Infineon Technologies IMW65R057M1HXKSA1

Номер детали
IMW65R057M1HXKSA1
Производитель
Infineon Technologies
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
PG-TO247-3-41
Технические
Нахождение ЧипаIMW65R057M1HXKSA1.pdf
Описание
SILICON CARBIDE MOSFET, PG-TO247
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order IMW65R057M1HXKSA1 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that IMW65R057M1HXKSA1 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the IMW65R057M1HXKSA1. All suppliers must pass our qualification reviews before they can publish their products including IMW65R057M1HXKSA1 on Нахождение Чипа; we pay more attention to the channels and quality of IMW65R057M1HXKSA1 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the IMW65R057M1HXKSA1 price and inventory displayed accurate?

The price and inventory of IMW65R057M1HXKSA1 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of IMW65R057M1HXKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IMW65R057M1HXKSA1 we delivered, we will accept the replacement or return of the IMW65R057M1HXKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IMW65R057M1HXKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IMW65R057M1HXKSA1 pin diagram, IMW65R057M1HXKSA1 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение IMW65R057M1HXKSA1 IMZA65R057M1HXKSA1 IMBF170R1K0M1XTMA1 IMW120R030M1HXKSA1 IMZ120R030M1HXKSA1
Номер детали IMW65R057M1HXKSA1 IMZA65R057M1HXKSA1 IMBF170R1K0M1XTMA1 IMW120R030M1HXKSA1 IMZ120R030M1HXKSA1
Производитель Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Packaging Tube Tube Tube Tube Tube
Series CoolSiC™ CoolSiC™ CoolSiC™ CoolSiC™ CoolSiC™
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 650 V 650 V 650 V 650 V 650 V
Current-ContinuousDrain(Id)@25°C 35A (Tc) 35A (Tc) 35A (Tc) 35A (Tc) 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V 18V 18V 18V 18V
RdsOn(Max)@IdVgs 74mOhm @ 16.7A, 18V 74mOhm @ 16.7A, 18V 74mOhm @ 16.7A, 18V 74mOhm @ 16.7A, 18V 74mOhm @ 16.7A, 18V
Vgs(th)(Max)@Id 5.7V @ 5mA 5.7V @ 5mA 5.7V @ 5mA 5.7V @ 5mA 5.7V @ 5mA
GateCharge(Qg)(Max)@Vgs 28 nC @ 18 V 28 nC @ 18 V 28 nC @ 18 V 28 nC @ 18 V 28 nC @ 18 V
Vgs(Max) +20V, -2V +20V, -2V +20V, -2V +20V, -2V +20V, -2V
InputCapacitance(Ciss)(Max)@Vds 930 pF @ 400 V 930 pF @ 400 V 930 pF @ 400 V 930 pF @ 400 V 930 pF @ 400 V
FETFeature - - - - -
PowerDissipation(Max) 133W (Tc) 133W (Tc) 133W (Tc) 133W (Tc) 133W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

IMW65R057M1HXKSA1 Актуальная информация

Включенные следующие детали "IMW65R057M1HXKSA1" ISSI, Интегрированные Силиконовые Решения Инк IMW65R057M1HXKSA1.

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