IXYS IXTT3N200P3HV

Номер детали
IXTT3N200P3HV
Производитель
IXYS
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-268HV (IXTT)
Технические
Нахождение ЧипаIXTT3N200P3HV.pdf
Описание
MOSFET N-CH 2000V 3A TO268
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order IXTT3N200P3HV on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that IXTT3N200P3HV is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the IXTT3N200P3HV. All suppliers must pass our qualification reviews before they can publish their products including IXTT3N200P3HV on Нахождение Чипа; we pay more attention to the channels and quality of IXTT3N200P3HV products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the IXTT3N200P3HV price and inventory displayed accurate?

The price and inventory of IXTT3N200P3HV fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of IXTT3N200P3HV?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IXTT3N200P3HV we delivered, we will accept the replacement or return of the IXTT3N200P3HV only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IXTT3N200P3HV.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as IXTT3N200P3HV pin diagram, IXTT3N200P3HV datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение IXTT2N300P3HV IXTH1N300P3HV IXTT3N200P3HV IXTA1N200P3HV IXTH1N200P3
Номер детали IXTT2N300P3HV IXTH1N300P3HV IXTT3N200P3HV IXTA1N200P3HV IXTH1N200P3
Производитель IXYS IXYS IXYS IXYS IXYS
Packaging Tube Tube Tube Tube Tube
Series Polar P3™ Polar P3™ Polar P3™ Polar P3™ Polar P3™
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 2000 V 2000 V 2000 V 2000 V 2000 V
Current-ContinuousDrain(Id)@25°C 3A (Tc) 3A (Tc) 3A (Tc) 3A (Tc) 3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 8Ohm @ 1.5A, 10V 8Ohm @ 1.5A, 10V 8Ohm @ 1.5A, 10V 8Ohm @ 1.5A, 10V 8Ohm @ 1.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 70 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 1860 pF @ 25 V 1860 pF @ 25 V 1860 pF @ 25 V 1860 pF @ 25 V 1860 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 520W (Tc) 520W (Tc) 520W (Tc) 520W (Tc) 520W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

IXTT3N200P3HV Актуальная информация

Включенные следующие детали "IXTT3N200P3HV" ISSI, Интегрированные Силиконовые Решения Инк IXTT3N200P3HV.

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