Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQJ456EP-T1_GE3

SQJ456EP-T1_GE3

MOSFET N-CH 100V 32A PPAK SO-8

Vishay Siliconix
2,464 -

RFQ

SQJ456EP-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 6V, 10V 26mOhm @ 9.3A, 10V 3.5V @ 250µA 63 nC @ 10 V ±20V 3342 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN7R8-100PSEQ

PSMN7R8-100PSEQ

MOSFET N-CH 100V 100A TO220AB

Nexperia USA Inc.
3,358 -

RFQ

PSMN7R8-100PSEQ

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 7.8mOhm @ 25A, 10V 4V @ 1mA 128 nC @ 10 V ±20V 7110 pF @ 50 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHA240N60E-GE3

SIHA240N60E-GE3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix
3,400 -

RFQ

SIHA240N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA07N60C3XKSA1

SPA07N60C3XKSA1

MOSFET N-CH 650V 7.3A TO220-FP

Infineon Technologies
2,924 -

RFQ

SPA07N60C3XKSA1

Технические

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 250µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFU24N60M2

STFU24N60M2

MOSFET N-CH 600V 18A TO220FP

STMicroelectronics
2,422 -

RFQ

STFU24N60M2

Технические

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN8R5-100PSQ

PSMN8R5-100PSQ

MOSFET N-CH 100V 100A TO220AB

Nexperia USA Inc.
3,335 -

RFQ

PSMN8R5-100PSQ

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF15S65L

AOTF15S65L

MOSFET N-CH 650V 15A TO220-3F

Alpha & Omega Semiconductor Inc.
3,413 -

RFQ

AOTF15S65L

Технические

Tube aMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 4V @ 250µA 17.2 nC @ 10 V ±30V 841 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFSC0D9N04C

NVMFSC0D9N04C

MOSFET N-CH 40V 48.9A/313A 8DFN

onsemi
3,056 -

RFQ

NVMFSC0D9N04C

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 48.9A (Ta), 313A (Tc) 10V 0.87mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 4.1W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF8N65M5

STF8N65M5

MOSFET N-CH 650V 7A TO220FP

STMicroelectronics
3,620 -

RFQ

STF8N65M5

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 15 nC @ 10 V ±25V 690 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
IPP65R310CFDXKSA1

IPP65R310CFDXKSA1

MOSFET N-CH 650V 11.4A TO220-3

Infineon Technologies
3,044 -

RFQ

IPP65R310CFDXKSA1

Технические

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP100N10F7

STP100N10F7

MOSFET N CH 100V 80A TO-220

STMicroelectronics
2,052 -

RFQ

STP100N10F7

Технические

Tube DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4.5V @ 250µA 61 nC @ 10 V ±20V 4369 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
STFU16N65M2

STFU16N65M2

MOSFET N-CH 650V 11A TO220FP

STMicroelectronics
3,127 -

RFQ

STFU16N65M2

Технические

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 19.5 nC @ 10 V ±25V 718 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA15N60E-E3

SIHA15N60E-E3

MOSFET N-CH 600V 15A TO220

Vishay Siliconix
2,544 -

RFQ

SIHA15N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 76 nC @ 10 V ±30V 1350 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP70040E-GE3

SUP70040E-GE3

MOSFET N-CH 100V 120A TO220AB

Vishay Siliconix
3,478 -

RFQ

SUP70040E-GE3

Технические

Bulk TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 7.5V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5100 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH14N65EF-T1-GE3

SIHH14N65EF-T1-GE3

MOSFET N-CH 650V 15A PPAK 8 X 8

Vishay Siliconix
2,010 -

RFQ

SIHH14N65EF-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 271mOhm @ 7A, 10V 4V @ 250µA 98 nC @ 10 V ±30V 1749 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP60R360CFD7XKSA1

IPP60R360CFD7XKSA1

MOSFET 600V TO220-3-1

Infineon Technologies
3,617 -

RFQ

IPP60R360CFD7XKSA1

Технические

Bulk,Tube CoolMOS™ CFD7 Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Through Hole
IXFP4N85XM

IXFP4N85XM

MOSFET N-CH 850V 3.5A TO220

IXYS
2,911 -

RFQ

IXFP4N85XM

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740ALPBF

IRF740ALPBF

MOSFET N-CH 400V 10A I2PAK

Vishay Siliconix
2,056 -

RFQ

IRF740ALPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF15N60E-E3

SIHF15N60E-E3

MOSFET N-CH 600V 15A TO220

Vishay Siliconix
3,426 -

RFQ

SIHF15N60E-E3

Технические

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA8N65X2

IXTA8N65X2

MOSFET N-CH 650V 8A TO263

IXYS
2,964 -

RFQ

IXTA8N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 500mOhm @ 4A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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