Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHG11N80AE-GE3

SIHG11N80AE-GE3

MOSFET N-CH 800V 8A TO247AC

Vishay Siliconix
2,640 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C612NWFT1G

NVMFS5C612NWFT1G

MOSFET N-CH 60V 34A/225A 5DFN

onsemi
3,655 -

RFQ

NVMFS5C612NWFT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 34A (Ta), 225A (Tc) 10V 1.65mOhm @ 50A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 4900 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBC40STRLPBF

IRFBC40STRLPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
2,355 -

RFQ

IRFBC40STRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI820GPBF

IRFI820GPBF

MOSFET N-CH 500V 2.1A TO220-3

Vishay Siliconix
2,808 -

RFQ

IRFI820GPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840ALPBF

IRF840ALPBF

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix
2,977 -

RFQ

IRF840ALPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI630GPBF

IRLI630GPBF

MOSFET N-CH 200V 6.2A TO220-3

Vishay Siliconix
2,460 -

RFQ

IRLI630GPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 6.2A (Tc) 4V, 5V 400mOhm @ 3.7A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP023N04NGXKSA1

IPP023N04NGXKSA1

MOSFET N-CH 40V 90A TO220-3

Infineon Technologies
3,371 -

RFQ

IPP023N04NGXKSA1

Технические

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.3mOhm @ 90A, 10V 4V @ 95µA 120 nC @ 10 V ±20V 10000 pF @ 20 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA057N06N3GXKSA1

IPA057N06N3GXKSA1

MOSFET N-CH 60V 60A TO220-3-31

Infineon Technologies
3,472 -

RFQ

IPA057N06N3GXKSA1

Технические

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 5.7mOhm @ 60A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHF12N60E-E3

SIHF12N60E-E3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix
3,250 -

RFQ

SIHF12N60E-E3

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP7NK80Z

STP7NK80Z

MOSFET N-CH 800V 5.2A TO220AB

STMicroelectronics
3,833 -

RFQ

STP7NK80Z

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 5.2A (Tc) 10V 1.8Ohm @ 2.6A, 10V 4.5V @ 100µA 56 nC @ 10 V ±30V 1138 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
MCP60P06-BP

MCP60P06-BP

P-CHANNEL MOSFET, TO-220AB(H) PA

Micro Commercial Co
3,416 -

RFQ

MCP60P06-BP

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 5814 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDBL0330N80

FDBL0330N80

MOSFET N-CH 80V 220A 8HPSOF

onsemi
3,579 -

RFQ

FDBL0330N80

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 220A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6320 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMJS1D0N04CTWG

NTMJS1D0N04CTWG

MOSFET N-CH 40V 46A/300A 8LFPAK

onsemi
3,646 -

RFQ

NTMJS1D0N04CTWG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 190µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3

MOSFET N-CH 600V 19A PPAK 8 X 8

Vishay Siliconix
3,496 -

RFQ

SIHH180N60E-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STU5N95K3

STU5N95K3

MOSFET N-CH 950V 4A IPAK

STMicroelectronics
2,540 -

RFQ

STU5N95K3

Технические

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 3.5Ohm @ 2A, 10V 5V @ 100µA 19 nC @ 10 V ±30V 460 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF9N80K5

STF9N80K5

MOSFET N-CH 800V 7A TO220FP

STMicroelectronics
2,213 -

RFQ

STF9N80K5

Технические

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 900mOhm @ 3.5A, 10V 5V @ 100µA 12 nC @ 10 V ±30V 340 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC2218A

EPC2218A

TRANS GAN 100V .0032OHM AECQ101

EPC
3,446 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
IPD60R600C6BTMA1

IPD60R600C6BTMA1

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies
3,867 -

RFQ

IPD60R600C6BTMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP7N80C

FQP7N80C

MOSFET N-CH 800V 6.6A TO220-3

onsemi
2,591 -

RFQ

FQP7N80C

Технические

Bulk,Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.9Ohm @ 3.3A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1680 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL3306PBF

IRFSL3306PBF

MOSFET N-CH 60V 120A TO262

Infineon Technologies
2,615 -

RFQ

IRFSL3306PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
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20,000.000 Продукты
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1800+ производители
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15,000+ Складские запасы
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