5V @ 100µA 47 nC @ 10 V ±30V 1600 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC021N08NS5ATMA1

BSC021N08NS5ATMA1

MOSFET TRENCH 80V TSON-8

Infineon Technologies
2,484 -

RFQ

Tape & Reel (TR),Cut Tape (CT) OptiMOS™, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.1mOhm @ 50A, 10V 3.8V @ 146µA 29 nC @ 10 V ±20V 8600 pF @ 40 V Standard 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP90N55F4

STP90N55F4

MOSFET N-CH 55V 90A TO220AB

STMicroelectronics
3,001 -

RFQ

STP90N55F4

Технические

Tube DeepGATE™, STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 8mOhm @ 45A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 4800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
STL9N3LLH5

STL9N3LLH5

MOSFET N-CH 30V 9A POWERFLAT

STMicroelectronics
2,970 -

RFQ

STL9N3LLH5

Технические

Tape & Reel (TR),Cut Tape (CT) STripFET™ V Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 19mOhm @ 4.5A, 10V 2.5V @ 250µA 5 nC @ 4.5 V ±22V 724 pF @ 25 V - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL150N3LLH6

STL150N3LLH6

MOSFET N-CH 30V 150A POWERFLAT

STMicroelectronics
3,844 -

RFQ

STL150N3LLH6

Технические

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VI Obsolete N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 2.4mOhm @ 16.5A, 10V 1V @ 250µA 40 nC @ 4.5 V ±20V 4040 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSM3J114TU(T5L,T)

SSM3J114TU(T5L,T)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage
2,313 -

RFQ

SSM3J114TU(T5L,T)

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.5V, 4V 149mOhm @ 600mA, 4V 1V @ 1mA 7.7 nC @ 4 V ±8V 331 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J120TU,LF

SSM3J120TU,LF

MOSFET P-CH 20V 4A UFM

Toshiba Semiconductor and Storage
2,030 -

RFQ

SSM3J120TU,LF

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4V 38mOhm @ 3A, 4V 1V @ 1mA 22.3 nC @ 4 V ±8V 1484 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J129TU(TE85L)

SSM3J129TU(TE85L)

MOSFET P-CH 20V 4.6A UFM

Toshiba Semiconductor and Storage
3,211 -

RFQ

SSM3J129TU(TE85L)

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 1.5V, 4.5V 46mOhm @ 3A, 4.5V 1V @ 1mA 8.1 nC @ 4.5 V ±8V 640 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J307T(TE85L,F)

SSM3J307T(TE85L,F)

MOSFET P-CH 20V 5A TSM

Toshiba Semiconductor and Storage
3,964 -

RFQ

SSM3J307T(TE85L,F)

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.5V, 4.5V 31mOhm @ 4A, 4.5V 1V @ 1mA 19 nC @ 4.5 V ±8V 1170 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3J321T(TE85L,F)

SSM3J321T(TE85L,F)

MOSFET P-CH 20V 5.2A TSM

Toshiba Semiconductor and Storage
2,189 -

RFQ

SSM3J321T(TE85L,F)

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.2A (Ta) 1.5V, 4.5V 46mOhm @ 3A, 4.5V 1V @ 1mA 8.1 nC @ 4.5 V ±8V 640 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K315T(TE85L,F)

SSM3K315T(TE85L,F)

MOSFET N-CH 30V 6A TSM

Toshiba Semiconductor and Storage
3,054 -

RFQ

SSM3K315T(TE85L,F)

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 27.6mOhm @ 4A, 10V 2.5V @ 1mA 10.1 nC @ 10 V ±20V 450 pF @ 15 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K316T(TE85L,F)

SSM3K316T(TE85L,F)

MOSFET N-CH 30V 4A TSM

Toshiba Semiconductor and Storage
2,701 -

RFQ

SSM3K316T(TE85L,F)

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 1.8V, 10V 53mOhm @ 3A, 10V 1V @ 1mA 4.3 nC @ 4 V ±12V 270 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K7002BSU,LF

SSM3K7002BSU,LF

MOSFET N-CH 60V 200MA USM

Toshiba Semiconductor and Storage
2,345 -

RFQ

SSM3K7002BSU,LF

Технические

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - ±20V 17 pF @ 25 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM4K27CTTPL3

SSM4K27CTTPL3

MOSFET N-CH 20V 500MA CST4

Toshiba Semiconductor and Storage
3,619 -

RFQ

SSM4K27CTTPL3

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Obsolete N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.8V, 4V 205mOhm @ 250mA, 4V 1.1V @ 1mA - ±12V 174 pF @ 10 V - 400mW (Ta) 150°C (TJ) Surface Mount
SSM5H12TU(TE85L,F)

SSM5H12TU(TE85L,F)

MOSFET N-CH 30V 1.9A UFV

Toshiba Semiconductor and Storage
3,063 -

RFQ

SSM5H12TU(TE85L,F)

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 1.8V, 4V 133mOhm @ 1A, 4V 1V @ 1mA 1.9 nC @ 4 V ±12V 123 pF @ 15 V Schottky Diode (Isolated) 500mW (Ta) 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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